• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.143.1-143.1
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• 2016

Ge is a promising candidate to replace Si in MOSFET because of its superior carrier mobility, particular that of the hole. However Ge oxide is thermodynamically unstable. At elevated temperature, GeO is formed at the interface of Ge and GeO2, and its formation increases the interface defect density, degrading its device performance. In search for a method to surmount the problem, we investigated Ge oxidation through an inert capped oxide layer. For this work, we prepared low doped n-type Ge(100) wafer by removing native oxide and depositing a capping layer, and show that GeO2 interface can be successfully grown through the capping layer by thermal oxidation in a furnace. The thickness and quality of thus grown GeO2 interface was examined by ellipsometry, XPS, and AFM, along with I-V and C-V measurements performed at 100K to 300K. We will present the result of our investigation, and provide the discussion on the oxide growth rate, interface state density and electrical characteristics in comparison with other studies using the direct oxidation method.

• Wind and Structures
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• 제23권5호
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• pp.449-464
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• 2016

Catastrophe models appraise the natural risk of the built-infrastructure simulating the interaction of its exposure and vulnerability with a hazard. Because of unique configurations and reduced number, mid/high-rise buildings present singular challenges to the assessment of their damage vulnerability. This paper presents a novel approach to estimate the vulnerability of mid/high-rise buildings (MHB) which is used in the Florida Public Hurricane Loss Model, a catastrophe model developed for the state of Florida. The MHB vulnerability approach considers the wind pressure hazard exerted over the building's height as well as accompanying rain. The approach assesses separately the damages caused by wind, debris impact, and water intrusion on building models discretized into typical apartment units. Hurricane-induced water intrusion is predicted combining the estimates of impinging rain with breach and pre-existing building defect size estimates. Damage is aggregated apartment-by-apartment and story-by-story, and accounts for vertical water propagation. The approach enables the vulnerability modeling of regular and complex building geometries in the Florida exposure and elsewhere.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.78-82
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• 1998

The oxygen nonstoichiometry (x) of UO$_{2+x}$ and $(Ce_yU_{1-y})O_{2+x}$ (y=0.05, 0.25) has been measured as a function of oxygen activity (a02) at 100$0^{\circ}C$ by a solid state coulometri titration technique. The results for UO$_{2+x}$ are in a good agreement with literature data and the ao2-dependence of the nonstoichimetry has been well explained with (2:2:2) cluster model. The equilibrium oxygen activity of $(Ce_yU_{1-y})O_{2+x}$ increases with Ce-content (y) for given nonstoichiometry (x), which is ascribed to the fact that Ce is present as Ce$^{3+}\; and\; Ce^{4+}$, and, therefore, the addition of Ce reduces the oxidation capacity of UO$_{2+x}$. From the oxygen activity dependence of x in $(Ce_yU_{1-y})O_{2+x}$ the defect structure of $(Ce_yU_{1-y})O_{2+x}$ is discussed.

• 대한전자공학회논문지SD
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• 제39권12호
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• pp.1022-1032
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• 2002

테스트와 동시에 오류 비트의 수와 위치를 파악하도록 하여 redundancy 프로그래밍이 용이한 다수 비트 출력 DRAM을 위한 BIST 구조가 소개되었다. 일반적으로, DRAM 셀이 n개의 블록으로 구성된 경우에, 단지 n개의 비교기와 한 개의 3가지 상태 엔코더를 사용하여, 무오류 상태, 한 개의 오류가 있을 경우, 오류상태 및 오류비트가 존재하는 블록의 위치, 두개의 블록에 오류가 있을 경우 오류 상태 등 총 n ＋ 2개의 상태를 나타낼 수 있다. 제안된 방법을 통하여, 두개 이상의 블록에 오류가 있을 경우, 오류 비트의 위치와 수를 파악하는 방법으로 용이하게 확장 구현가능하다. 8블록으로 구성된 64MEG DRAM 경우의 성능 비교 결과 단지 0.115%의 칩 면적 증가로, 테스트 및 redundancy 프로그래밍 시간이 1/750로 감소하였다.

• 대한화학회지
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• 제40권10호
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• pp.656-662
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• 1996

저온상압법에 의해 Si/Al의 비가 100정도되는 ZSM-5를 합성하였으며 시간 경과에 따른 결정화과정을 $^{27}Al$ 및 $^{29}Si$ MAS NMR spectea 및 FT-IR로 고찰하였다. 저온상압 하에서 합성한 결과 초기 반응물질 및 성분비에 따라 화학적 이동은 기종의 연구와는 다른 경향을 보였으나 반응이 진행됨에 따라 최종 생성물의 화학적 이동은 전형적이 ZSM-5 영역에서 나타나고 있음을 확인하였다. 그리고 국부결함은 소성에 의해 제거되었으며 최종생성물의 XRD 및 SEM의 결과에서도 합성된 물질이 ZSM-5임을 확인하였다.

• Progress in Superconductivity
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• 제3권1호
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• pp.5-12
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• 2001

Our experimental research focuses on manipulating pinning deflects to alter the phase diagram of vortex matter, creating new vortex phases. Vortex matter offers a unique opportunity for creating and studying these novel phase transitions through precise control of thermal, pinning and elastic energies. The vortex melting transition in untwinned YB $a_2$C $u_3$ $O_{7-}$ $\delta$/ crystals is investigated in the presence of disorder induced by particle irradiation. We focus on the low disorder regime, where a glassy state and a lattice state can be realized in the same phase diagram. We follow the evolution of the first order vortex melting transition line into a continuous transition line as disorder is increased by irradiation. The transformation is marked by an upward shift in the lower critical point on the melting line. With columnar deflects induced by heavy ion irradiation, we find a second order Bose glass transition line separating the vortex liquid from a Bose glass below the lower critical point. Furthermore, we find an upper threshold of columnar defect concentration beyond which the lower critical point and the first order melting line disappear together. With point deflect clusters induced by proton irradiation, we find evidence for a continuous thermodynamic transition below the lower critical point..

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.135-140
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• 2016

In this study, we developed the solution-processed PMMA-$HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-$HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-$HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-$HfO_x$ hybrid ReRAM and $HfO_x$-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-$HfO_x$ films showed an excellent flexibility without defect generation.

• Nuclear Engineering and Technology
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• 제49권1호
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• pp.209-215
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• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

• 한국정보통신학회논문지
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• 제6권1호
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• pp.30-35
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• 2002

동적 라우팅은 최적경로를 선택하고 라우팅테이블을 업데이트 하기 위해 라우팅 프로토콜을 사용한다. 가장 널리 사용되는 라우팅 프로토콜은 거리벡터 알고리즘을 이용한 라우팅인포메이션 프로토콜(RIP)이다. RIP는 최적경로서 최저 흡수의 경로를 취한다. 하지만 이 RIP는 매우 심각한 단점을 가지고 있다. 그것은 15 흡수 이상의 목적지에 대한 네트워크의 라우팅테이블을 유지할 수 없다는 것이다. 이를 극복하기 위해 TCP/IP에서 개발된 링크상태 프로토콜인 OSPF가 사용된다. OSPF는 큰 네트워크에 적합하고 RIP가 갖은 단점들을 극복 했다. 본 논문은 동일한 네트워크에서 메세지 전달과 지연, 링크 사용율, 메세지 전달갯수 같은 두 프로토콜사이의 트래픽과 링크효율을 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.340-340
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• 2010

Various structures of vacancy defects in graphene layers and carbon nanotubes have been reported by high resolution transmission electron microscope (HR-TEM) and those arouse an interest of reconstruction processes of vacancy defects. In this talk, we present reconstruction processes of vacancy defects in a graphene and a carbon nanotube by tight-binding molecular dynamics (TBMD) simulations and by first principles total energy calculations. We found that a structure of a dislocation defect with two pentagon-heptagon (5-7) pairs in graphene becomes more stable than other structures when the number of vacancy units is ten and over. The simulation study of scanning tunneling microscopy reveals that the pentagon-heptagon pair defects perturb the wavefunction of electrons near Fermi level to produce the $\sqrt{3}\;{\times}\;\sqrt{3}$ superlattice pattern, which is in excellent agreement with experiment. It is also observed in our tight-binding molecular dynamics simulation that 5-7 pair defects play a very important role in vacancy reconstruction in a graphene layer and carbon nanotubes.