Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.02a
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- Pages.340-340
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- 2010
Reconstruction of Vacancy Defects in Graphene and Carbon Nanotube
- Lee, Gun-Do (Department of Materials Science and Engineering, Seoul National University) ;
- Yoon, Eui-Joon (Department of Materials Science and Engineering, Seoul National University) ;
- Hwang, Nong-Moon (Department of Materials Science and Engineering, Seoul National University) ;
- Wang, Cai-Zhuang (Department of Physics, Iowa State University) ;
- Ho, Kai-Ming (Department of Physics, Iowa State University)
- Published : 2010.02.17
Abstract
Various structures of vacancy defects in graphene layers and carbon nanotubes have been reported by high resolution transmission electron microscope (HR-TEM) and those arouse an interest of reconstruction processes of vacancy defects. In this talk, we present reconstruction processes of vacancy defects in a graphene and a carbon nanotube by tight-binding molecular dynamics (TBMD) simulations and by first principles total energy calculations. We found that a structure of a dislocation defect with two pentagon-heptagon (5-7) pairs in graphene becomes more stable than other structures when the number of vacancy units is ten and over. The simulation study of scanning tunneling microscopy reveals that the pentagon-heptagon pair defects perturb the wavefunction of electrons near Fermi level to produce the
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