• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.705-709
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• 2005

In order to clarify the heat annealing process for Magnesium Oxide (MgO), cathodoluminescent (CL) analysis was performed. Our results in the present work prove that the heat annealing has effects on not only removing water from the surface of MgO, but also increasing density of O and Mg defect pairs. It is the first work that the influence of annealing process on physical properties of the vacuum evaporated MgO thin films by using CL spectra.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1016-1018
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• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.25-28
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• 2001

Recently, STI(Shallow Trench Isolation) process has attracted attention for high density of semiconductor device as a essential isolation technology. Without applying the conventional complex reverse moat process, CMP(Chemical Mechanical Polishing) has established the Process simplification. However, STI-CMP process have various defects such as nitride residue, torn oxide defect, damage of silicon active region, etc. To solve this problem, in this paper, we discussed to determine the control limit of process, which can entirely remove oxide on nitride from the moat area of high density as reducing the damage of moat area and minimizing dishing effect in the large field area. We, also, evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1744-1749
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• 2006

Line-scan SLS of thin Si films permits the attainment of low-defect-density Si films with a directionally solidified microstructure. This paper deals with: (1) identifying and examining the structural defects that are found in the resultant material, (2) how the spatial variations in the type and density of the observed defects may potentially affect the overall uniformity of the resulting devices, and (3) some technical options that may be applied in order to potentially alleviate the situation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.6 s.249
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• pp.722-727
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• 2006

Bone fracture healing is one of the important topics in biomechanics, demanding computation simulations due to the difficulty of obtaining experimental or clinical results. In this study, we adopt the design space optimization method which was established by the authors as a tool for the simulation of bone growth using its evolutionary characteristics. As the mechanical stimulus, strain energy density is used. We assume that bone tissues over a threshold strain energy density will be differentiated and bone tissues below another threshold will be resorbed. Under compression and torsion as loadings, the filling process of the defect is well illustrated following the given mechanical criterion. It is shown that the design space optimization is an excellent tool for simulating the evolutionary process of bone growth, which has not been possible otherwise.

• Journal of the Korean institute of surface engineering
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• v.35 no.5
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• pp.289-294
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• 2002

ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $\mu\textrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$\mu\textrm{m}$~1.8$\mu\textrm{m}$. In the thicker range than 1.8$\mu\textrm{m}$ was measured hardly defects.

• Journal of the Korea Furniture Society
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• v.13 no.1
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• pp.19-25
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• 2002

Modern furniture is mostly made of panel products such as a glue-up panel, a particle board and a medium density fiberboard(MDF). Warping is a major defect of these panel products resulting in degrading final products. In this study the factors related to the warping of a glue-up panel and MDF were investigated by comparing the physical properties of warped specimens with those of the unwarped. The differences between the moisture contents measured on the both surfaces of specimens were found to mainly influence the warping of glue-up panel specimens whether conditioned or not. The average oven-dry density of warped glue-up panel specimens was definitely higher than that of the unwarped at l% significance level. For MDF the influencing factor on warping has not been revealed yet, however it was found that the conditioning reduced the number of warped specimens.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.163-168
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• 1997

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.280-283
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• 2005

The moving photocarrier grating (MPG) technique for the determination of the carrier mobilities and the recombination lifetime of $\alpha$-Se:As films has been studied. The electron and hole drift mobility and the recombination lifetime of $\alpha$-Se films with arsenic (As) additions have been obtained from measurement of the short circuit current density $j_{sc}$ as a function of grating velocity and spatial period. The hole mobility decreases due to defect density of hole traps when x exceeds 0.003, whereas the hole mobility increases for the case of low As addition (x$\le$0.003). We have found an increase in hole drift mobility and recombination lifetime, especially when As with (x = 0.003) is added into the $\alpha$-Se film.