Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Crystallinity and Internal Defect Observation of the ZnTe Thin Film Used by Opto-Electronic Sensor Material

광소자로 사용되는 ZnTe박박의 결정성에 따른 결함 관찰

  • Kim, B.J. (Institute for Advanced Materials Processing, Tohoku University)
  • Published : 2002.10.01
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Abstract

ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $\mu\textrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$\mu\textrm{m}$~1.8$\mu\textrm{m}$. In the thicker range than 1.8$\mu\textrm{m}$ was measured hardly defects.

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