The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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Epitaxial Growth of $\beta$-SiC Thin Films on Si(100) Substrate without a Carburized Buffer Layer

  • Wook Bahng (School of Materials Science & Engineering, Seoul National University) ;
  • Kim, Hyeong-Joon (School of Materials Science & Engineering, Seoul National University)
  • Published : 1997.09.01
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Abstract

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

Keywords

References

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