• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.183-183
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• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.

• Journal of Integrative Natural Science
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• v.13 no.3
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• pp.87-91
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• 2020

Molybdenum carbide (MoC_x) thin films (TFs) were deposited by reactive radio frequency (rf) magnetron co-sputtering in high vacuum chamber. We compared the properties of MoC_x thin films as the rf power changed on C target. The result of alpha step measurement showed that the thickness of the MoC_x TFs varied from163.3 to 194.86 nm as C power was increased from 160 to 200 W. The crystallinity of MoC_x such as b-Mo₂C, Mo₂C, and diamond like carbon (DLC) structures were observed by XRD. The oxidation states of Mo and C were determined using high resolution XPS spectra of Mo 3d and C 1s were deconvoluted. Molybdenum was consisted of Mo, Mo⁴⁺, and Mo⁶⁺ species. And C was deconvoluted to C-Mo, C, C-O, and C=O species.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.185-189
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• 2005

We reported here nano-scale electrical phase-change recording in amorphous $Ge_2Sb_2Te_5$ media using an atomic force microscope (AFM) having conducting probes. In recording process, a pulse voltage is applied to the conductive probe that touches the media surface to change locally the electrical resistivity of a film. However, in contact operation, tip/media wear and contamination could major obstacles, which degraded SNR, reproducibility, and lifetime. In order to overcome tip/media wear and contamination in contact mode operation, we adopted the W incorporated diamond-like carbon (W-DLC) films as a protective layer. Optimized mutilayer media were prepared by a hybrid deposition system of PECVD and RF magnetron sputtering. When suitable electrical pulses were applied to media through the conducting probe, it was observed that data bits as small as 25 nm in diameter have been written and read with good reproducibility, which corresponds to a data density of $1 Tbit/inch^2$. We concluded that stable electrical phase-change recording was possible mainly due to W-DLC layer, which played a role not only capping layer but also resistive layer.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.4
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• pp.79-87
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• 2011

In this paper, the best conditions for the deposition of the high quality diamond thin-film from N-hexane as a carbon source in the microwave plasma process was carried out. Major parameters are the deposition time, flow rates of oxygen and hexane. The deposition time for the steady state thin-film was required more than 4[h], and the suitable flow rates of hexane and oxygen for the high-quality thin-film are 0.4[sccm] and 0.1~0.2[sccm], respectively. In addition, amorphous carbons such as DLC and graphite were grown by increasing the flow rate of hexane, and it decreased by increasing the flow rate of oxygen. Specifically, the growth rate is about 1.5[${\mu}mh-1$] under no addition of oxygen and it decreased about 60[%] as ca. 1.0[${\mu}mh-1$] with oxygen.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.35-42
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• 2001

Nanotribological characteristics between a Si$_3$N$_4$ AFM tip and hydrophobic thin films were experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various ranges of normal load. Plasma-modified thin polymeric films were deposited on Si-wafer (100). Results showed that wetting angle of plasma-modified thin polymeric film increased with the treating time, which resulted in the hydrophobic surface and the decrease of adhesion and friction. Nanotribological characteristics of these surfaces were compared with those of other hydrophobic surfaces, such as DLC, OTS and IBAD-Ag coated surfaces. Those of OTS coated surface was superior to those of others, though wetting angle of plasma-modified thin polymeric film is higher.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.173-176
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• 1997

Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

• Transactions on Electrical and Electronic Materials
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• v.7 no.6
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• pp.297-300
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• 2006

The response surface modeling of the pretilt angle control using ion-beam (IB) alignment on nitrogen doped diamond-like carbon (NDLC) thin film layer is investigated. This modeling is used to analyze the variation of the pretilt angle under various process conditions. IB exposure angle and IB exposure time are considered as input factors. The analysis of variance technique is settled to analyze the statistical significance, and effect plots are also investigated to examine the relationships between the process parameters and the response. The model can allow us to reliably predict the pretilt angle with respect to the varying process conditions.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.512-518
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• 1996

Amorphous carbon nitride (a-C:N) multilayerfilms are formed by using altermating conditions during film deposition in are ion plating process. Because hard a-C:N films prepared with suitable megative bias voltages have large compressive stress, it is difficult to increase film thickness more than 200nm. Preparing multilayer films composed of hard layers and soft layers, we can grow thick multilayer films on Si and SKH steel substrate. The total thickness of multilayer films is more than 1$\mu\textrm{m}$. The multilayer films are several times thicker than the single layer films and almost equal in hardness and internal stress to the single layer ones. X-ray photoelectron spectroscopy(XPS) and Raman spectroscopy reveal that multilayer films equal to single layer films in structure, which is similar to the structure of DLC films.

• Tribology and Lubricants
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• v.16 no.3
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• pp.188-193
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• 2000

An experimental study was performed to discover the effect of environment on the tribological behavior of Si-incorporated diamond-like carbon(Si-DLC) film slid on a steel ball. The films were deposited on Si(100) wafers by a radio-frequency glow discharge of mixtures of benzene and dilute silane gases. Experiments using a ball-on-disk test-rig was performed in vacuum, dry air and ambient air conditions. It was observed that coefficient of friction decreased as the environment changed from vacuum, to dry air. Chemical analyses of debris suggested that low and stable friction is closely related to the formation of silicon-rich oxide debris and the rolling action.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.284-284
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• 2013

중 에너지 이온 산란 분석법(Medium Energy Ion Scattering Spectrometer, MEIS)은 50~500 keV로 이온을 가속 후 시료에 입사시켜 시료의 원자와 핵간 충돌로 산란되는 일차이온의 에너지를 측정하여 시료를 분석하는 기법으로, 원자층의 깊이 분해능으로 초박막의 표면 계면의 조성과 구조를 분석 할수 있는 유용한 미세 분석기술이다. 본 실험에서 에너지 70~100 keV의 He+ 이온을 사용하여 Pulse Width 1 ns의 Pulsed ion beam을 만들어 Start 신호로 사용하고 Delay-line-detector에 검출된 신호를 End 신호를 이용한 TOF-MEIS System을 개발하였다. 활용 가능한 분석시편으로 Ultra thin film 시편으로 1, 1.5, 2, 2.5, 3, 4 nm의 HfO2, 1.8, 4nm의 SiO2 시편을 분석 하였으며 Ultra Shallow Junction 시편으로 As Doped Si, Cs Doped Si 시편 및 Composition, Core/shell 구조의 Q-dot 시편으로 CdSe, CdSe/ZnS등 다양한 분석 실험을 진행 하였다. Composition, Core/shell 구조의 Q-dot 시편은 Diamond Like Carbon(DLC)의 Substrate에 Mono-layer로 형성하여 분석하였다.