• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.911-917
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• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1277-1282
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• 2004

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with 8${\times}$10$^{-3}$ $\Omega$-cm of resistivity and 80 % of transmittance at optimal conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.464-466
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• 2000

AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N$_2$/Ar ratio was investigated by alpha-step and X-ray diffraction. As a result, the AIN film deposited at the pressure ratio of the nitrogen of 30% revealed strong X-ray diffraction intensity under substrate temperature 25$^{\circ}C$ and applied current 0.4A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.176-179
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• 2003

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with $8{\times}10^{-3}\;{\Omega}-cm$ of resistivity and 80% of transmittance at optimal conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.133-133
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• 1999

비정질 탄소막 제조에 있어서 수소가 포함된 반응성 가스를 사용할 경우 제작된 탄소막 내부에는 수소가 포함되게 되며, 이러한 수소원자들은 막의 특성에 중요한 영향을 주는 것으로 알려져 있다. 따라서, 본 연구에서는 비정질 탄소막(a-C:H) 내부에 존재하는 수소가 탄소막의 특성에 미치는 영향을 알아보고, 막 내부에 포함된 수소의 함량과 공정조건 사이의 함수계를 조사함으로써 수소의 함량을 인위적으로 통제할 수 있는 가능성을 제시하고자 한다. 수소가 포함된 비정질 탄소막은 2.45 GHz의 전자기파를 사용하는 electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) 방법과 DC magnetron sputtering 법을 사용하여 제작하였다. 기판으로는 Si(001) wafer를 사용하였으며, 아세톤과 에탄올을 사용하여 표면의 유기성분을 제거하고, 진공챔버속에서 Ar 플라즈마를 발생시켜 sputter etching 방법으로 표면을 세척하였다. ECR-PECVD 방법에서는 반응가스로 메탄(CH4)과 수소(H2)의 혼합가스를 사용하였으며, 혼합가스의 비는 5~50% 범위내에서 변화를 주었다. 수소가스의 유량은 100SCCM으로 고정하였으며, 마이크로웨이브의 power는 360~900W였고, 기판에 가해준 negative DC bias 전압은 0~-500V이었다. DC magnetron sputtering 방법에서는 반응가스로 아세틸린(C2H2) 가스를 사용하였으며, 플라즈마 발생을 용이하게 하기 위해서 Ar 가스와 혼합하여 사용하였다. Ar 가스의 유량은 10SCCM으로 고정하였으며, 아세틸렌 가스의 유량은 5~20SCCM 범위내에서 주입하였다. 이때, 기판에 가해준 negative DC bias 전압은 0~-100V이었다. 제작된 탄소막의 수소 함량을 조사하기 위하여 Fourier Transform Infrared (FTIR) 분광법과 Elastic Recoil Detection Analysis (EFDA) 법을 사용하였으며, 증착율은 SEM 단면촬영과 a-step을 이용하여 측정하였고, 막의 경도는 Micro-Hardness Testing 법을 사용하여 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.

• Corrosion Science and Technology
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• v.18 no.5
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• pp.206-211
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• 2019

Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystalline grains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardment and deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetron sputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed target power of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films was conducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The deposition temperature was varied between room temperature and $450^{\circ}C$. Above a critical bias voltage of -80 V, the NCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy (corresponding to a deposition temperature of $450^{\circ}C$ in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD) were conducted to probe the samples' structural characteristics. Of those methods, Raman spectroscopy was a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film, whereas GAXRD was insufficiently sensitive.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.109-115
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• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.