Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.07a
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- Pages.464-466
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- 2000
Crystallographic properties of AIN thin film prepared by lacing targets sputtering method
대향타겟식 스퍼터법으로 제작된 AIN 박막의 결정학적 특성
Abstract
AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N