• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.95-98
• /
• 2003

Tin doped indium oxide(ITO) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ITO films with the optimum growth conditions showed resistivity of $2.36{\times}10^{-4}(\Omega}-cm$ and transmittance of 86.28% for a film 680nm thick in the wavelength range of the visible spectrum.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.11a
• /
• pp.60-60
• /
• 1996

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.10a
• /
• pp.34.2-34.2
• /
• 2003

• Proceedings of the Korean Magnestics Society Conference
• /
• 2000.09a
• /
• pp.508-509
• /
• 2000

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2004.05a
• /
• pp.59-59
• /
• 2004

• Journal of the Korean institute of surface engineering
• /
• v.47 no.4
• /
• pp.168-173
• /
• 2014

The paper presents the comparative results of TiAlN coatings deposited by DC and pulsed DC asymmetric bipolar magnetron sputtering systems. The results show that, with the decreasing duty cycle and increasing pulse frequency, the coating morphology changes from a columnar to a dense structure, with finer grains. Pulsed sputtered TiAlN coatings showed higher hardness, higher residual stress, and smaller grain sizes than dc prepared TiAlN coatings. Moreover residual stress of pulsed sputtered TiAlN coatings increased on increasing pulse frequency. Meanwhile, the surface roughness decreased continuously with increasing pulsed DC frequency up to 50 kHz.

• Journal of the Korean institute of surface engineering
• /
• v.48 no.4
• /
• pp.136-141
• /
• 2015

The paper presents the comparative results of NbN coatings deposited by DC and pulsed DC asymmetric bipolar magnetron sputtering systems. The results show that, with the decreasing duty cycle and increasing pulse frequency, the coating morphology changes from a columnar to a dense structure, with finer grains. The Pulsed sputtered NbN coatings showed higher hardness, higher residual stress, and smaller grain sizes than those of DC prepared NbN coatings. Moreover residual stress of pulsed sputtered NbN coatings increased on increasing pulse frequency. Meanwhile, the surface roughness decreased continuously with increasing pulsed DC frequency up to 50 kHz.

• Corrosion Science and Technology
• /
• v.22 no.1
• /
• pp.30-35
• /
• 2023

Hafnium nitride (HfN) thin films were fabricated by mid-frequency magnetron sputtering (mfMS) and direct current magnetron sputtering (dcMS) and their mechanical and structural properties were compared. In particular, changes in the HfN film properties were observed by changing the pulse frequency of mfMS between 5 kHz, 15 kHz, and 30 kHz. The crystalline structure, microstructure, 3D morphology, and mechanical properties of the HfN films were compared by x-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and nanoindentation tester, respectively. HfN film deposited by mfMS showed a smoother and denser microstructure as the frequency increased, whereas the film deposited by dcMS showed a rough and sloppy microstructure. A single δ-HfN phase was observed in the HfN film made by mfMS with a pulse frequency of 30 kHz, but mixed δ-HfN and HfN_0·4 phases were observed in the HfN film made by dcMS. The mechanical properties of HfN film made by mfMS were improved compared to film made by dcMS.

• Journal of the Korean institute of surface engineering
• /
• v.41 no.5
• /
• pp.214-219
• /
• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• Journal of Sensor Science and Technology
• /
• v.16 no.2
• /
• pp.159-164
• /
• 2007

Thin films of platinum were deposited on a $Al_{2}O_{3}/ONO(SiO_{2}-Si_{3}N_{4}-SiO_{2})/Si$-substrate with an 2-inch Pt(99.99 %) target at room temperature for 20, 30 and 60 min by DC magnetron sputtering, respectively X-ray diffract meter (XRD) was used to analyze the crystallanity of the thin films and field emission scanning electron microscopy (FE-SEM) was employed for the investigation on crystal growth. The densification and the grain growth of the sputtered films have a considerable effect on sputtering time and annealing temperatures. The resistance of the Pt thin films was decreased with increasing deposition time and sintering temperature. Pt micro heater thin film deposited for 60 min by DC magnetron sputtering on an $Al_{2}O_{3}$/ONO-Si substrate and annealed at $600^{\circ}C$ for 1 h in air is found to be a most suitable micro heater with a generation capacity of $350^{\circ}C$ temperature and 645 mW power at 5.0 V input voltage. Adherence of Pt thin film and $Al_{2}O_{3}$ substrate was also found excellent. This characteristic is in good agreement with the uniform densification and good crystallanity of the Pt film. Efforts are on progress to find the parameters further reduce the power consumption and the results will be presented as soon as possible.