• Journal of the Korean Mathematical Society
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• v.52 no.5
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• pp.991-1001
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• 2015

In this work we obtain conditions for nonspecial line bundles on general ${\kappa}$-gonal curves failing to be normally generated. Let L be a nonspecial very ample line bundle on a general ${\kappa}$-gonal curve X with ${\kappa}{\geq}4$ and $deg\mathcal{L}{\geq}{\frac{3}{2}}g+{\frac{g-2}{{\kappa}}}+1$. If L fails to be normally generated, then L is isomorphic to $\mathcal{K}_X-(ng^1_{\kappa}+B)+R$ for some $n{\geq}1$, B and R satisfying (1) $h^0(R)=h^0(B)=1$, (2) $n+3{\leq}degR{\leq}2n+2$, (3) $deg(R{\cap}F){\leq}1$ for any $F{\in}g^1_k $. Its converse also holds under some additional restrictions. As a corollary, a very ample line bundle $\mathcal{L}{\simeq}\mathcal{K}_X-g^0_d+{\xi}^0_e$ is normally generated if $g^0_d{\in}X^{(d)}$ and ${\xi}^0_e{\in}X^{(e)}$ satisfy $d{\leq}{\frac{g}{2}}-{\frac{g-2}{\kappa}}-3$, supp$(g^0_d{\cap}{\xi}^0_e)={\phi}$ and deg$(g^0_d{\cap}F){\leq}{\kappa}-2$ for any $F{\in}g^1_k$.

• Bulletin of the Korean Mathematical Society
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• v.47 no.5
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• pp.907-913
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• 2010

Let D be an integrally closed domain with quotient field K, * be a star operation on D, X, Y be indeterminates over D, $N_*\;=\;\{f\;{\in}\;D[X]|\;(c_D(f))^*\;=\;D\}$ and $R\;=\;D[X]_{N_*}$. Let b be the b-operation on R, and let $*_c$ be the star operation on D defined by $I^{*_c}\;=\;(ID[X]_{N_*})^b\;{\cap}\;K$. Finally, let Kr(R, b) (resp., Kr(D, $*_c$)) be the Kronecker function ring of R (resp., D) with respect to Y (resp., X, Y). In this paper, we show that Kr(R, b) $\subseteq$ Kr(D, $*_c$) and Kr(R, b) is a kfr with respect to K(Y) and X in the notion of [2]. We also prove that Kr(R, b) = Kr(D, $*_c$) if and only if D is a $P{\ast}MD$. As a corollary, we have that if D is not a $P{\ast}MD$, then Kr(R, b) is an example of a kfr with respect to K(Y) and X but not a Kronecker function ring with respect to K(Y) and X.

• Honam Mathematical Journal
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• v.8 no.1
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• pp.51-74
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• 1986

The thery of measure is significant in that we extend from it to the theory of integration. AS specific metric outer measures we can take Hausdorff outer measure and Lebesgue-Stieltjes outer measure connecting measure with monotone functions.([12]) The purpose of this paper is to find some properties of Lebesgue-Stieltjes measure by extending it from $R^1$ to $R^n(n{\geq}1)$ $({\S}3)$ and differentiation of the integral defined by Borel measure $({\S}4)$. If in detail, as follows. We proved that if $_n{\lambda}_{f}^{\ast}$ is Lebesgue-Stieltjes outer measure defined on a finite monotone increasing function $f:R{\rightarrow}R$ with the right continuity, then $$_n{\lambda}_{f}^{\ast}(I)=\prod_{j=1}^{n}(f(b_j)-f(a_j))$$, where $I={(x_1,...,x_n){\mid}a_j$<$x_j{\leq}b_j,\;j=1,...,n}$. (Theorem 3.6). We've reached the conclusion of an extension of Lebesgue Differentiation Theorem in the course of proving that the class of continuous function on $R^n$ with compact support is dense in $L^p(d{\mu})$ ($1{\leq$}p<$\infty$) (Proposition 2.4). That is, if f is locally $\mu$-integrable on $R^n$, then $\lim_{h\to\0}\left(\frac{1}{{\mu}(Q_x(h))}\right)\int_{Qx(h)}f\;d{\mu}=f(x)\;a.e.(\mu)$.

• Journal of the Chungcheong Mathematical Society
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• v.27 no.4
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• pp.697-705
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• 2014

For a complex measure ${\mu}$ on B and $f{\in}L^2_a(B)$, the Toeplitz operator $T_{\mu}$ on $L^2_a(B,dv)$ with symbol ${\mu}$ is formally defined by $T_{\mu}(f)(w)=\int_{B}f(w)\bar{K(z,w)}d{\mu}(w)$. We will investigate properties of the Toeplitz operator $T_{\mu}$ with symbol ${\mu}$. We define the Toeplitz type operator $T^r_{\psi}$ with symbol ${\psi}$, $$T^r_{\psi}f(z)=c_r\int_{B}\frac{(1-{\parallel}w{\parallel}^2)^r}{(1-{\langle}z,w{\rangle})^{n+r+1}}{\psi}(w)f(w)d{\nu}(w)$$. We will also investigate properties of the Toeplitz type operator with symbol ${\psi}$.

• Journal of the Korean Mathematical Society
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• v.48 no.6
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• pp.1171-1187
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• 2011

Silverman [14] proved a height inequality for a jointly regular family of rational maps and the author [10] improved it for a jointly regular pair. In this paper, we provide the same improvement for a jointly regular family: let h : ${\mathbb{P}}_{\mathbb{Q}}^n{\rightarrow}{{\mathbb{R}}$ be the logarithmic absolute height on the projective space, let r(f) be the D-ratio of a rational map f which is de ned in [10] and let {$f_1,{\ldots},f_k|f_l:\mathbb{A}^n{\rightarrow}\mathbb{A}^n$} bbe finite set of polynomial maps which is defined over a number field K. If the intersection of the indeterminacy loci of $f_1,{\ldots},f_k$ is empty, then there is a constant C such that $ \sum\limits_{l=1}^k\frac{1}{def\;f_\iota}h(f_\iota(P))>(1+\frac{1}{r})f(P)-C$ for all $P{\in}\mathbb{A}^n$ where r= $max_{\iota=1},{\ldots},k(r(f_l))$.

• Bulletin of the Korean Mathematical Society
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• v.51 no.4
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• pp.1127-1133
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• 2014

Let S be a nonempty subset of a ring R. A map $f:R{\rightarrow}R$ is called strong commutativity preserving on S if [f(x), f(y)] = [x, y] for all $x,y{\in}S$, where the symbol [x, y] denotes xy - yx. Bell and Daif proved that if a derivation D of a semiprime ring R is strong commutativity preserving on a nonzero right ideal ${\rho}$ of R, then ${\rho}{\subseteq}Z$, the center of R. Also they proved that if an endomorphism T of a semiprime ring R is strong commutativity preserving on a nonzero two-sided ideal I of R and not identity on the ideal $I{\cup}T^{-1}(I)$, then R contains a nonzero central ideal. This short note shows that the conclusions of Bell and Daif are also true without the additivity of the derivation D and the endomorphism T.

• Korean Journal of Mathematics
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• v.16 no.1
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• pp.103-114
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• 2008

In this paper, we investigate the superstability problem for the pexiderized cosine functional equations f(x+y) +f(x−y) = 2g(x)h(y), f(x + y) + g(x − y) = 2f(x)g(y), f(x + y) + g(x − y) = 2g(x)f(y). Consequently, we have generalized the results of stability for the cosine($d^{\prime}Alembert$) and the Wilson functional equations by J. Baker, $P.\;G{\check{a}}vruta$, R. Badora and R. Ger, and G.H. Kim.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.330-333
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• 2005

We investigated the liquid crystal (LC) alignment phenomena using a-C:H and a-C:F:H thin films. Homogeneous alignment is obtained using ion beam treated hydrogenated amorphous carbon (a-C:H) thin films. Homeotropic alignment is obtained using F treated a-C:H thin films, namely, fluorinated amorphous carbon (a-C:F:H) thin films. We investigated the relationship between the surface properties of amorphous carbon based alignment layer and LC alignment phenomena.

• Bulletin of the Korean Mathematical Society
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• v.36 no.1
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• pp.25-31
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• 1999

Let $\nu$ be a positive Borel measure on a space of homogeneous type (X, d, $\mu$), satisfying the doubling property. A condition on a weight $\omega$ for whixh a maximal operator $M\nu f$(x) defined by M$mu$f(x)=supr>0{{{{ { 1} over {ν(B(x,r)) } INT _{ B(x,r)} │f(y)│d mu (y)}}}}, is of weak type (p,p) with respect to (ν, $omega$), is that there exists a constant C such that C $omega$(y) for a.e. y$\in$B(x, r) if p=1, and {{{{( { 1} over { upsilon (B(x,r) } INT _{ B(x,r)}omega(y) ^ (-1/p-1) d mu (y))^(p-1)}}}} C, if 1$infty$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.