• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.9
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• pp.783-789
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• 2015

This paper presents a Doherty power amplifier(DPA) operating in the 2.6 GHz band for long term evolution(LTE) systems. In order to achieve high efficiency, second and third harmonic impedances are controlled using a compact output matching network. The DPA was implemented using a gallium nitride high electron mobility transistor(GaN-HEMT) that has many advantages, such as high power density and high efficiency. The implemented DPA was measured using an LTE downlink signal with a 10 MHz bandwidth and 6.5 dB PAPR. The implemented DPA exhibited a gain of 13.1 dB, a power-added efficiency(PAE) of 57.6 %, and an ACLR of -25.7 dBc at an average output power of 33.4 dBm.

• Korean Journal of Medicinal Crop Science
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• v.5 no.1
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• pp.43-48
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• 1997

This study was conducted to improve germination ratio of Zanthoxylum piperitum A.P. DC. seeds. Stratification for 60 days after scarification of seed with sand was germination percentage to 5.4% and $GA_3$, 50ppm for 24 hrs after scarification of seed with sand showed 8.9%. Soaking the seeds in $GA_3$, 50ppm for 24 hrs after 40 to $70^{\circ}C$ hot water treatment for 10 minutes showed low germination of 4.4%. Based on $H_2SO_4$, NaOH and $HNO_3$, treatments, germination percentage did not improve at all regardless of soaking time. The highest germination of 91.1% was observed when seed was soaked in $GA_3$ 100ppm for 48 hrs after stratification for 60 days at $4^{\circ}C$. Kinetin treatment at 50ppm for 24 hrs had the greatest germination percentage of 31.7% but it did not improve germination ratio compared to $GA_3$ treatment.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.12-17
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• 2021

The electronic and magnetic properties for Mn-adsorbed on the chalcopyrite (CH) AlGaP2 semiconductor are investigated by using first-principles FPLMTO method. The clean CH-AlGaP2 without adsorbed Mn is a p-type semiconductor with a direct band-gap. The Mn-adsorbed CH-AlGaP2 exhibits the ferromagnetic state. It is more energetically stable than the other magnetic ones. The interstitial site on P-terminated surface is more energetically favorable one than the Al/Ga-terminated surface, or the other adsorbing sites. In the case of Mn-adsorbed Al/Ga-terminated surface, it is induced a strong coupling between Mn-3d and neighboring P-3p electrons. The holes of partially unoccupied minority Mn-3d state and majority (or minority) Al-3p or P-3p state are induced. Thus a high magnetic moment of Mn is sustained by holes-mediated double-exchange coupling. It is noticeable that the semiconducting and half-metallic characteristics of CH-AlGaP2:Mn thin film is disappeared.

• Proceedings of the Optical Society of Korea Conference
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• 1995.06a
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• pp.127-137
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• 1995

Anomalously large real space charge transfer through thick barries in GaAs asymmetric double quantum wells is studied by photoluminesence exitation. This inter-well excitonic transfer is very large when the barrier is the Al0.3Ga0.7As alloy, but disappears when the barrier is GaAs/AlAs digital alloy with an equivalent Al concentration of 0.28. These resilts combined with observed x and barrier thickness depence suggest that the spatial fluctuation of the atomic arrangment of Ga and Al in the alloy may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions which takes into account the side fluctuation effects.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.41-46
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• 2008

We report a high gain D-band(110 - 140 GHz) MMIC drive amplifier based on $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The amplifier shows an excellent $S_{21}$ gain characteristic greater than 10 dB in a millimeterwave frequency of 110 GHz, Also the amplifier has good reflection characteristics of a $S_{11}$ of -3.5 dB and a $S_{22}$ of -6.5 dB at 110 GHz, respectively The high performances of the MMIC drive amplifier is mainly attributed to the characteristics of the MHEMTs exhibiting a maximum transconductance of 760 mS/mm, a current gain cut-off frequency of 195 GHz and a maximum oscillation frequency of 391 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.6
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• pp.540-545
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• 2015

This paper presents the design, fabrication and measurement results of a S-band internally-matched power amplifier using Gallium Nitride High Electron Mobility Transistor(GaN HEMT) die. In order to fabricate the S-band internally-matched power amplifier, a high dielectric substrate and alumina were used for input/output matching circuits. The measured output power is 55.4 dBm, the drain efficiency is 78 % and the power gain is 11 dB under pulse operation at the frequency of 3 GHz.

• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.108-115
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• 2018

The increasing demands for three-dimensional (3D) electronic and optoelectronic devices have triggered interest in epitaxial growth of 3D semiconductor materials. However, most of the epitaxially-grown nano- and micro-structures available so far are limited to certain forms of crystal arrays, and the level of control is still very low. In this review, we describe our latest progress in 3D epitaxy of oxide and nitride semiconductor crystals. This paper covers issues ranging from (i) low-temperature solution-phase synthesis of a well-regulated array of ZnO single crystals to (ii) systematic control of the axial and lateral growth rate correlated to the diameter and interspacing of nanocrystals, as well as the concentration of additional ion additives. In addition, the critical aspects in the heteroepitaxial growth of GaN and InGaN multilayers on these ZnO nanocrystal templates are discussed to address its application to a 3D light emitting diode array.

• BMB Reports
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• v.32 no.1
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• pp.51-59
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• 1999

The Korean radish cationic peroxidase (KRCP) promoter, comprising nucleotides -471 to +704 relative to the transcriptional initiation site, was fused to the GUS gene and transformed to tobacco BY-2 cells. We examined how auxin (2,4-dichlorophenoxyacetic acid, 2,4-D), cytokinin (6-benzylaminopurine, BAP), gibberellic acid ($GA_3$), abscisic acid (ABA), methyl jasmonate (MeJA), and phosphatidic acid (PA) affect the GUS expression in the presence or absence of 2,4-D in a modified LS medium. Exogenous 2,4-D or BAP greatly decreased the GUS expression regulated by the KRCP promoter in a modified LS medium containing 0.2 mg/l 2,4-D. $GA_3$ increased the GUS expression and ABA completely reduced the inductive effect of $GA_3$. The GUS expression was also increased dose-dependently by plant defense regulators, MeJA and PA. In contrast to the above results, auxin deprivation from the modified LS medium increased the GUS expression after treatment with exogenous 2,4-D whereas BAP still greatly decreased the GUS expression dose-dependently. $GA_3$ or MeJA slightly decreased the GUS expression. The data suggest that auxin deprivation changes the sensitivity of the suspension cells to exogenous chemicals and that the regulation of the KRCP promoter by 2,4-D, $GA_3$, and MeJA is dependent on auxin, whereas the regulation by BAP is not. This study will be valuable for understanding the function and expression mode of the Korean radish cationic peroxidase in Korean radish.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.66-74
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• 1999

InAlGaAs/InGaAs HBTs with the various emitter junction gradings(xf=0.0-1.0) and the modified collector structures (collector- I;n-p-n, collector-II;i-p-n) are simulated and analyzed by HMC (Hybrid Monte Carlo) method in order to find an optimum structure for the shortest transit time. A minimum base transit time($ au$b) of 0.21ps was obtainsed for HBT with the grading layer, which is parabolically graded from $x_f$=1.0 and xf=0.5 at the emitter-base interface. The minimum collector transit time($\tau$c) of 0.31ps was found when the collector was modified by inserting p-p-n layers, because p layer makes it possible to relax the electric field in the i-type collector layer, confining the electrons in the $\Gamma$-valley during transporting across the collector. Thus InAlGaAs/InGaAs HBT in combination with the emitter grading($x_f$=0.5) and the modified collector-III showed the transit times of 0.87 psec and the cut-off frequency (f$\tau$) of 183 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.3
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• pp.573-581
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• 1994

A microstrip antenna having a dual polarization and a smaller size than feed horn polarizer of F.R.R.S(Faraday Rotation Rotary Switch) is designed, in which GaAs MESFET switches are inserted for selective reception of RHCP or LHCP. For an accurate analysis of the resonance frequency, input impedance and radiation pattern of the circularly polarized microstrip antenna, finite difference time domain (FDTD) method is used. When the GaAs MESFET switch in the feeder is ON-stats, the truncated patch antenna has a gain of about 16.6dB including amplifier gain, while the switch is OFF-state, this has a isolation level of -24dB.