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Development of a Two-Stage High Gain D-Band MMIC Drive Amplifier Using $0.1{\mu}m$ Metamorphic HEMT Technology  

Lee, Bok-Hyung (H/W1 Group, H/W Team, Samsung Thales Co., LTD)
Rhee, Jin-Koo (Department of Electronic Eng., Dongguk University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.12, 2008 , pp. 41-46 More about this Journal
Abstract
We report a high gain D-band(110 - 140 GHz) MMIC drive amplifier based on $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The amplifier shows an excellent $S_{21}$ gain characteristic greater than 10 dB in a millimeterwave frequency of 110 GHz, Also the amplifier has good reflection characteristics of a $S_{11}$ of -3.5 dB and a $S_{22}$ of -6.5 dB at 110 GHz, respectively The high performances of the MMIC drive amplifier is mainly attributed to the characteristics of the MHEMTs exhibiting a maximum transconductance of 760 mS/mm, a current gain cut-off frequency of 195 GHz and a maximum oscillation frequency of 391 GHz.
Keywords
Metamorphic HEMT; D-Band; MMIC drive amplifier;
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