Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)

Optical Society of Korea (한국광학회)
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Anomalous Real Space Charge Transfer through Thick Barrieres in GaAs/$Al_xGa_{1-x}$As Asymmetric Double Quantun Wells: $Al_xGa_{1-x}$As as a Percolating Barrier

  • Kim, D. S. (Department of Physics, Seoul National University,) ;
  • H. S. Ko (Department of Physics, Seoul National University, Seoul 151-742) ;
  • Kim, Y. M. (Department of Physics, Seoul National University, Seoul 151-742) ;
  • S. J. Rhee (Department of Physics, Seoul National University) ;
  • Kim, W. S. (Department of Physics, Seoul National University) ;
  • J. C. Woo (Department of Physics, Seoul National University) ;
  • Park, H. J. (Department of Physics and Center for Theoretical Physics, Seoul National University) ;
  • J. Ihm (Department of Physics and Center for Theoretical Physics, Seoul National University) ;
  • D. H. Woo (Korea Institute of Science and Technology)
  • Published : 1995.06.01
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Abstract

Anomalously large real space charge transfer through thick barries in GaAs asymmetric double quantum wells is studied by photoluminesence exitation. This inter-well excitonic transfer is very large when the barrier is the Al0.3Ga0.7As alloy, but disappears when the barrier is GaAs/AlAs digital alloy with an equivalent Al concentration of 0.28. These resilts combined with observed x and barrier thickness depence suggest that the spatial fluctuation of the atomic arrangment of Ga and Al in the alloy may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions which takes into account the side fluctuation effects.

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