• 한국전자파학회논문지
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• 제30권6호
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• pp.467-478
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• 2019

본 논문에서는 전자전용 재밍 송신기에 사용하기 위해서 개발된 광대역 평면형 능동위상배열 안테나 시스템의 설계 및 제작 그리고 측정 결과를 소개한다. 설계된 시스템은 $45^{\circ}$ slant 광대역 복사소자를 $8{\times}8$ 삼각 배열 구조로 배치하고, 광대역 GaN 반도체 고출력 증폭기와 GaAs 다기능집적회로(MFC)를 적용한 64개의 송신 채널을 구성하여 개발하였다. GaAs다기능집적회로는 광대역에서 빔 편이 현상을 피하기 위한 실시간 지연소자, 디지털 감쇠기 그리고 GaAs 구동증폭기를 포함하고 있어서 송신 빔 조향을 할 수 있으며, 시스템의 전자적 빔 조향 범위는 방위각/고각 방향으로 각각 ${\pm}45^{\circ}/{\pm}25^{\circ}$ 범위에서 가능하다. 개발된 시스템의 송신 빔 패턴 성능을 확인하기 위해 근접 전계 시험 시설을 이용하였다. 전자전용 송신 시스템 빔 패턴 측정 결과, 시스템의 유효방사출력은 목표성능(P) 대비 최대 9.8 dB 이상을 만족하였고, 방위각/고각 방향으로 각각 ${\pm}45^{\circ}/{\pm}25^{\circ}$ 빔 조향 결과 요구성능에 만족함을 확인하였다.

• 한국가시화정보학회:학술대회논문집
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• 한국가시화정보학회 2001년도 Proceedings of 2001 Korea-Japan Joint Seminar on Particle Image Velocimetry
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• pp.6-13
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• 2001

A new GA-3D-PTV technique has been constructed to measure an impinging jet. The measurement system consists of three CCD cameras, Ar-ion laser, an image grabber and a host computer. GA (Genetic Algorithm) was used based on one-to-one correspondences in order to take advantage of the combinatorial optimization in tracking the pairs of the whole particles of the two images having a time interval. Two fitness functions were introduced in order to enhance the correspondences of the particles. One was based on a concept of the continuum theory and the other one was based on a minimum distance error. The constructed GA-3D-PTV system was applied in success to the measurement of flow characteristics of the impinging jet.

• 한국산학기술학회논문지
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• 제12권5호
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• pp.2241-2248
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• 2011

본 논문에서는 고출력 및 고효율 특성을 지니는 질화갈륨(gallium nitride, GaN) 고출력 트랜지스터 소자를 이용하여 WiMAX 및 LTE(long term evolution) 시스템에 사용 가능한 60watt급 고출력증폭기 모듈을 팔렛트(palette) 타입으로 개발한 결과에 대하여 기술한다. 높은 이득을 얻기 위한 라인업(lineup) 구성을 위해 저전력이면서 고이득을 지니는 전치증폭단, 8watt급의 GaN 구동증폭단, 그리고 30watt급 GaN 소자 2개를 도허티(doherty) 구조로 구성한 60watt 고출력증폭단을 사용하였으며, 이로부터 2.5~2.68GHz에서 61.4dB의 이득과 ${\pm}$0.075dB의 우수한 이득 평탄도를 얻었다. 특히 구동단과 고출력증폭단은 고효율 및 고출력 특성의 GaN 소자를 사용하였고, 또한 추가적인 효율 개선을 위해 도허티 구조를 적용함으로써 보다 높은 효율을 가지도록 하였다. 현재 전 세계적으로 널리 사용되고 있는 WiMAX 신호를 사용하여 제작된 팔렛트 타입의 증폭기 모듈의 성능을 측정하였는데, RRH(remote radio head) 타입으로 구성된 사용 예에서 WiMAX 변조 신호 10watt 출력 기준으로 약 37~38%의 효율을 나타내었다. 제작된 증폭기 모듈을 디지털 전치왜곡기(digital predistorter, DPD)와 연동하여 시험한 결과 WiMAX 변조 신호 10watt 출력에서 ACLR은 46dBc 이상의 특성을 지닌다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2002년도 학술대회지
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• pp.249-252
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• 2002

Turbulent properties of the wake of a circular cylinder were measured The diameter of the cylinder is l0mm and the Reynolds number is 420. A new 3D-PTY system was constructed and a genetic algorithm (GA) was introduced in order to increase the number of instantaneous three-dimensional velocity vectors. In the GA two fitness functions were introduced in order to enhance the correspondences of the particles. The measurement system consists of three CCD cameras, Ar-ion laser, an image grabber and a host computer. More than 3000 instantaneous three-dimensional velocity vectors were obtained by the system. The database of the turbulent properties of the circular cylinder was constructed by the constructed 3D-PTV system.

• 한국자기학회지
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• 제18권2호
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• pp.67-70
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• 2008

$Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1)의 조성을 가지는 분말 시료를 sol-gel 법과 진공봉합 열처리를 이용하여 합성하였다. x선 회절기, $M\ddot{o}ssbauer$ 분광기를 이용하여 시료의 결정구조 및 Ga 이온의 점유도에 관하여 연구하였다. XRD측정결과 $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$ (x=0, 1)의 결정구조는 Ia3d의 공간그룹을 갖는 cubic 구조이며, $Tb_2Bi_1Fe_5O_{12}$와 $Tb_2Bi_1Ga_1Fe_4O_{12}$의 격자상수 $a_0$는 각각 $12.497\AA$, $12.465\AA$으로 분석되었다. Rietveld 분석법을 이용하여 각 이온들이 점유하는 각각의 부격자 위치를 연구하였다. $Tb_2Bi_1Ga_1Fe_4O_{12}$ 시료의 분석결과, Tb, Bi 이온은 24c 자리에, Fe 이온은 24d, 16a 자리를 점유하였으며, 비자성 이온인 Ga 이온은 모두 16a 자리를 점유하는 것으로 분석되었다. $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1)의 미시적인 자기구조를 분석하기 위해 시료들의 $M\ddot{o}ssbauer$스펙트럼을 측정하였다. 상온에서의 $M\ddot{o}ssbauer$스펙트럼 측정결과 철 이온들의 흡수 면적비는 $Tb_2Bi_1Fe_5O_{12}$의 경우 24d와 16a자리에서 각각 60.8%, 39.2%로, $Tb_2Bi_1Ga_1Fe_4O_{12}$의 경우 24d와 16a자리에서 각각 74.7%, 25.3%로 분석되었다. 철 이온들의 흡수 면적비 분석을 통해 비자성이온인 Ga은 모두 16a 자리를 점유하는 것을 알 수 있었다.

• 전자공학회논문지D
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• 제35D권5호
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• pp.40-47
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• 1998

This paper report sthe design, fabrication and characterization of an AlGaAs/GaAs HBT (heterojunction bipolar transistor) with an air-bridge isolation structure which is made to improve high frequency characteristics for the application to the mobile communication system in the next genration. We found that the size, shape and structure of HBT have an effect on the high frequency operation. The measured dc and ac characteristics of the four type HBTs were compared and analyzed. An E-type HBT with an air-bridge structure by undercut etching exhibited .beta.=56, $V_{off-set}$ = 0.3 V, B $V_{CEO}$=7.0V with $f_{T}$=40 GHz and $f_{max}$=45GHz at a collector current density of 7.1*10$^{4}$ A/c $m^{2}$.>.

• Journal of electromagnetic engineering and science
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• 제4권4호
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• pp.156-161
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• 2004

The MMIC cascode VCO is designed, fabricated, and measured for Ku-band Low Noise Blcok(LNB) system using InGaP/GaAs HBT technology. The phase noise of -116.4 dBc/Hz at 1 MHz offset with output power of 1.3 dBm is obtained at 11.526 GHz by applying 3 V and 11 mA, which is comparatively better characteristics than compared with the different configuration VCOs fabricated with other technologies. The simulated results of oscillation frequency and second harmonic suppression agree with the measured results. The phase noise is improved due to the use of the smallest value of inductor in frequency determining network and the InGaP ledge function of the technology. The chip size of $830\time781\;{\mu}m^2$ is also achieved.

• 전자공학회논문지D
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• 제34D권11호
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• pp.30-36
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• 1997

AlGaAs/GaAs HBTs are developed well enough to be commercialized as an active device in optical transmission system, but there remains the unanswered questions about reliability. In this paper we applied the reverse constant current stress at the high voltage in avalanche region for a long time to find out a new degradation mechanism of junctrion I-V. The unction off-set voltage at which the current vanishes to zero was shifted to the negative direction of applied bias due to the increment of leakage current as the stress time increases. It was identified that the degradation was induced by the hot carriers which were generated at space charge region and trapped at the interface between GaAs base and the passivation nitride enhancing the electric field across the nesa edge.

• 전자공학회논문지D
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• 제35D권3호
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• pp.11-17
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• 1998

Although GaAs HBTs are very attractive for high power amplifier because of their power handling capablity, they can't be actively commercialized due to the degradation of current gain occured in hihg current operation. In this paper we analyzed the type of current gain degradation of GaAs HBTs under high constant current stress, and identified the mechanism by using two dimensional numerical simulation. The cause of degradation was found out to be the variation of surface recombination states at the interface between GaAs extrinstic base and the nitride passivating the surface of base. The energy radiated from recombination of carriers in bulk as well as near the surface is estimated to activate the change of the surface states.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.257-261
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• 2015

We report on GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) that can cover the spectral range of $3.6-25{\mu}m$. One advantage of the GaAs QWIPs is the wavelength tenability as a function of their structural parameters. We have performed a systematic calculation on the detection wavelength of a typical $GaAs/Al_xGa_{1-x}As$ multi-quantum-well photodetector, with the aluminum mole fraction (x) of $Al_xGa_{1-x}As$ barrier in the range of 0.15-0.43 and the quantum-well width range from 30 to 60 $60{\AA}$. Design and fabrication of a QWIP based on $GaAs/Al_{0.23}Ga_{0.77}As$ structure with $37{\AA}$-thick well width has been carried out. The calculated operation wavelength of the QWIP is in a good agreement with the experimental data taken by photo response and activation energy calculation from thermal quenching of integrated photoluminescence.