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http://dx.doi.org/10.5757/ASCT.2015.24.6.257

Investigation of detection wavelength of Quantum Well Infrared-Photodetector  

Hwang, S.H. (Center for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology (KIST))
Lim, J.G. (Center for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology (KIST))
Song, J.D. (Center for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology (KIST))
Shin, J.C. (Center for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology (KIST))
Heo, D.C. (Center for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology (KIST))
Choi, W.J. (Center for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology (KIST))
Publication Information
Applied Science and Convergence Technology / v.24, no.6, 2015 , pp. 257-261 More about this Journal
Abstract
We report on GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) that can cover the spectral range of $3.6-25{\mu}m$. One advantage of the GaAs QWIPs is the wavelength tenability as a function of their structural parameters. We have performed a systematic calculation on the detection wavelength of a typical $GaAs/Al_xGa_{1-x}As$ multi-quantum-well photodetector, with the aluminum mole fraction (x) of $Al_xGa_{1-x}As$ barrier in the range of 0.15-0.43 and the quantum-well width range from 30 to 60 $60{\AA}$. Design and fabrication of a QWIP based on $GaAs/Al_{0.23}Ga_{0.77}As$ structure with $37{\AA}$-thick well width has been carried out. The calculated operation wavelength of the QWIP is in a good agreement with the experimental data taken by photo response and activation energy calculation from thermal quenching of integrated photoluminescence.
Keywords
Quantum well; Infrared; Photodetector; QWIP;
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