• Korean Journal of Materials Research
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• v.16 no.5
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• pp.297-301
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• 2006

Si/Mo multilayer anode consisting of active/inactive material was prepared using rf/dc magnetron sputtering. Molybdenum acts as a buffer against the volume change of the Silicon. Multilayer deposited on RT (reversible treatment) copper foil current collector to enhance adhesion between Silicon and copper foil. Deposited Silicon was identified as an amorphous. Amorphous has a relatively open structure than crystal structure, thus prevents the lattice expansion and has many diffusion paths of Li ion. When deposited time of Silicon and Molybdenum is 30 second and 2 second respectably, electrode has more capacity and good cycle stability. A 3000 nm thick multilayer was maintained 99% of the initial capacity (1624 $mAhg^{-1}$) after 100 cycles. As the increase of the multilayer thickness (4500 nm, 6000 nm), Si/Mo mutilayer anodes show aggravation cycle stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.168-171
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• 2002

A SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this thesis. The prototype is fabricated by using the Hynix 0.6$\mu\textrm{m}$ P-substrate twin-well double poly three-metal CMOS Process. The fabricated SSIMT shows that variation of the collector current is extremely linear by varing the magnetic induction from -200mT to 200mT at I$\_$B/=500${\mu}$A, V$\_$CE/=2V and V$\_$SUB/=5V. The relative sensitivity is up to 120%/T. At B = 0, magnetic offset is about 79mT, there relative sensitivity is 30.5%/T. The nonlinearity of the fabricated SSIMT is measured about 1.4%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.151-151
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• 2008

바이폴러 트랜지스터(이하 BJT)의 고온 콜렉터-베이스 역전압 수명시험을 실시하였고, 수영시험 전후의 특성평가를 통해 BJT의 고장모드를 분석하였다. 시험조건은 주위온도 $150^{\circ}C$에서 콜렉터-베이스 정격 역전압의 80%를 인가한 상태에서 실시하였으며, 시료수는 57개이고 최종 목표 시험시간은 2,000시간이다. 중간측정을 통해 BJT의 특성열화를 관찰하였으며, 1,500시간 경과 후 1개 시료에서 제품규격을 벗어나는 데이터가 측정되었다. 해당 시료를 분석한 결과 콜렉터-베이스 누설전류 및 전류이득($\beta$)이 증가하였고, 저주파에서의 junction capacitance 가 정상품 대비 크게 관찰되었다. 측정결과를 통해 누설전류 증가 및 이득이 증가한 원인을 추정하였다.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.245-248
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• 2000

In this paper, we present a high-performance SiGe HBT's RF input impedance parameter extraction method. The SiGe HBT has emitter width of 0.5${\mu}{\textrm}{m}$ and length of 6${\mu}{\textrm}{m}$. S-parameter has been measured with the collector current of 1~3㎃ using on-wafer RF measuring system . The pre-calculation method was used in order to overcome the local minimum problem. This method enabled us to extract a RF(1~10㎓) input impedance parameter.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.84-92
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• 1998

A program was developed to analyze the electrical characteristics and harmonic distrotion in a two-dimensional silicon BJT. The finite difference equations of the small signal and its second and thired harmonics for basic semiconductor equations are formulated treating the nonlinearity and time dependence with Volterra series and Taylor series. The soluations for three sets of simultaneous equations were obtained sequantially by a decoupled iteration method and each set was solved by a modified Stone's algorithm. Distortion magins and ac parameters such as input impedance and current gains are calculated with frequency and load resistance as parameters. The distortion margin vs. load resistancecurves show cancellation minima when the pahse of output voltage shifts. It is shown that the distortionof small signal characteristics can be reduced by reducing the base width, increasing the emitter stripe length and reducing the collector epitaxial layer doping concentration in the silicon BJT structure. The simulation program called TRADAP can be used for the design and optimization of transistors and circuits as well as for the calculation of small signal and distortion solutions.

• Proceedings of the KSR Conference
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• 2006.11a
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• pp.209-218
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• 2006

This paper presents the comparison and analysis of the power supply system of a Maglev train and conventional electric railway. Even though all Maglev trains have batteries on their vehicles, electric power supply from the ground side is necessary for levitation, propulsion, on-board electrical equipment, battery recharging, and so on. At low speeds up to $100{\sim}150(km/h)$, the Maglev train, generally, uses a mechanical contact, a current collector as same as conventional electric railway. However, at high speeds, the Maglev train can no longer obtain power from the ground side by using a mechanical contact. Therefore, high speed Maglev trains use their own way to deliver the power to the vehicle from the ground. In this paper, the power supply systems of the german, japanese, and korean low- and high-speed Maglev trains have been reviewed.

• Journal of the Korean Applied Science and Technology
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• v.32 no.4
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• pp.718-723
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• 2015

For the fabrication of the Si negative electrode in Li-ion batteries (LIBs) containing the cross-linking polymer binder, in this work, the urethane acrylate (UA) oligomer was synthesized via a simple synthetic process. The cross-linked poly(urethane acrylate) (CPUA)/carbone black (CB)/Si composite (CPUA/CB/Si composite) was fabricated through reactions between their reactive vinyl segments in the UA oligomer. Interestingly, the CPUA/CB/Si composite showed better cycle performance than the poly(vinylidene fluoride) (PVdF)/CB/Si composite (PVdF/CB/Si composite) and the polyurethane (PU)/CB/Si composite (PU/CB/Si composite). The CPUA/CB/Si composite had the best lithiation of about $2586mAh\;g^{-1}$. The UA oligomer showed a good compatibility with the electrode materials and current collector after and before a curing process.

• Journal of Mechanical Science and Technology
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• v.20 no.3
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• pp.409-417
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• 2006

Polymer nanofibers can be generated by a electrospinning process. The process involves electrically charged jet of polymer solutions evolving from a droplet. The jet stretches in vertical direction due to the difference between charged particle and constant current located at the collector, while the Coulomb and viscoelastic forces start to contribute to radial and azimuthal (torsional) stretching. In this paper, the unstable dynamics of the liquid polymer jet is examined experimentally and theoretically. A complex viscoelastic rheological model has been adopted to analyze the behavior of a charged liquid jet. The model includes complex phenomena of stress relaxation of the liquid jet resulting from the competing force components. The experimental data of the jet paths captured by high-speed videocamera also confirm the similar behavior with the predictions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1029-1033
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• 2004

In this paper, we propose a new Suppressed Sidewall Injection Magnetotransistor(SSIMT) architecture, which allows to overcome the restriction of the standard CMOS technology and achieve high linearity. The proposed SSIMT is designed based on the Hynix 0.6 um standard CMOS technology. The fabricated SSIMT has been experimentally verified. The SSIMT shows that the change of collector current is extremely linear as a function of the magnetic induction at $I_{B}$ =500$\mu$A, $V_{CE}$ =2V and VSE =5 V. The relative sensitivity is up to 120 %/T. The magnetic conversion offset is about 79 mT with 30.5 %/T relative sensitivity. The nonlinearity of the fabricated SSIMT is measured about 1.4 %.%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.338-338
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• 2015

VRFB(Vanadium Redox Flow Battery)는 바나듐계 이온을 전해질로 사용하는 레독스 흐름 전지로, 전해질의 양이 전지의 용량을 결정하기 때문에 주로 대용량의 전력이 필요한 플랜트 등에서 주로 사용하는 전지이다. 이 VRFB내에는 Current collector의 부식 방지용으로 두꺼운 Graphite판을 BP(Bipolar plate)로 사용한다. 플랜트에서는 대용량 전지를 필요로 하여 Single stack으로는 사용되기 어렵고, Multi stack으로 주로 사용한다. Multi stack의 경우, 수 백장의 BP가 들어가 전지의 부피가 매우 커지게 되고, 이에 본 연구에서는 BP의 두꺼운 Graphite를 얇은 $TiO_2$ 기판으로 교체하여 성능을 비교하는 연구를 진행하였다. Ti 금속기판을 양극산화법으로 $TiO_2$ 나노튜브 구조를 만든 후, $TiO_2$의 전도도 향상을 목적으로 $IrO_2$를 코팅하였다. 결과적으로 기존의 Graphite에 비해 전기화학적 특성이 향상되었음을 확인하였으며, Cell test를 통해 VRFB의 성능을 평가하였다.