• Journal of the Korean Chemical Society
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• v.38 no.7
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• pp.473-479
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• 1994

Tungsten thin film was deposited on p-(100) silicon substrate by using the LPCVD(low pressure chemical vapor deposition) technique. $WF_6$ was used as a source gas for tungsten and $SiH_4$ was used as a reducing gas for $WF_6$. Tungsten thin film was deposited by either SiH4 or Si substrate reduction of $WF_6$ under cold-wall condition and it was deposited by $SiH_4$ reduction of $WF_6$ under hot-wall condition. The crystal structure of deposited thin film under both conditions were identified to be bcc (body centered cubic). The physical and electrical properties of deposited thin films were investigated. The deposited film under hot-wall condition changed to $WSi_2$ film by the annealing under $800^{\circ}C.$ From the experimental results and theoretical considerations, the change of the crystal structure of the thin film by annealing was discussed. $WSi_2$ thin film, which was known to have good compatibility with Si substrate, could be produced under hot-wall condition although the film properties were superior under cold-wall condition.

• Journal of the Korean Magnetics Society
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• v.21 no.4
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• pp.127-131
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• 2011

In this paper, we study the electronic and magnetic properties of Cr substituted SiTe in the rock-salt structure compound using the full potential linearized augmented plane wave method within the generalized gradient approximation to the exchange correlation potential. Two stoichiometries are studied: $CrSi_3Te_4$ with 25 %, and $CrSiTe_2$ with 50 % Cr substitution. We found, from the total energy calculations, that the equilibrium lattice constant for cubic $CrSi_3Te_4$ is 11.64 a.u. and a = 7.89 a.u. and c = 11.13 a.u. for tetragonal $CrSiTe_2$. The integer value of the calculated magnetic moment per unit cell, $4{\mu}_B$ for $CrSiTe_2$ suggests that this compound is halfmetallic. The magnetic moment per unit cell for $CrSi_3Te_4$ is slightly larger than $4{\mu}_B$. The magnetic moment on Cr atoms are 3.61 and $3.62{\mu}_B$ in the $CrSi_3Te_4$ and $CrSiTe_2$, respectively. The presence of Cr atoms causes that the other atoms become slightly magnetized in both compounds. The electronic properties and the magnetism are discussed with the calculated spin-polarized density of states.

• Korean Journal of Metals and Materials
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• v.49 no.6
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• pp.488-492
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• 2011

Heat-treatable Al-Mg-Si-Cu alloy sheets, which are expected to have a growing demand, were fabricated by Cross rolling to improve their formability. The mechanical properties and texture of the sheets after the final annealing process were investigated by a tensile test, EBSD and XRD analysis. The grain size of the cross-rolled sheets was remarkably decreased compared to conventional rolled sheets, and the R-value of the cross-rolled sheets was notably increased by about one and a half times that of the conventional rolled sheet. Cube{001}<100> and cubic system orientations were strongly developed in conventional rolled sheets. However, randomized textures were formed in the cross-rolled sheets without specific texture. It is thought that much shear deformation was induced during the cross rolling. The results show that the cross rolling method is effective for improving the R-value of aluminum alloys sheets and their grain refinement. As a result, it is considered that cross rolling is effective for improving formability.

• Journal of the Korean Society of Food Science and Nutrition
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• v.38 no.9
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• pp.1284-1288
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• 2009

Identification of various inorganic compound crystals contained in solar salts, which are produced from 12 areas of Jeonnam, was firstly made by the X-ray diffraction (XRD) technique. The analysis of the XRD spectra was carried out on the basis of Joint Committee on Powder Diffraction Standards (JCPDS) data and the results of Energy Dispersive X-ray Spectrometer (EDX) measurements. In particular, the analysis of the XRD spectra supported that each solar salt contains $Na_2S$ (Shinan Jeungdo and Sinui), $KMgCl_3$ (Shinan Bigeum), $Ca(ClO_3)_2$ (Shinan Docho), $CaAl_4O_7$ (Haenam Songji), $CaSiO_3$ and $CaCl_2$ (Goheung) as inorganic compound crystals, which have not been reported for the solar salts. Also, the XRD results indicated that the solar salts maintain a cubic NaCl crystal structure without any change of lattice parameters etc. However, it was shown in the Field Emission Scanning Electron Microscope (FE-SEM) images that an external form of the solar salts has a lamination layer shape of a cubic structure, which is different from a simple cubic form for the purified salts and the reagent NaCl.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.770-776
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• 2003

#140 mesh and #600 mesh wheels were adopted to grind (111) and (100) oriented single crystalline silicon wafer and the grinding induced change of the surface integrity was investigated. For this purpose, microroughness, residual stress and phase transformation were analyzed for the ground surface. Microroughness was analyzed using AFM (Atomic Force Microscope) and crystal structure was analyzed using micro-Raman spectroscopy. The residual stress and phase transformation were also analyzed after thermal annealing in the air. As a result, microroughness of (111) wafer was larger than that of (100) wafer after grinding. It was observed using Raman spectrum that the silicon was transformed from diamond cubic Si-I to Si-III(body centered tetragonal) or Si-XII(rhombohedral). Residual stress relaxation was also shown in cavities which were produced after grinding. The thermal annealing was effective for the recovery of the silicon phase to the original phase and the residual stress relaxation.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.243-249
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• 2014

Three single crystals of fully dehydrated $Co^{2+}$-exchanged zeolite Y (Si/Al = 1.56) were prepared by the exchange of $Na_{75}$-Y ($|Na_{75}|[Si_{117}Al_{75}O_{384}]$-FAU) with aqueous streams 0.05 M in $Co(NO_3)_2$, pH = 5.1, at 294 K for 6 h, 12 h, and 18 h, respectively, followed by vacuum dehydration at 673 K. Their single-crystal structures were determined by synchrotron X-ray diffraction techniques in the cubic space group Fd3m at 100(1) K. They were refined to the final error indices $R_1/wR_2$ = 0.0437/0.1165, 0.0450/0.1228, and 0.0469/0.1278, respectively. Their unit-cell formulas are $|Co_{29.1}Na_{11.8}H_{5.0}|[Si_{117}Al_{75}O_{384}]$-FAU, $|Co_{29.8}Na_{11.0}H_{4.4}|[Si_{117}Al_{75}O_{384}]$-FAU, and $|Co_{30.3}Na_{9.5}H_{4.9}|[Si_{117}Al_{75}O_{384}]$-FAU, respectively. In all three crystals, $Co^{2+}$ ions occupy sites I, I' and II; $Na^+$ ions are also at site II. The tendency of $Co^{2+}$ exchange slightly increases with increasing contact time as $Na^+$ content and the unit cell constant of the zeolite framework decrease.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.3
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• pp.103-111
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• 2021

Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCl_n, AlCl_n and SiCl_n gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Applied Chemistry for Engineering
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• v.21 no.6
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• pp.694-696
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• 2010

We have synthesized boron (or phosphorous) doped silicon nanoparticles (Si-NPs) by a solution process. The surfaces of the Si-NPs were terminated with various alkyl groups to form a protecting layer. The Si-NPs were characterized by UV-Vis, PL, FTIR, and NMR. Through a microwave sintering process, the crystalline thin films of the Si-NPs were prepared by removing the surface alkyl groups. The TEM and SEM images reveal that contiguous films as large as $200{\mu}m$ in diameter were formed with a cubic structure. The electrical conductivity of the Si film was controlled by a doping type.