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http://dx.doi.org/10.4191/KCERS.2003.40.8.770

Thermal Annealing Effect on the Machining Damage for the Single Crystalline Silicon  

정상훈 (연세대학교 세라믹공학과)
정성민 (연세대학교 세라믹공학과)
오한석 ((주)새빛 생산기술연구소)
이홍림 (연세대학교 세라믹공학과)
Publication Information
Abstract
#140 mesh and #600 mesh wheels were adopted to grind (111) and (100) oriented single crystalline silicon wafer and the grinding induced change of the surface integrity was investigated. For this purpose, microroughness, residual stress and phase transformation were analyzed for the ground surface. Microroughness was analyzed using AFM (Atomic Force Microscope) and crystal structure was analyzed using micro-Raman spectroscopy. The residual stress and phase transformation were also analyzed after thermal annealing in the air. As a result, microroughness of (111) wafer was larger than that of (100) wafer after grinding. It was observed using Raman spectrum that the silicon was transformed from diamond cubic Si-I to Si-III(body centered tetragonal) or Si-XII(rhombohedral). Residual stress relaxation was also shown in cavities which were produced after grinding. The thermal annealing was effective for the recovery of the silicon phase to the original phase and the residual stress relaxation.
Keywords
Silicon; Microroughness; Micro-Raman spectroscopy; Residual stress; Phase transformation;
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Times Cited By KSCI : 1  (Citation Analysis)
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