• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.18 no.5
• /
• pp.449-454
• /
• 2009

This paper presents an experimental study on the failure characteristics of SnAgCu lead-free solder balls. To estimate the effect of Ag, three types of SnAgCu balls are first prepared by varying the weight percent of Ag(1.0, 3.0, 4.0 wt%) and then analyzed by reliability tests such as thermal shock, high speed ball shear, and drop tests. Thermal shock test reveals that the higher the weight percent of Ag is, the longer the fatigue lift becomes. To the contrary, high speed ball-shear test and drop test show that the shear strength and the fracture toughness of solder balls are inversely proportional to the weight percent of Ag, respectively, Reasons for these observations will be further investigated In the future work.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.1
• /
• pp.27-30
• /
• 2012

This paper proposes a micro gas sensor for measuring $H_2S$ gas. This is based on a $SnO_2$-CuO multi-layer thin film. The sensor has a silicon diaphragm, micro heater, and sensing layers. The micro heater is embedded in the sensing layer in order to increase the temperature to an operating temperature. The $SnO_2$-CuO multi layer film is prepared by the alternating deposition method and thermal oxidation which uses an electron beam evaporator and a thermal furnace. To determine the effect of the number of layers, five sets of films are prepared, each with different number of layers. The sensitivities are measured by applying $H_2S$ gas. It has a concentration of 1 ppm at an operating temperature of $270^{\circ}C$. At the same total thickness, the sensitivity of the sensor with multi sensing layers was improved, compared to the sensor with one sensing layer. The sensitivity of the sensor with five layers to 1 ppm of $H_2S$ gas is approximately 68%. This is approximately 12% more than that of a sensor with one-layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.321.1-321.1
• /
• 2013

높은 광흡수 계수를 갖는 Cu(In,Ga)Se2(CIGS) 화합물 박막 소재는 고효율 태양전지 양산을 위해 가장 전도유망한 재료이나 상대적으로 매장량이 적은 In 및 Ga을 사용한다는 소재적 한계가 있다. Cu2ZnSnSe4(CZTSe) 혹은 Cu2ZnSnS4(CZTS)와 같은 Cu-Zn-Sn-Se계 화합물 반도체는 CIGS 내 희소원소인 In과 Ga이 범용원소인 Zn 및 Sn으로 대체된 소재로써 미래형 저가 태양전지 개발을 위해 활발히 연구되고 있는데, 그 화합물 조합에 따라 0.8eV부터 1.5eV까지의 에너지 밴드갭을 갖는 것으로 알려져 있다. 본 연구에서는 열분해법으로 CZTS 나노 입자를 합성하였다. 용매로 Oleylamine을 사용하였는데, $260{\sim}340^{\circ}C$의 온도 범위에서 5시간 30분 동안 CZTS 나노입자를 합성하였고, $300^{\circ}C$에서 5시간 30분~9시간까지 합성하였다. 헥산을 이용하여 원심분리기와 초음파세척기로 용매인 Oleylamine을 제거하였고, 진공오븐에서 건조된 CZTS 분말의 FE-SEM (Field Emission Scanning Electron Microscope), XRD (X-Ray Diffraction), EDS (Energy Dispersive Spectroscopy) 분석 등을 통해 합성온도에 따른 구조적, 화학적 조성 변화를 조사하였다.

• Progress in Superconductivity and Cryogenics
• /
• v.20 no.4
• /
• pp.36-40
• /
• 2018

In this study, the electromechanical properties in Sn-Cu double layer stabilized GdBCO coated conductor (CC) tapes with and without external lamination under uniaxial tension were examined at 77 K and self-field. Their irreversible stress and strain limits were determined using a loading-unloading scheme based on different critical current ($I_c$) recovery criteria. The repeated tests were performed and statistical estimation was done to check the reproducibility depending on the criterion adopted in evaluating the electromechanical properties. From the results, it showed that the Sn-Cu double-layer stabilized CC tapes have the higher irreversible stress limit, but lower irreversible strain limit as compared to brass laminated ones. Through the repeated tests, it can be found that a small scattering of irreversible limits existed in both CC tape samples. Finally, similar strain sensitivity of $I_c$ in both CC tapes was obtained.

• Journal of the Korean Physical Society
• /
• v.73 no.9
• /
• pp.1370-1376
• /
• 2018

The electronic structures, magnetic properties and half-metallicity in $Zr_2RuZ$ (Z = Ga, In, Tl, Ge, Sn, and Pb) alloys with $AlCu_2Mn-$ and $CuHg_2Ti$-type structures were investigated using first-principles density functional theory (DFT) calculations. The calculations showed that $Zr_2RuIn$, $Zr_2RuTl$, $Zr_2RuSn$, and $Zr_2RuPb$ compounds with $CuHg_2Ti$-type structures were half-metallic ferromagnets with half-metallic band gaps of 0.18, 0.24, 0.22, and 0.27 eV, respectively. The half-metallicity originated from d-d and covalent hybridizations between the transition metals Zr and Ru. The total magnetic moments of the $Zr_2RuZ$ (Z = In, Tl, Sn, and Pb) compounds with $CuHg_2Ti$-type structures were integer values of $1{\mu}B$ and $2{\mu}B$, which is in agreement with Slater-Pauling rule ($M_{tot}=Z_{tot}-18$). Among these compounds, $Zr_2RuIn$ and $Zr_2RuTl$ were half-metals over relatively wide regions of the lattice constants, indicating that these two new Heusler alloys are ideal candidates for use in spintronic devices.

• Journal of the Microelectronics and Packaging Society
• /
• v.22 no.3
• /
• pp.25-30
• /
• 2015

SAC-coated Cu specimens were fabricated by novel pad finish process using a phenomenon that metal nanoparticles less than 20 nm in diameter melted at a temperature lower than the melting point of bulk metal, and their wettabilities were evaluated. The thickness of SAC305 layer coated at low temperature of $160^{\circ}C$ using SAC305 ink was extremely thin as the level of several nanometers. It was analyzed by Auger electron spectroscopy that $Cu_6Sn_5$ intermetallic layer with a thickness of 10~100 nm and $Cu_3Sn$ intermetallic layer with a thickness of 50~150 nm were sequentially formed under the SAC305 coating layer. The thickness of formed intermetallic layers was thicker in electroplated Cu than rolled Cu, which attributed to improved surface roughness in the electroplated Cu. The improved surface roughness induces the contact, melting, and reaction of a larger number of SAC305 nanoparticles per the unit area of Cu specimen. In the wetting angle test using SAC305 solder balls, the Cu coated with SAC305 through the low temperature process presented evidently low wetting angles than those in non-coated Cu, indicating that only a few nanometer-thick SAC305 coating layer on Cu could also cause the enhancement of wettability.

• Advances in materials Research
• /
• v.2 no.4
• /
• pp.221-235
• /
• 2013

To obtain bronze with good mechanical properties and high wear resistance, a new bronze (CADZ) is proposed on the basis of various fundamental information. The CADZ consists of the elements Al10.5, Fe4.2, Sn3.7 and Ni3.1, and its design is based on Cu-Al10.5 alloy. The Cu-10.5%Al is very hard and brittle. To obtain the high material ductility of the Cu-10.5%Al alloy, an attempt was made to add a few percent of Sn. Moreover, to make high strength of the Cu alloy, microstructure with small grains was created by the proper amount of Fe and Ni (Fe/Ni = 0.89). The mechanical properties of the CADZ sample have been examined experimentally, and those were compared with commercial bronzes. The tensile strength and wear resistance of CADZ are higher than those for commercial bronzes. Although the ductility of CADZ is the lower level, the strain to failure of CADZ is about 2.0~5.0% higher than that for the Cu-Al10.5 alloy. Details of the microstructural effects on the mechanical properties in the CADZ sample were further discussed using various experimental results.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2012.10a
• /
• pp.469-470
• /
• 2012

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2006.04a
• /
• pp.70-71
• /
• 2006

• Journal of the Microelectronics and Packaging Society
• /
• v.16 no.4
• /
• pp.23-28
• /
• 2009

We investigated the wafer-level MEMS capping process for which cavity formation in Si wafer was not required. Ni caps were formed by electrodeposition on 4" Si wafer and Ni rims of the Ni caps were bonded to the Cu rims of bottom Si wafer by using epoxy. Then, top Si wafer was debonded from the Ni cap structures by using SnBi layer of low melting temperature. As-evaporated SnBi layer was composed of double layers of Bi and Sn due to the large difference in vapor pressures of Bi and Sn. With keeping the as-evaporated SnBi layer at $150^{\circ}C$ for more than 15 sec, SnBi alloy composed of eutectic phase and Bi-rich $\beta$ phase was formed by interdiffusion of Sn and Bi. Debonding between top Si wafer and Ni cap structures was accomplished by melting of the SnBi layer at $150^{\circ}C$.