• Title/Summary/Keyword: CuSn

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Tensile Properties of Powder Metallurgy Processed PM Cu-7.5Ni-5Sn Alloy with Different Heat Treatment Conditions (분말야금법으로 제조된 Cu-7.5Ni-5Sn 합금의 열처리 조건에 따른 기계적 특성의 변화)

  • Ryu, Jae-Cheol;Kim, Sang-Sik;Han, Seung-Jeon;Kim, Chang-Ju
    • Korean Journal of Materials Research
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    • v.9 no.9
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    • pp.905-912
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    • 1999
  • Tensile properties of powder metallurgy (PM) processed Cu-7.5Ni-5Sn alloys, either as-received or additionally solution heat treated, were examined as a function of aging time. It was found that the as-received Cu-7.5Ni-5Sn alloys showed an abrupt increase in tensile strength after aging at $350^{\circ}C$ for 20 minutes, due to the metastable ${\gamma}$\\` precipitation and a marginal Spinodal decomposition. The resolutionized PM Cu-7.5Ni-5Sn alloys, on the other hand, showed a gradual increase in tensile strength from the very early stage of aging. The overall tensile strength of resolutionized PM Cu-7.5Ni-5Sn alloys, however, was lower than that of the as-received and aged counterparts, due to the grain growth during resolutionization. Afterprolonged aging for the as-received PM Cu-7.5Ni-5Sn alloys, a considerable amount of discontinuous precipitates formed along the grain boundaries. The formation and growth kinetics of such discontinuous precipitates appeared to be dependent on the heat treatment conditions, and affect the mechanical properties greatly.

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The Properties and Processing of Bismuth and Indium Added Sn-Cu-Ni Solder Alloy System (Bi, In을 함유한 Sn-Cu-Ni계 솔더 합금 제조와 물성)

  • 박종원;최정철;최승철
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.1
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    • pp.21-28
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    • 2002
  • Bismuth and Indium added Sn-Cu-Ni solder alloy was investigated for a new lead free solder. The thermal, electrical and mechanical properties were characterized for the Sn-0.7%(Cu+Ni) solder alloy by adding 2~5% Bi and 2~ 10% In. The melting point of solder alloy was in range of 200 to $222^{\circ}C$ and the mushy zone was in range of 20 to $37^{\circ}C$. This alloys could be adapted to middle and high temperature solder materials. A new solder alloy composition. Sn-0.7%(Cu+Ni) -3.5%Bi-2%In is very promising with high performance and effective cost. The melting point was $220^{\circ}C$, the mushy zone range was $25^{\circ}C$, and mechanical, electrical and wetting properties were competitive with those of other lead-free solder except the lower elongation value.

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Development of the Copper Core Balls Electroplated with the Solder of Sn-Ag-Cu

  • Imae, Shinya;Sugitani, Yuji;Nishida, Motonori;kajita, Osamu;Takeuchi, Takao
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1207-1208
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    • 2006
  • We developed the copper core ball electroplated with Sn-Ag-Cu of the eutectic composition which used mostly as Pb free solder ball with high reliability. In order to search for the practicality of this developed copper core ball, the evaluation was executed by measuring the initial joint strength of the sample mounted on the substrate and reflowed and by measuring the joint strength of the sample after the high temperature leaving test and the constant temperature and the humidity leaving test. This evaluation was compered with those of the usual other copper core balls electroplated with (Sn,Sn-Ag,Sn-Cu,Sn-Bi) and the Sn-Ag-Cu solder ball.

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Microstructure and Wear Properties of Squeeze Cast Carbon Fiber/Copper Alloy Metal Matrix Composite (탄소섬유 강화 Cu 기지 금속 복합재료의 Squeeze Cast 조직 및 내마멸특성)

  • Kim, Nam-Soo;Chi, Dong-Chul;Cho, Kyung-Mok;Park, Ik-Min
    • Journal of Korea Foundry Society
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    • v.12 no.3
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    • pp.238-247
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    • 1992
  • A carbon fiber(CF) reinforced Cu-10%Sn alloy matrix composite was successfully fabricated by squeeze casting method employing preheated graphite mold and proper process controlling factors. The matrix solidification microstructure of the Cu-10%Sn/CF composite reveals ${\alpha}-dendrite$ and ${\alpha}+{\delta}$ eutectoid. To compare the squeeze cast Cu-10%Sn/CF compostie with PM route fabricated Cu-graphite composites for electric contact material, mechanical wear and electrical arc wear tests were performed. Mechanical wear rate of the Cu-10%Sn/CF is much lower than that of the Cu-graphite composite. Weight loss with a variation of contact number in electrical arc wear tests shows a similar trend between the squeeze cast Cu-10%Sn/CF and PM Cu-graphite composites.

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Retarding Effect of Transferred Graphene Layers on Intermetallic Compound Growth at The Interface between A Substrate and Pb-free Solder (기판과 무연솔더 계면에 전사된 그래핀 층의 금속간화합물 성장 지연 효과)

  • Yong-Ho Ko;Dong-Yurl Yu
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.3
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    • pp.64-72
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    • 2023
  • In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu6Sn5 and Cu3Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu6Sn5 and Cu3Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.

Characteristics of CuO doped WO3-SnO2 Thick Film Gas Sensors (CuO가 첨가된 WO3-SnO2 후막 가스센서 특성 연구)

  • Lee, Don-Kyu;Shin, Deuck-Jin;Yu, Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.956-960
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    • 2010
  • CuO doped $WO_3-SnO_2$ thick film gas sensors were fabricated by screen printing method on alumina substrates and heat-treated at $350^{\circ}C$ in air. The effects of mixing ratio of $WO_3$ with $SnO_2$ on the structural and morphological properties of $WO_3-SnO_2$ were investigated X-ray diffraction and Scanning Electron Microscope. The structural properties of the $WO_3-SnO_2$:CuO thick film by XRD showed that the monoclinic of $WO_3$ and the tetragonal of $SnO_2$ phase were mixed. Nano CuO was coated on the $WO_3-SnO_2$ surface and then the surface of $WO_3$ was coated with $SnO_2$ particles with $1\sim1.5{\mu}m$ in diameters, as confirmed form the SEM image. The sensitivity of the $WO_3-SnO_2$:CuO sensor to 2000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas for the various ratio of $WO_3$ and $SnO_2$ was investigated. The 4 wt% CuO doped $WO_3-SnO_2$(75:25) tkick films showed the highest sensitivity to $CO_2$ gas and $H_2S$ gas.

Syntheses of Cu2SnSe3 and Their Transformation into Cu2ZnSnSe4 Nanoparticles with Tunable Band Gap under Multibubble Sonoluminescence Conditions

  • Park, Jongpil;Lee, Won Young;Hwang, Cha Hwan;Kim, Hanggeun;Kim, Youngkwon;Shim, Il-Wun
    • Bulletin of the Korean Chemical Society
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    • v.35 no.8
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    • pp.2331-2334
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    • 2014
  • $Cu_2SnSe_3$ (CTSe) and $Cu_2ZnSnSe_4$ (CZTSe) nanoparticles were synthesized by sonochemical reactions under multibubble sonoluminescence (MBSL) conditions. First, $Cu_2SnSe_3$ nanoparticles were synthesized by the sonochemical method with an 85% yield, using CuCl, $SnCl_2$, and Se. Second, ZnSe was coated on the CTSe nanoparticles by the same method. Then, they were transformed into CZTSe nanoparticles of 5-7 nm diameters by heating them at $500^{\circ}C$ for 1 h. The ratios between Zn and Sn could be controlled from 1 to 3.75 by adjusting the relative concentrations of CTSe and ZnSe. With relatively lower Zn:Sn ratios (0.75-1.26), there are mostly CZTSe nanoparticles but they are believed to include very small amount of CTS and ZnSe particles. The prepared nanoparticles show different band gaps from 1.36 to 1.47 eV depending on the Zn/Sn ratios. In this sonochemical method without using any toxic or high temperature solvents, the specific stoichiometric element Zn/Sn ratios in CZTSe were controllable on demand and their experimental results were always reproducible in separate syntheses. The CZTSe nanoparticles were investigated by using X-ray diffractometer, a UV-Vis spectrophotometer, scanning electron microscope, Raman spectroscopy, and a high resolution-transmission electron microscope.

Interfacial Reaction and Mechanical Property of BGA Solder Joints with LTCC Substrate (LTCC기판과 BGA 솔더접합부의 계면반응 및 기계적 특성)

  • Yoo, Choong-Sik;Ha, Sang-Su;Kim, Bae-Kyun;Jang, Jin-Kyu;Seo, Won-Chan;Jung, Seung-Boo
    • Korean Journal of Metals and Materials
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    • v.47 no.3
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    • pp.202-208
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    • 2009
  • The effects of aging time on the microstructure and shear strength of the Low Temperature Co-fired Ceramic (LTCC)/Ag pad/Electroless Nickel Immersion Gold (ENIG)/BGA solder joints were investigated through isothermal aging at $150^{\circ}C$ for 1000 h with conventional Sn-37Pb and Sn-3Ag-0.5Cu. $Ni_3Sn_4$ intermetallic compound (IMC) layers was formed at the interface between Sn-37Pb solder and LTCC substrate as-reflowed state, while $(Ni,Cu)_3Sn_4$ IMC layer was formed between Sn-3Ag-0.5Cu solder and LTCC substrate. Additional $(Cu,Ni)_6Sn_5$ layer was found at the interface between the $(Ni,Cu)_3Sn_4$ layer and Sn-3Ag-0.5Cu solder after aging at $150^{\circ}C$ for 500 h. Thickness of the IMC layers increased and coarsened with increasing aging time. Shear strength of both solder joints increased with increasing aging time. Failure mode of BGA solder joints with LTCC substrate after shear testing revealed that shear strength of the joints depended on the adhesion between Ag metallization and LTCC. Fracture mechanism of Sn-37Pb solder joint was a mixture of ductile and pad lift, while that of Sn-3Ag-0.5Cu solder joint was a mixture of ductile and brittle $(Ni,Cu)_3Sn_4$ IMC fracture morphology. Failure mechanisms of LTCC/Ag pad/ENIG/BGA solder joints were also interpreted by finite element analyses.

Electromigration Behavior of the Flip-Chip Bonded Sn-3.5Ag-0.5Cu Solder Bumps (플립칩 본딩된 Sn-3.5Ag-0.5Cu 솔더범프의 electromigration 거동)

  • Choi Jae-Hoon;Jun Sung-Woo;Won Hae-Jin;Jung Boo-Yang;Oh Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.4 s.33
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    • pp.43-48
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    • 2004
  • Electromigration of Sn-3.5Ag-0.5Cu solder bumps was investigated with current densities of $3{\~}4{\times}10^4 A/cm^2$ at temperatures of $130{\~}160^{\circ}C$ using flip chip specimens which consisted of upper Si chip and lower Si substrate. Electromigration failure of the Sn-3.5Ag-0.5Cu solder bump occurred with complete consumption of Cu UBM and void formation at cathode side of the solder bump. The activation energies for electromigration of the Sn-3.5Ag-0.5Cu solder bump were measured as 0.61 eV at current density of $3{\times}10^4 A/cm^2$, 0.63 eV at $3.5{\times}10^4 A/cm^2$, and 0.77 eV at $4{\times}10^4 A/cm^2$, respectively.

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Structure and Growth of Tin Whisker on Leadframe with Lead-free Solder Finish (무연솔더 도금된 리드프레임에서 Sn 위스커의 성장과 구조)

  • Kim Kyung-Seob;Leem Young-Min;Yu Chong-Hee
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.3 s.32
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    • pp.1-7
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    • 2004
  • Tin plating on component finishes may grow whiskers under certain conditions, which may cause failures in electronics equipment. To protect the environment, 'lead-free' among component finishes is being promoted worldwide. This paper presents the evaluation results of whiskers on two kinds of lead-free plating materials at the plating temperature and under the reliability test. The rising plating temperature caused increasing the size of plating grain and shorting the growth of whisker. The whisker was grown under the temperature cycling the bent type in matt Sn plating and striated type in malt Sn-Bi. The whisker growth in Sn-Bi plating was shorter than that in Sn plating. In FeNi42 leadframe, the $7.0{\~}10.0{\mu}m$ diameter and the $25.0{\~}45.0{\mu}m$ long whisker was grown under 300 cycles. In the 300 cycles of Cu leadframe, only the nodule(nuclear state) grew on the surface, and in the 600 cycles, a $3.0{\~}4.0{\mu}m$ short whisker grew. After 600 cycles, the ${\~}0.34{\mu}m$ thin $Ni_3Sn_4$ formed on the Sn-plated FeNi42. However, we observed the amount of $0.76{\~}1.14{\mu}m$ thick $Cu_6Sn_5$ and ${\~}0.27{\mu}m$ thin $Cu_3Sn$ intermetallics were observed between the Sn and Cu interfaces. Therefore, the main growth factor of a whisker is the intermetallic compound in the Cu leadframe, and the coefficient of thermal expansion mismatch in FeNi42.

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