• Bulletin of the Korean Chemical Society
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• 제35권10호
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• pp.3025-3029
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• 2014

To realize copper-based electrode materials for printed electronics applications, it is necessary to improve the adhesion strength between conductive lines and the substrate. Here, we report the preparation of Cu pastes using (3-glycidoxypropyl) trimethoxysilane (GPTMS) prepolymer as an adhesion promoter (AP). The Cu pastes were screen-printed on glass and polyimide (PI) substrates and sintered at high temperatures (> $250^{\circ}C$) under a formic acid/$N_2$ environment. According to the adhesion strengths and electrical conductivities of the sintered Cu films, the optimized Cu paste was composed of 1.0 wt % GPTMS prepolymer, 83.6 wt % Cu powder and 15.4 wt % vehicle. After sintering at $400^{\circ}C$ on a glass substrate and $275^{\circ}C$ on a PI substrate, the Cu films showed the sheet resistances of $10.0m{\Omega}/sq$. and $5.2m{\Omega}/sq$., respectively. Furthermore, the sintered Cu films exhibit excellent adhesion properties according to the results of the ASTM-D3359 standard test.

• 한국자기학회지
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• 제17권5호
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• pp.198-204
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• 2007

비정질 FeCuNbSiB 리본 합금의 파쇄분말을 $1{\sim}3\;{\mu}m$의 두께로 편상화한 다음, $375{\sim}525^{\circ}C$의 온도범위에서 1 h 동안 열처리한 후 폴리머 중에 분산시켜 준마이크로파 대역의 전자파 노이즈 억제용 복합 시트를 제조하였다. 이 때 어닐링 온도가 복합 시트의 전자파 전송손실(전력손실)에 미치는 영향을 조사한 결과, $425{\sim}475^{\circ}C$에서 열처리하여 부분 나노결정 구조를 얻었을 때 가장 높은 전력손실 값을 나타내었으며, ${\alpha}-Fe$상으로 결정화 정도를 더 높여 보다 우수한 연자성을 얻게 되는 $525^{\circ}C$에서의 열처리에 의해서는 오히려 전력손실 특성이 저하되었다. 이와 같은 전자파 흡수 특성의 어닐링 온도 의존성은 각각 $425{\sim}475^{\circ}C$에서 나타나는 높은 복소 투자율의 허수항(${\mu}"$) 및 $525^{\circ}C$에서의 큰 투과 파라미터($S_{21}$)에 그 주된 원인이 있는 것으로 판단되었다. 한편 열처리하지 않은 비정질 상태에서는 ${\mu}"$ 값이 작아 매우 낮은 전력손실을 나타내었다.

• 한국재료학회지
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• 제5권2호
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• pp.169-177
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• 1995

Cu와 Si사이의 확산방지막으로 1000$\AA$ 두께의 TiN의 특성에 대하여 면저항 측정, 식각패임자국 관찰, X선 회절, AES, TEM 등을 이용하여 조사하였다. TiN 확산방지막은 $550^{\circ}C$, 1시간의 열처리 후에 Cu의 안쪽 확산으로 인해 Si(111)면을 따라 결정결함(전위)을 형성하고, 전위 주위에 Cu 실리사이드로 보이는 석출물들을 형성함으로써 파괴되었다. Al의 경우와는 달리 Si 패임자국이 형성되지 안흔 것으로부터 TiN확산방지막의 파괴는 Cu의 안쪽 확산에 의해서만 일어나는 것을 알 수 있었다. 또한, Al의 경우에는 우수한 확산방지막 특성을 보여주었던 충진처리된 TiN가 Cu의 경우에는 거의 효과가 없는 것을 알 수 있었다. 이것은 Al의 경우에는 TiN의 결정립계에 존재하는 $TiO_{2}$가 Al과 반응하여 $Al_{2}O_{3}$를 형성함으로써 Al의 확산을 방해하는 화학적 효과가 매우 크지만, Cu의 경우에는 CuO 또는 $Cu_{2}O$와 같은 Cu 산화물은$TiO_{2}$에 비해서 열역학적으로 불안정하기 때문에 이러한 화학적 효과를 기대할 수 없으며, 따라서 충진처리 효과가 거의 없는 것으로 이해된다.

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2158-2162
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• 2010

Studies on the molecular construction and structures of $M(NO_3)_2$ (M = Cu(II), Ni(II)) complexes with 1,2-bis(dimethyl-3-pyridylsilyl)ethane (L) have been carried out. Formation of each molecular skeleton appears to be primarily associated with a suitable combination of bidentate N-donors of L and coordinating nature of octahedral metal(II) ions: [$Cu(NO_3)_2(L)_2$] yields a 2-dimensional sheet structure consisting of 44-membered $Cu_4L_4$ skeleton whereas $[Ni(L)_2(H_2O)_2](NO_3)_2$ produces an interpenetrated 3-dimensional structure consisting of 66-membered cyclohexanoid ($M_6L_6$) skeleton. The Cu(II) ion prefers nitrate whereas the Ni(II) ion prefers water molecules as the fifth and the sixth ligands.

• Journal of Magnetics
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• 제14권4호
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• pp.155-160
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• 2009

This study examined the effects of a decrease in thickness of magnetic alloy flakes on the electromagnetic wave absorption characteristics of nanocrystalline $Fe_{73.5}Cu_1Nb_3Si_{15.5}B_7$ (at.%) alloy flakes/polymer composite sheets available for a quasi-microwave band. The thickness of FeCuNbSiB alloy flakes decreased to 1-2 $\mu$m with increasing milling time up to 24 h, and the composite sheet including alloy flakes milled for 24 h exhibited considerably enhanced power loss properties in the GHz range compared to the sheets having non-milled alloy powders. Although a considerable increase in loss factor upon milling was observed in the narrow frequency range of 4-6 GHz, there was no correlation between the complex permeability and flake thickness. However, the complex permittivity increased with increasing milling time, and there was good agreement between the milling time and the frequency dependences of the complex permittivity and power loss.

• 센서학회지
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• 제13권3호
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• pp.195-198
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• 2004

For a diffusion barrier against copper, tantalum nitride films have been deposited on $SiO_{2}$ by atomic layer deposition (ALD), using PEMAT(Pentakis(ethylmethylamino)tantalum) and $NH_{3}$ as precursors, Ar as purging gas. The deposition rate of TaN at substrate temperature $250^{\circ}C$ was about $0.67{\AA}$ per one cycle. The stability of TaN films as a Cu diffsion barrier was tested by thermal annealing for 30 minutes in $N_{2}$ ambient and characterized through XRD, sheet resistance, and C-V measurement(Cu($1000{\AA}$)/TaN($50{\AA}$)/$SiO_{2}$($2000{\AA}$)/Si capacitor fabricated), which prove the TaN film maintains the barrier properties Cu below $400^{\circ}C$.

• 한국재료학회지
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• 제19권8호
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• pp.432-436
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• 2009

A Cu-Fe-P copper alloy was processed by accumulative roll-bonding (ARB) for ultra grain refinement and high strengthening. Two 1mm thick copper sheets, 30 mm wide and 300 mm long, were first degreased and wire-brushed for sound bonding. The sheets were then stacked on top of each other and roll-bonded by about 50% reduction rolling without lubrication at ambient temperature. The bonded sheet was then cut into two pieces of the same dimensions and the same procedure was repeated for the sheets up to eight cycles. Microstructural evolution of the copper alloy with the number of the ARB cycles was investigated by optical microscopy (OM), transmission electron microscopy(TEM), and electron back scatter diffraction(EBSD). The grain size decreased gradually with the number of ARB cycles, and was reduced to 290 nm after eight cycles. The boundaries above 60% of ultrafine grains formed exhibited high angle boundaries above 15 degrees. In addition, the average misorientation angle of ultrafine grains was 30 degrees.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.150-155
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• 2004

This study attempts to form a TiN barrier layer against Cu diffusion by the easier and more convenient method. In this new approach, Ti was sputter-deposited, and nitrided by heat-treating in the NH$_3$ambient. Sheet resistance of as-deposited Ti was 20 Ω/$\square$, but increased to 195 Ω/$\square$ after the heat-treatment at 30$0^{\circ}C$, and lowered to 120 Ω/$\square$ after the heat-treatment at 50$0^{\circ}C$, and $600^{\circ}C$. AES results for these thin films confirmed that the atomic ratio of Ti and N was close to 1:1 at or above 40$0^{\circ}C$ heat-treatment. However, it was also found that excessive oxygen was contained in the TiN layer. To examine the barrier property against Cu diffusion, 100nm Cu was deposited on the TiN layer and then annealed at 40$0^{\circ}C$ for 40 min.. Cu remained at the surface without diffusing into the Si layer.

• 한국표면공학회지
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• 제5권3호
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• pp.77-85
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• 1972

A method of preparation of synthetic ignorgaic coating on copper (patina) has been presented . An Eh--pH diagram was constructed for the present Cu-H2O-SO$_4$ system using the most recently available thermodynamic data. In the path of the patination at room temperature the general behaviour of copper in acidic copper sulfate solutions with potassium chlorate as an oxidizing agent appeared to follow those predictable in this Eh-pH diagram. In the presence 0.05 molar cupric sulfate at a temperature of about 28$^{\circ}C$ a green brochantite (CuSO$_4$$.$3Cu(OH)$_2$) layer was formed on copper sheet in 20 days. In a solution having an initial pH of 3.5 the development of a brochantite coating has been observed to take place in two stages. In the first, a layer of cuprous oxide formed on the copper at a relatively rapid rate. In the ensuing step the outer layer of cuptrite was oxidized at much slower rate to form brochantite. The syntetic coatings appeared to consist of crystal-lites of brochanitite growing perpendicular to the cuprose oxide surface. The outer tips of the -crystallites were reasily broken off and gave to the layer a rather chalky character. Underneath, at the brochantite Cu$_2$O interface, however, the green layers were firmely attached. The effect of reagent concentration , solution agitation , and moderate temperature increase were investigated to improve the quality of coating. So also in a qualitative way were the effect of light.

• 한국재료학회지
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• 제29권4호
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• pp.228-232
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• 2019

Copper electroplating and electrode patterning using a screen printer are applied instead of lithography for heterostructure with intrinsic thin layer(HIT) silicon solar cells. Samples are patterned on an indium tin oxide(ITO) layer using polymer resist printing. After polymer resist patterning, a Ni seed layer is deposited by sputtering. A Cu electrode is electroplated in a Cu bath consisting of $Cu_2SO_4$ and $H_2SO_4$ at a current density of $10mA/cm^2$. Copper electroplating electrodes using a screen printer are successfully implemented to a line width of about $80{\mu}m$. The contact resistance of the copper electrode is $0.89m{\Omega}{\cdot}cm^2$, measured using the transmission line method(TLM), and the sheet resistance of the copper electrode and ITO are $1{\Omega}/{\square}$ and $40{\Omega}/{\square}$, respectively. In this paper, a screen printer is used to form a solar cell electrode pattern, and a copper electrode is formed by electroplating instead of using a silver electrode to fabricate an efficient solar cell electrode at low cost.