• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.64-72
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• 2023

In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu₆Sn₅ and Cu₃Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu₆Sn₅ and Cu₃Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.

• Korean Journal of Metals and Materials
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• v.47 no.8
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• pp.500-507
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• 2009

Pb-free solder has recently been used in electronics in efforts to meet environmental regulations, and a number of Pb-free solder alloy choices beyond the near-eutectic SnAgCu solder are now available. With increased demand for thin and portable electronics, the high cost of alloys containing significant amounts of silver and their poor mechanical shock performance have spurred the development of low Ag SnAgCu solder, which provides improved mechanical performance at a reasonable cost. Although low Ag SnAgCu solder exhibits significantly higher fracture resistance under high-strain rates, little thermal fatigue data exist for this solder. Therefore, it is necessary to investigate thermal fatigue reliability of low Ag SnAgCu solder under variation of thermal stress in order to allow its implementation in electronic products with high reliability requirements. In this study, the reliability of Sn0.3Ag0.7Cu(SAC0307), a low Ag solder alloy, is discussed and compared with that of Sn3Ag0.5Cu(SAC305). Three sample types and six samples size are evaluated. Mechanical properties and microstructure of the solder joint are investigated under thermal shock cycles. It was observed that the mechanical strength of SAC0307 dropped slightly with thermal cycling relative to that of SAC305. This reveals that the failure mode of SAC0307 is different from that SAC305 under this critical condition.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.53-57
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• 2013

Although the lowering of Ag content in Sn-3.0Ag-0.5Cu is known to improve the mechanical shock reliability of the solder joint, it is also known to be detrimental to the solderbility. In this study, the quaternary alloying effect of In and the minor alloying effects of Mn and Pd on the solderability, thermal cycling and mechanical shock reliabilities of the low Ag content Sn-1.2Ag-0.7Cu solder were investigated using board-level BGA packages. The solderability of Sn-1.2Ag-0.7Cu-0.4In was proved to be comparable to that of Sn-3.0Ag-0.5Cu but its thermal cycling reliability was inferior to that of Sn-3.0Ag-0.5Cu. While the 0.03 wt% Pd addition to the Sn-1.2Ag-0.7Cu-0.4In decreased the solderability and reliabilities of solder joint, the 0.1 wt% Mn addition was proved to be beneficial especially for the mechanical shock reliability compared to those of Sn-3.0Ag-0.5Cu and Sn-1.0Ag-0.5Cu compositions. It was considered to be due that the Mn addition decreased the Young's modulus of low Ag content Pb-free solders.

• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.243-248
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• 2018

All solid state thin film batteries with two types of cell structure, Pt / $LiCoO_2$ / LiPON / Cu and Pt / $LiCoO_2$ / LiPON / $LiCoO_2$ / Cu, are prepared and their electrochemical performances are investigated to evaluate the effect of $LiCoO_2$ interlayer at the interface of LiPON / Cu. The crystallinity of the deposited $LiCoO_2$ thin films is confirmed by XRD and Raman analysis. The crystalline $LiCoO_2$ cathode thin film is obtained and $LiCoO_2$ as the interlayer appears to be amorphous. The surface morphology of Cu current collector after cycling of the batteries is observed by AFM. The presence of a 10 nm-thick layer of $LiCoO_2$ at the interface of LiPON / Cu enhances the interfacial adhesion and reduces the interfacial resistance. As a result, Li plating / stripping at the interface of LiPON / Cu during charge/discharge reaction takes place more uniformly on Cu current collector, while without the interlayer of $LiCoO_2$ at the interface of LiPON / Cu, the Li plating / stripping is localized on current collector. The thin film batteries with the interlayer of $LiCoO_2$ at the interface of LiPON / Cu exhibits enhanced initial coulombic efficiency, reversible capacity and cycling stability. The thickness of the anode current collector Cu also appears to be crucial for electrochemical performances of all solid state thin film batteries.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.47-53
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• 2000

The fluxless wetting properties of TSM-coated glass substrate were evaluated by the wetting balance method. We could estimate the wettability of the TSM with new parameters obtained from the wetting balance test for one side-coated specimen. It was more effective in wetting to use Cu as a wetting layer and Au as a protection layer than to use Au itself as a wetting layer. The SnSb solder showed better wettability than SnAg, SnBi, and SnIn solders. The contact angle of the one side-coated glass substrate to the Pb-free solders could be calculated from the farce balance equation by measuring the static force and the tilt angle.

• Journal of Welding and Joining
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• v.35 no.3
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• pp.21-27
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• 2017

A soldering temperature of ($235{\pm}3$) $^{\circ}C$ is described in ISO 9455-15 for the copper corrosion test. However, this temperature is not suitable for performing lead-free solder pastes. We evaluated the compatibility of a lead-free solder paste in the experimental conditions of (Liquidus temperature + ($35{\pm}3$)) $^{\circ}C$. Based on the results after a Cu corrosion test, a proper temperature for Pb-free soldering was (melting point+($35{\pm}3$)) $^{\circ}C$. Criteria used to evaluate corrosion due to discoloration of flux residue is described in ISO 9455-15, but a more quantitative evaluation standard is needed. In this study, experimental error level was estimated by analyzing flux residue after a corrosion test for 72, 500 hours of specimens using EDS analysis with acceleration voltage. It was determined that the copper area at the flux residue boundary is suitable for the EDS analysis area.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.210-214
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• 2002

The crystallization behavior of amorphous silicon (a-Si) film was investigated by using Cu-field aided lateral crystallization (Cu-FALC) process below $450^{\circ}C$. The lateral crystallization was induced from the Cu deposited region outside of pattern toward the Cu-free region inside of the pattern by applying an electric field during heat treatment. As expected, the lateral crystallization toward Cu-free region proceeded from negative toward positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species in the reaction between Cu and Si. Even at the annealing temperature of $350^{\circ}C$, the large dendrite-shaped branches were formed in the crystallized region and the polarity in the lateral crystallization was clearly observed. Consequently, we could successfully crystallize the a-Si at the temperature as low as $350^{\circ}C$ by an electric field of 30 V/cm with fast crystallization velocity of 12 $\mu$m/h.

• Journal of Welding and Joining
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• v.20 no.2
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• pp.77-81
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• 2002

Many kinds of Pb-free solder have been investigated because of the environmental concerns. Sn-Ag-Cu system is well blown as most competitive Pb-free solder. However, since Sn-Ag-Cu system has relatively high melting point compared to Sn-Pb eutectic, it may a limitation, the some application. In this study, Bi and In contained solder of $Sn_3Ag_8Bi_5In$ which has relatively lower melting point, $188~204^{\circ}C$, was investigated. $Sn_3Ag_8Bi_5In$ solder ball of $500\mu\textrm{m}$ diameter was set on the Ni/Cu/Cr-UBM and reflow soldered in the range of $220~240^{\circ}C$ for 5~15s. The maximum shear strength of the solder ball was around 170mN by reflowing at $240^{\circ}C$ for 10s. Intermetallic compound formed on the UBM of Si-wafer was analysed by SEM(scanning electron microscope) and XRD(X-ray diffractometer).

• New & Renewable Energy
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• v.3 no.4
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• pp.54-62
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• 2007

In this paper, we report the research highlight on the preparation and characterization of Indium-free $Cu_2ZnSnSe_4$ and Indium-reduced $CulnZnSe_2$ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ films were found to exhibit a high absorption coefficient of $104^4cm^{-1}\;Cu_2ZnSnSe_4$ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the $CulnZnSe_2$ film. All films in this study revealed a p-type semiconductor characteristic.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.1-7
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• 2004

Tin plating on component finishes may grow whiskers under certain conditions, which may cause failures in electronics equipment. To protect the environment, 'lead-free' among component finishes is being promoted worldwide. This paper presents the evaluation results of whiskers on two kinds of lead-free plating materials at the plating temperature and under the reliability test. The rising plating temperature caused increasing the size of plating grain and shorting the growth of whisker. The whisker was grown under the temperature cycling the bent type in matt Sn plating and striated type in malt Sn-Bi. The whisker growth in Sn-Bi plating was shorter than that in Sn plating. In FeNi42 leadframe, the $7.0{\~}10.0{\mu}m$ diameter and the $25.0{\~}45.0{\mu}m$ long whisker was grown under 300 cycles. In the 300 cycles of Cu leadframe, only the nodule(nuclear state) grew on the surface, and in the 600 cycles, a $3.0{\~}4.0{\mu}m$ short whisker grew. After 600 cycles, the ${\~}0.34{\mu}m$ thin $Ni_3Sn_4$ formed on the Sn-plated FeNi42. However, we observed the amount of $0.76{\~}1.14{\mu}m$ thick $Cu_6Sn_5$ and ${\~}0.27{\mu}m$ thin $Cu_3Sn$ intermetallics were observed between the Sn and Cu interfaces. Therefore, the main growth factor of a whisker is the intermetallic compound in the Cu leadframe, and the coefficient of thermal expansion mismatch in FeNi42.