• Transactions of Materials Processing
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• v.13 no.7
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• pp.623-628
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• 2004

This paper is concerned with pressure welding, which has been known as a main bonding mechanism during the cold and warm forming such as clad extrusion or bundle extrusion/drawing. Bonding characteristics between the Cu and Al plates by pressure welding are investigated focusing on the weak bonding. Experiments are performed at the cold and warm temperatures ranging from the room temperature to $200^{\circ}C$. The important factors examined in this work are the welding pressure, pressure holding time, surface roughness, and temperature. A bonding map, which can identify the bonding criterion with a weak bonding strength of IMPa , is proposed in terms of welding pressure and surface roughness fur the cold and warm temperature ranges.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.75-81
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• 2018

The effect of $Ar-N_2$ plasma treatment on Cu surface as one of solutions to realize reliable Cu-Cu wafer bonding was investigated. Structural characteristic of $Ar-N_2$ plasma treated Cu surface were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope. Ar gas was used for a plasma ignition and to activate Cu surface by ion bombardment, and $N_2$ gas was used to protect the Cu surface from contamination such as -O or -OH by forming a passivation layer. The Cu specimen under high Ar partial pressure plasma treatment showed more copper oxide due to the activation on Cu surface, while Cu surface after high $N_2$ gas partial pressure plasma treatment showed less copper oxide due to the formation of Cu-N or Cu-O-N passivation layer. It was confirmed that nitrogen plasma can prohibit Cu-O formation on Cu surface, but nitrogen partial pressure in the $Ar-N_2$ plasma should be optimized for the formation of nitrogen passivation layer on the entire surface of Cu wafer.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.437-440
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• 2000

Composite material consists of more than two materials and make various kinds of composite materials by combining different single materials. Copper clad aluminum composite material is composed of Al and Cu, and it has already been put to practical use in Europe because of its economic benefits. This paper presents the interface bonding according to the variation of extrusion ratio and semi-angle die by observing the interface between Cu and Al using metal microscope. By that result, we can predict the conditions of the interface bonding according to the extruding conditions.

• Bulletin of the Korean Chemical Society
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• v.13 no.2
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• pp.122-127
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• 1992

Some perovskites $A($Cu_{1}3}Nb_{2}3}$)O_3(A=$Sr^{2+}$$, $Ba^{2+}$ and $Pb^{2+}$) and their series of mixed perovskites have been prepared by solid state reaction. Single perovskite phase was obtained in Sr or Ba rich samples, but pyrochlore phase was found in Pb rich samples. The stability of perovskite phase is dependent on the ionicity of bonding as well as the tolerance factor. All the obtained perovskites have tetragonal symmetry distorted by Jahn-Teller effect of $Cu^{2+}$. In the case of $Sr(Cu_{1}3}Nb_{2}3})O_3$, some superlattice lines caused by threefold enlarging of fundamental unit cell were observed. And, the symmetry of B site octahedron and the bonding character of B-O bond have been studied by IR, ESR and diffuse reflection spectroscopy. It appeared that the symmetry and the bonding character are influenced by such factors as the size and the basicity of A cation.

• Advances in materials Research
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• v.8 no.1
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• pp.1-10
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• 2019

Roll bonding (RB) process of bi-metal laminates as a new noble method of bonding has been widely used in the production of bimetal laminates. In the present study, asymmetric roll bonding process as a new noble method has been presented to produce Al/Cu bimetallic laminates with the thickness reduction ratios 10%, 20% and 30% together with mismatch rolling diameter ($\frac{R_2}{R_1}$) ratio 1:1, 1:1.1 and 1:1.2. ABAQUS as a finite element simulation software was used to model the deformation of samples. The main attention in this study focuses on the bonding properties of Al/Cu samples. The effect of the $\frac{R_2}{R_1}$ ratios was investigated to improve the bond strength. During the simulation, for samples produced with $\frac{R_2}{R_1}=1:1.2$, the vertical plastic strain of samples was reach the maximum value with a high quality bond. Moreover, the peeling surface of samples after the peeling test was investigated by the scanning electron microscopy (SEM).

• Proceedings of the KWS Conference
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• 2001.05a
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• pp.292-294
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• 2001

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.913-920
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• 2012

In spite of some problems in processability and bondability, Au wires in the microelectronics industry are gradually being replaced by copper wires to reduce the cost of raw material. In this article, the effects of surface roughness enhanced capillaries on thermosonic Cu wire bonding were evaluated. The roughness-enhanced zirconia toughened alumina (ZTA) capillaries were fabricated via a thermal grooving technique. As a result, the shear bond strength of first bonds (ball bonds) bonded using the roughness-enhanced capillary was enhanced by 15% as compared with that of normal bonds due to more effective plastic deformation and flow of a Cu ball. In the pull-out test of second bonds (stitch bonds), processed at two limit conditions on combinations of process parameters, the bond strength of bonds formed using the roughness-enhanced capillary also resulted in values higher by 55.5% than that of normal bonds because of the increase in the bonding area, indicating the expansion of a processing window for Cu wire bonding. These results suggest that the adoption of roughness-enhanced capillaries is a promising approach for enhancing processability and bondability in Cu wire bonding.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.37-41
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• 2012

The wafer level stacking with Cu-to-Cu bonding becomes an important technology for high density DRAM stacking, high performance logic stacking, or heterogeneous chip stacking. Cu CMP becomes one of key processes to be developed for optimized Cu bonding process. For the ultra low-k dielectrics used in the advanced logic applications, Ti barrier has been preferred due to its good compatibility with porous ultra low-K dielectrics. But since Ti is electrochemically reactive to Cu CMP slurries, it leads to a new challenge to Cu CMP. In this study Ti barrier/Cu interconnection structure has been investigated for the wafer level 3D integration. Cu CMP wafers have been fabricated by a damascene process and two types of slurry were compared. The slurry selectivity to $SiO_2$ and Ti and removal rate were measured. The effect of metal line width and metal density were evaluated.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.67-73
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• 2012

After flash memory card(FMC) was manufactured by $B^2it$ process, interfacial reaction of silver bump with thermal stress was studied. To investigate bonding reliability of Ag bump, thermal shock and thermal stress tests were conducted and then examined on the crack between Cu land and Ag bump interface. Diffusion reaction of Ag bump/Cu land interface was analyzed using SEM, EDS and FIB. The Ag-Cu alloy layer due to the interfacial reaction was formed at the Ag/Cu interface. As the diffusivity of Ag ${\rightarrow}$ Cu is faster than Cu ${\rightarrow}$ Ag, a lot of (Cu, Ag) alloy layers were observed at the Cu layer than Ag. These alloy layers contributed to increase the Cu-Ag bonding strength and its reliability.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.34-36
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• 2005

Copper wire bonding is an alternative interconnection technology that serves as a viable and cost saving alternative to gold wire bonding. In this paper, ultrasonic wedge bonding with $25{\mu}m$ copper wire on Au/Ni/Cu metallization of a PCB substrate was performed at ambient temperature. The central composite design of experiment (DOE) approach was applied to optimize the copper wire wedge bonding process parameters. After that, pull test of the wedge bond was performed to study the bond strength and to find the optimum bonding parameters. SEM was used to observe the cross section of the wedge bond. The pull test results show good performance of the wedge bond. Additionally, DOE results gave the optimized parameter for both the first bond and the second bond. Cross section analysis shows a continuous interconnection between the copper wire and Au/Ni/Cu metallization. The diffusion of Cu into the Au layer was also observed.