• 제목/요약/키워드: Cu-Cu Bonding

검색결과 338건 처리시간 0.025초

도재 소부용 팔라디움계 합금의 도재 결합양상에 관한 연구 (A STUDY ON THE BONDING BEHAVIOR OF PALLADIUM-BASED ALLOYS FOR CERAMO-MENTAL RESTORATION)

  • 장훈;임호남;최부병
    • 대한치과보철학회지
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    • 제27권1호
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    • pp.143-179
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    • 1989
  • To observe the bonding behavior of palladium-based alloys to porcelain; 1. Pd-Co binary alloy with the higher cobalt content, 2. Pd-Co binary alloy with the lower cobalt content, 3. Pd-Ag-Sn ternary alloy, 4. Pd-Ag binary alloy, 5. Pd-Cu-Au ternary alloy and 6. Pd-Cu binary alloy were made as 6 groups of experimental alloys. Each group of alloy was divided into 4 sub-groups such as one sub-group that was not degassed and three sub-groups that degassed for 5 minutes, 10 minutes and 15 minutes. On each specimen, weight changes after degassing, morphological changes of oxide layer by changing the degassing time, compositional changes at metal-ceramic interface and bond strength of metal-ceramic measured with planar shear test were observed and compared. The results of the present study allow the following conclusions to be drawn: 1. The alloy showing the greatest bond strength was Pd-Cu alloy without gold and bond strength was decreased by alloying gold to them. 2. Although Pd-Co alloy showed the most prominent oxidation behavior, bond strength of them to porcelain was not greatly high by the formation of porosities at metal-ceramic interfaces. 3. Likewise tin, cobalt formed the peaks on line profiles at metal-ceramic interface, however copper did not exhibit such peaks on line profiles. 4. Mainly, oxide layer on Pd-Co alloy was composed with cobalt, and for Pd-Co alloy with higher cobalt content the rise of bond strength was not significant by increased degassing time. 5. On Pd-Ag alloy not containing tin, during degassing for 15 minutes silver content was increased at metal-ceramic interface. 6. As an oxidized element, tin formed the oxide layers that widen their area by increasing the degassing time, while cobalt and copper showed the morphological changes of particle or crystal on oxide layer.

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원추형 다이를 이용한 Cu-Al 층상 복합재료의 직접압출 (The Direct Extrusion of Copper Clad Aluminum Composite Materials by Using the Conical Dies)

  • 윤여권;김희남
    • 대한기계학회논문집A
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    • 제25권10호
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    • pp.1541-1550
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    • 2001
  • This paper describes experimental investigations in the direct extrusion of copper clad aluminum rods through conical dies. Composite materials consist of two or more different material layers. Copper clad aluminum composite materials are being used fur economic and structural purposes and the development of an efficient production method of copper clad aluminum composite material rods by extrusion is very important, It is necessary to know the conditions in which successful uniform extrusion ,and sound cladding may be carried out without any defects in the direct extrusion. There are several variables that have an influence on determining a sound clad extrusion. In order to investigate the influence of these parameters on the hot direct extrudability of the copper clad aluminum composite material rods, the experimental study have been performed with various extrusion temperatures, extrusion ratios and semi-cone angles of die. Subsequently, the microscopic inspection of interface bonding is carried out for extruded products. By measuring hardness, along extrusion way of products, a variation of hardness has been discussed. Proportional flow state has been considered by measuring radius ratio of Cu sleeve and Al core before and after extrusion.

웨이퍼 레벨 적층 공정에서 웨이퍼 휘어짐이 정렬 오차에 미치는 영향 (Effects of Wafer Warpage on the Misalignment in Wafer Level Stacking Process)

  • 신소원;박만석;김사라은경;김성동
    • 마이크로전자및패키징학회지
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    • 제20권3호
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    • pp.71-74
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    • 2013
  • 본 연구에서는 웨이퍼 레벨 적층 과정에서 발생하는 웨이퍼 오정렬(misalignment) 현상과 웨이퍼 휘어짐(warpage)과의 관계에 대해서 조사하였다. $0.5{\mu}m$ 두께의 구리 박막 증착을 통해 최대 $45{\mu}m$의 휨 크기(bow height)를 갖는 웨이퍼를 제작하였으며, 이 휘어진 웨이퍼와 일반 웨이퍼를 본딩하였을 때 $6{\sim}15{\mu}m$ 정도의 정렬 오차가 발생하였다. 이는 약 $5{\mu}m$의 웨이퍼 확장(expansion)과 약 $10{\mu}m$의 미끄러짐(slip)의 복합 거동으로 설명할 수 있으며, 웨이퍼 휘어짐의 경우 확장 오정렬보다 본딩 과정에서의 미끄러짐 오정렬에 주로 기여하는 것으로 보인다.

AlN 세라믹스와 금속간 계면접합에 관한 연구: II. AlN/Cu 접합체의 잔류응력에 미치는 Mo 중간재의 영향 (A Study on the Interfacial Bonding between AlN Ceramics and Metals: II. Effect of Mo Interlayer on the Residual Stress of AlN/Cu Joint)

  • 박성계;김지순;유희;염영진;권영순
    • 한국재료학회지
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    • 제9권10호
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    • pp.970-977
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    • 1999
  • 활성금속브레이징법으로 계면접합된 AlN/Cu 접합체의 잔류응력 완화에 미치는 Mo 중간재의 영향을 조사하였다. 유한요소법에 의한 응력 해석과 접합체 강도 측정, 파단면의 관찰을 행하였으며, 이들 결과를 비교, 분석하였다. 응력 해석 결과로부터, Mo 중간재를 사용할 경우 최대 잔류 주응력이 형성되는 위치가 AlN/삽입금속 계면으로부터 삽임금속/Mo 계면을 통하여 Mo 내부로 이동됨을 확인하였다.접합체의 자유표면에 형성되는 인장성분의 응력집중 위치는 Mo 중간재 두께가 증가됨에 따라 Cu/Mo 계면과 Mo/AlN 계면의 두 곳으로 분리되었으며, AlN측 잔류응력의 크기는 크게 감소하였다. 중간재를 사용하지 않은 경우 최대 접합강도가 52 MPa로 낮은 강도를 보였으나, 두께 400$\mu\textrm{m}$ 이상의 Mo 중간재를 사용한 접합체의 경우, 200 MPa 이상, 최대 275 MPa의 접합강도를 얻을 수 있었다.

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WETTING PROPERTIES AND INTERFACIAL REACTIONS OF INDIUM SOLDER

  • Kim, Dae-Gon;Lee, Chang-Youl;Hong, Tae-Whan;Jung, Seung-Boo
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.475-480
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    • 2002
  • The reliability of the solder joint is affected by type and extent of the interfacial reaction between solder and substrates. Therefore, understanding of intermetallic compounds produced by soldering in electronic packaging is essential. In-based alloys have been favored bonding devices that demand low soldering temperatures. For photonic and fiber optics packaging, m-based solders have become increasingly attractive as a soldering material candidate due to its ductility. In the present work, the interfacial reactions between indium solder and bare Cu Substrate are investigated. For the identification of intermetallic compounds, both Scanning Electron Microscopy(SEM) and X-Ray Diffraction(XRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu$_{11}$In$_{9}$ was observed for bare Cu substrate. Additionally, the growth rate of these intermetallic compounds was increased with the reaction temperature and time. We found that the growth of the intermetallic compound follows the parabolic law, which indicates that the growth is diffusion-controlled.d.

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Fine-Pitch Solder on Pad Process for Microbump Interconnection

  • Bae, Hyun-Cheol;Lee, Haksun;Choi, Kwang-Seong;Eom, Yong-Sung
    • ETRI Journal
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    • 제35권6호
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    • pp.1152-1155
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    • 2013
  • A cost-effective and simple solder on pad (SoP) process is proposed for a fine-pitch microbump interconnection. A novel solder bump maker (SBM) material is applied to form a 60-${\mu}m$ pitch SoP. SBM, which is composed of ternary Sn3.0Ag0.5Cu (SAC305) solder powder and a polymer resin, is a paste material used to perform a fine-pitch SoP through a screen printing method. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder, the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. Test vehicles with a daisy chain pattern are fabricated to develop the fine-pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si chip has 6,724 bumps with a 45-${\mu}m$ diameter and 60-${\mu}m$ pitch. The chip is flip chip bonded with a Si substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of the underfill. The optimized bonding process is validated through an electrical characterization of the daisy chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and microbump interconnection using a screen printing process.

Si 칩에 형성된 박막히터를 이용한 Chip-on-Glass 공정 (Chip-on-Glass Process Using the Thin Film Heater Fabricated on Si Chip)

  • 정부양;오태성
    • 마이크로전자및패키징학회지
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    • 제14권3호
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    • pp.57-64
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    • 2007
  • Si 칩에 박막히터를 형성하고 이에 전류를 인가하여 LCD (liquid crystal display) 패널의 유리기판은 가열하지 않으면서 Si 칩만을 선택적으로 가열함으로써 Si 칩을 LCD 패널의 유리기판에 실장 하는 새로운 COG 공정기술을 연구하였다. $5\;mm{\times}5\;mm$ 크기의 Si 칩에 마그네트론 스퍼터링법으로 폭 $150\;{\mu}m$,두께 $0.8\;{\mu}m$, 전체 길이 12.15 mm의 정방형 Cu 박막히터를 형성하였으며, 이에 0.9A의 전류를 60초 동안 인가하여 Si칩의 Sn-3.5Ag 솔더범프를 리플로우 시킴으로써 Si 칩을 유리기판에 COG 본딩하는 것이 가능하였다.

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광모듈 솔더 접합부의 시효 특성에 관한 연구 (Aging Characteristics of Solder bump Joint for High Reliability Optical module)

  • 김남규;김경섭;김남훈;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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    • pp.204-207
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    • 2003
  • The flip chip bonding utilizing self-aligning characteristic of solder becomes mandatory to meet to tolerances for the optical device. In this paper, a parametric study of aging condition and pad size of sample was conducted. A TiW/Cu UBM structure was adopted and sample was aging treated to analyze the effect of intermetallic compound with time variation. After aging treatment, the tendency to decrease in shear strength was measured and the structure of the fine joint area was observed by using SEM, TEM and EDS. In result, the shear strength was decreased of about 20% in the $100{\mu}m$ sample at $170^{\circ}C$ aging compared with the maximum shear strength of same pad size sample. In the case of the $120^{\circ}C$ aging treatment, 17% of decrease in shear strength was measured at the $100{\mu}m$ pad size sample. Also, intremetallic compound of $Cu_6Sn_5$ and $Cu_3Sn$ were observed through the TEM measurement by using an FIB technique that is very useful to prepare TEM thin foil specimens from the solder joint interface.

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Synthesis and Application of Metal Doped Silica Particles for Adsorptive Desulphurization of Fuels

  • Jabeen, Bushra;Rafique, Uzaira
    • Environmental Engineering Research
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    • 제19권3호
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    • pp.205-214
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    • 2014
  • Petroleum a vital commodity affecting every aspect of 21st century. Toxicity and adverse effects of sulphur as catalyst in petroleum products is of great concern required development of techniques for desulphurization in compliance with the International standards. Installation of desulphurizing units costs over $200 million per unit placing economic burden on developing countries like Pakistan. Present study analysis of commercial fuels (station petrol and jet fuel JP8) on gas chromatography-mass spectrometry (GC-MS) identified sulphur concentration of 19.94 mg/L and 21.75 mg/L, respectively. This scenario urged the researcher to attempt synthesis of material that is likely to offer good adsorption capacity for sulphur. Following protocol of sol-gel method, transition metals (Ni, Cu, Zn) solution is gelated with tetraethoxysilane (TEOS; silica precursor) using glycerol. Fourier transform infrared spectroscopy (FTIR) spectra revealed bonding of Zn-O, Cu-O, and Ni-O by stretching vibrations at $468cm^{-1}$, $617cm^{-1}$, and $468cm^{-1}$, respectively. Thiophene and Benzothiophene mixed in n-heptane and benzene (4:1) for preparation of Model Fuels I and II, respectively. Each of silica based metal was applied as adsorbent in batch mode to assess the removal efficiency. Results demonstrated optimal desulphurization of more than 90% following efficacy order as Si-Ni > Si-Zn > Si-Cu based adsorbents. Proposed multilayered (Freundlich) adsorption mechanism follows ${\pi}$-complexation with pseudo secnd order kinetics.

유기박막을 이용한 Si기판상의 구리피복층 형성에 관한 연구 (Plating of Cu layer with the aid of organic film on Si-wafer)

  • 박지환;박소연;이종권;송태환;류근걸;이윤배;이미영
    • 한국산학기술학회논문지
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    • 제5권5호
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    • pp.458-461
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    • 2004
  • 본 논문에서는 Si wafer와 Cu사이의 밀착력을 증가시키기 위해 Si wafer전처리 후 plasma와 SAMs처리 방법에 의한 Cu도금의 형성에 관한 방법을 설명하였다. Si wafer를 Piranha solution과 $0.5{\%}$ HF처리 후 유기박막인 SAMs과 plasma를 이용하는 방법으로 wafer와 Cu층 사이의 밀착력을 증가시켰다. 도금층의 밀착력은 scratch test 로 측정하였으며 , AFM을 이용해 시편에 형성된 패턴의 형태를 관찰하고 SEM과 EDS를 이용해 시편의 조직을 관찰하였다. 그 결과 Si wafer를 $O_{2}, He, SAMs$를 혼합처리 했을 때 밀착성이 가장 우수하였다.

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