• Journal of the Korean Society of Clothing and Textiles
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• v.26 no.3_4
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• pp.473-484
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• 2002

The physical characteristics of silk and wool fabrics dyed with OFS-FR and SM-FR were examined and color difference and colorfastness of these fabrics were analyzed. The results are as follows; 1. The thickness, density and weight of both dyed fabrics were increased than those of undyed fabrics independently of dyeing materials and mordants. 2. Air permeability of all the silk samples increased than that of undyed silk, on the other hand, air permeability of most of wool samples decreased than that of undyed wool. 3. Thermal insulation values of silk samples were not consistent with dyeing conditions, but those of wool samples increased than those of undyed fabrics regardless of dyeing materials and mordants. 4. Color difference was clear between OFS-FR and SM-FR dyed fabrics. The colors dyed with OFS-FR-Al and OFS-FR-chitos an showed violet, those dyed with SM-FR displayed yellowish, in addition to in case of wool, dyed with OFS-FR-Cu the color was greenish yellow, in case of silk dyed with SM-FR-Cu that was yellowish red. 5. Sense of silk fabrics by sensory-test was soft and smooth. Feeling of colors in silk fabrics was wick, warm and slightly brilliant. In case wool, sense of dyed fabrics was slightly soft and slightly rough. Feeling of colors in wool fabrics was warm but not elegant. Therefore the result of sensory-test in silk might be better than that of in wool. 6. Colorfastness to dry cleaning and perspirations was good, but that to washing and sunlight was not fine.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1035-1040
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• 2010

The research efforts on GaN-based light-emitting diodes (LEDs) keep increasing due to their significant impact on the illumination industry. Surface mount technology (SMT) is widely used to mount the LED packages for practical application. In surface mount soldering both the device body and leads are intentionally heated by a reflow process. We studied on the effects of multiple reflows on microstructural variation and joint strength of the solder joints between the LED package and the substrate. In this study, Pb-free Sn-3.0Ag-0.5Cu solder and a finished pad with organic solderability preservatives (OSP) were employed. A $Cu_6Sn_5$ intermetallic compound (IMC) layer was formed during the multiple reflows, and the thickness of the IMC layerincreased with an increasing number of reflows. The shear force decreased after three reflows. From the observation of the fracture surface after a shear test, partially brittle fractures were observed after five reflows.

• Composites Research
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• v.23 no.3
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• pp.7-12
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• 2010

In order to increase the electrical conductivity and the mechanical properties of carbon fabric composites, multi-walled carbon nanotubes (MWCNTs) and carbon nanofibers (CNFs) were deposited on carbon fabrics by anodic and cathodic electrophoretic deposition (EPD) processes. In the cathodic EPD, carbon nano-particles and nano-sized Cu particles were simultaneously deposited on the carbon fabric, which gave a synergetic effect on the enhancement of properties as well as the degree of deposition. The hybridization of carbon nano-particles and micron-sized carbon fiber significantly improved the through-the-thickness electrical conductivity. In addition, both MWCNTs and CNFs were deposited onto the carbon fabric for multi-scale hybrid composites. Multi-scale deposition improved the through-the-thickness electrical conductivity, compared to the deposition of either MWCNTs or CNFs.

• Journal of the Korean Society of Safety
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• v.23 no.5
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• pp.54-60
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• 2008

The objective of this study is to obtain the optimal process condition and the maximum decomposition efficiency by measuring the decomposition efficiency, electricity consumption, and voltage in accordance with the change of the process variables such as the frequency, maintaining time period, concentration, electrode material, thickness of the electrode, the number of windings of the electrode, and added materials etc. of the harmful atmospheric contamination gases such as NO, $NO_2$, and $SO_2$ etc. with the plasma which is generated by the discharging of the specially designed and manufactured $TiO_2$ catalysis reactor and SPCP reactor. The decomposition efficiency of the NO, the standard samples, is obtained with the plasma which is being generated by the discharge of the combination effect of the $TiO_2$ catalysis reactor and SPCP reactor with the variation of those process variables such as the frequency of the high voltage generator($5{\sim}50kHz$), maintaining time of the harmful gases($1{\sim}10.5sec$), initial concentration($100{\sim}1,000ppm$), the material of the electrode(W, Cu, Al), the thickness of the electrode(1, 2, 3mm), the number of the windings of the electrode(7, 9, 11turns), basic gases($N_2$, $O_2$, air), and the simulated gas($CO_2$) and the resulting substances are analyzed by utilizing FT-IR & GC.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.2-243.2
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• 2016

Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

• Journal of electromagnetic engineering and science
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• v.8 no.3
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• pp.129-133
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• 2008

An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.46-49
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• 2002

The aim of this paper is to investigate the influence of various deformation ratio on texture of Ag tapes that can be used as a RE-$Ba_2Cu_3O_{7-{\delta}}$ coated conductor tapes without any buffer layer. We fabricated as-rolled Ag substrate with various deformation ratio per step. Thickness and total deformation ratio of Ag tapes were $100{\mu}m$ and >98%, respectively. And as-rolled Ag substrate was annealed at $750^{\circ}C$ for 30min. The as-rolled and recrystallization textures were measured using x-ray pole figures and orientation distribution function (ODF) analysis. With the increase of rolling ratio from 5 to 20%, deformation texture are changed from {1l0}<311> to {1l0}<112>, {032}<100>, {051}<211>. After recrystallization by annealing, main texture was observed to {013}<100> under present condition.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.261-266
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• 2009

The mechanical and electrical properties of ball grid array (BGA) solder joints were measured, consisting of Sn-3.5Ag, with organic solderability preservative (OSP)-finished Cu pads and Electroless Nickel/Immersion Gold (ENIG) surface finishes. The mechanical properties were measured by die shear test. When ENIG PCB was upper joint and OSP PCB was lower joint, the highest shear force showed at the third reflow. When OSP PCB was upper joint and ENIG PCB was lower joint, the highest shear force showed at the forth reflow. For both joints, after the die shear results reached the highest shear force, shear force decreased as a function of increasing reflow number. Electrical property of the solder joint decreased with the function of increasing reflow number. The scanning electron microscope results show that the IMC thickness at the bonding interface gets thicker while the number of reflow increases.

• The Journal of the Acoustical Society of Korea
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• v.33 no.2
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• pp.102-110
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• 2014

The effect of a bonding layer on the performance of a quarter-wave (${\lambda}/4$) mode PVDF ultrasound transducer having not only a piezoelectric layer but also a non-piezoelectric layer between two electrodes was analyzed. The equivalent circuit of a transmission line model by Kikuchi et al.[Sound of IEICE, 55-A, 331-338 (1981)] was introduced for the analysis. The validity of the model was confirmed by comparison with a KLM model for three postulated adhesion cases of a $80{\mu}m$ thick piezoelectric PVDF film to a copper (Cu) backer. The pulse-echo responses of five PVDF transducers, each fabricated with a different thickness ($5{\mu}m{\sim}20{\mu}m$) of the bonding layer, were measured and the results were compared with those by simulation. The two results were in good agreement with each other and it was noted that the effect of the bonding layer on the performance of the transducer could be analyzed by the Kikuchi model. In detail, the $20{\mu}m$ bonding layer decreased the center frequency and the bandwidth by about 19.7 % and 25.0 %, respectively, and increased the insertion loss by 57.2 %.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.