• Korean Journal of Materials Research
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• v.22 no.7
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• pp.374-378
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• 2012

In an effort to overcome the problems which arise when fabricating high-aspect-ratio TSV(through silicon via), we performed experiments involving the void-free Cu filling of a TSV(10~20 ${\mu}m$ in diameter with an aspect ratio of 5~7) by controlling the plating DC current density and the additive SPS concentration. Initially, the copper deposit growth mode in and around the trench and the TSV was estimated by the change in the plating DC current density. According to the variation of the plating current density, the deposition rate during Cu electroplating differed at the top and the bottom of the trench. Specifically, at a current density 2.5 mA/$cm^2$, the deposition rate in the corner of the trench was lower than that at the top and on the bottom sides. From this result, we confirmed that a plating current density 2.5 mA/$cm^2$ is very useful for void-free Cu filling of a TSV. In order to reduce the plating time, we attempted TSV Cu filling by controlling the accelerator SPS concentration at a plating current density of 2.5 mA/$cm^2$. A TSV with a diameter 10 ${\mu}m$ and an aspect ratio of 7 was filled completely with Cu plating material in 90 min at a current density 2.5 mA/$cm^2$ with an addition of SPS at 50 mg/L. Finally, we found that TSV can be filled rapidly with plated Cu without voids by controlling the SPS concentration at the optimized plating current density.

• Journal of the Korean institute of surface engineering
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• v.40 no.1
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• pp.16-22
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• 2007

Recently, mesoporous metallic materials are becoming more and more important in various applications like catalysts, electrochemical detectors, batteries, and fuel cells because of their high surface area. Among the various methods for manufacturing mesoporous structure, surfactant templating method followed by electroplating has been tried in this study. A mesoporous metallic film was prepared by electrodeposition from electroplating solution mixed with surfactant template. Nonionic type lyotropic liquid crystalline surfactant, Brij56, and nickel acetate based solution were selected as a template material and electroplating solution, respectively. To determine the content of surfactant forming a hexagonal column structure, the phase diagram of electroplating solution and surfactant mixture has been exploited by polarized optical microscopy equipped with heating and cooling stage. Nickel films were electroplated on Cu foil by stepwise potential input method to alleviate the concentration polarization occurred during the electroplating process. TEM and XRD analyses were performed to characterize the size and shape of mesostructures in manufactured nickel films, and electrochemical characterization was also carried out using cyclic voltammetry.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.62-64
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• 2001

In this paper, we present the fabrication and performance of tunable capacitors with various structural geometry of plates. Experimental devices have been fabricated using Cu-electroplating techniques and standard MEMS techniques. In particular, the thickness of electroplated Cu is designed below $0.5{\mu}m$ for lower actuation voltage. The fabricated tunable capacitors has been tested from $OV{\sim}42V$ and achieves a tuning ratio of $46%{\sim}64.2%$.

• Progress in Superconductivity
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• v.7 no.2
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• pp.145-151
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• 2006

Nickel and nickel-tungsten alloy were electroplated on a cold rolled and heat treated copper(Cu) substrate. 4 mm-thick high purity commercial grade Cu was rolled to various thicknesses of 50, 70, 100 and 150 micron. High reduction ratio of 30% was applied down to 150 micron. Rolled texture was converted into cube texture via high temperature heat treatment at $400-800^{\circ}C$. Grain size of Cu was about 50 micron which is much smaller compared to >300 micron for the Cu prepared using smaller reduction pass of 5%. 1.5 km-long 150 micron Cu was fabricated with a rolling speed of 33 m/min and texture of Cu was uniform along length. Abnormal grain growth and non-cube texture appeared for the specimen anneal above $900^{\circ}C$. 1-10 micron thick Ni and Ni-W film was electroplated onto an annealed cube-textured Cu or directly on a cold rolled Cu. Both specimens were annealed and the degree of texture was measured. For electroplating of Ni on annealed Cu, Ni layer duplicated the cube-texture of Cu substrate and the FWHM of in plane XRD measurement for annealed Cu layer and electroplated layer was $9.9^{\circ}\;and\;13.4^{\irc}$, respectively. But the FWHM of in plane XRD measurement of the specimen which electroplated Ni directly on cold rolled Cu was $8.6^{\circ}$, which is better texture than that of nickel electroplated on annealed Cu and it might be caused by the suppression of secondary recrystallization and abnormal grain growth of Cu at high temperature above $900^{\circ}C$ by electroplated nickel.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.39-46
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• 2003

Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

• Journal of the Korean institute of surface engineering
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• v.43 no.2
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• pp.64-72
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• 2010

CuSnZn electroplating was investigated as alternative to Ni plating. Evaluation of electrolyte and plating process was performed to control physical characteristics of the film, and to collect practical data for application. Hull-cell test was conducted for basic comparison of two commercialized products and developed product. Based on hull-cell test results, long term test of three electrolytes was performed. Various analysis on long term tested electrolyte and samples have been done. Reliable and practical data was collected using FE-SEM (FEI, Sirion), EDX (ThermoNoran SIX-200E), ICP Spectrometer (GBC Scientifi c, Integra XL), FIB (FEI, Nova600) for anlysis. Physical analysis and reliability test of the long term tested film were also carried out. Through this investigation plating time, plating speed, electrolyte composition, electrolyte metal consumption, hardness and corrosion resistance has been compared. This set of data is used to predict and control the chemical composition of the film and modify the physical characteristics of the CuSnZn alloy.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.245-247
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• 2007

Sn-base solder bump is mainly used in micro-joining for flip chip package. The quantity of intermetallic compounds that was formed between Cu pad and solder interface importantly affects reliability. In this research, micro-bump was fabricated by two binary electroplating and the intermetallic compounds(IMCs) was estimated quantitatively. When the micro Sn-Ag solder bump was made by electroplating, SiC powder was added in the plating solution for protecting of intermetallic growth. Then, the intermetallic compounds growth was decrease with increase of amount of SiC power. However, if the mount of SiC particle exceeds 4 g/L, the effect of the growth restraint decrease rapidly.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.129-134
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• 2005

Electroplating copper is the important role in formation of 3D stacking interconnection in SiP (System in Package). The I-V characteristics curves are investigated at different electrolyte conditions. Inhibitor and accelerator are used simultaneously to investigate the effects of additives. Three different sizes of via are tested. All via were prepared with RIE (reactive ion etching) method. Via's diameter are 50, 75, $100{\mu}m$ and the height is $100{\mu}m$. Inside via, Ta was deposited for diffusion barrier and Cu was deposited fer seed layer using magnetron sputtering method. DC, pulse and pulse revere current are used in this study. With DC, via cannot be filled without defects. Pulse plating can improve the filling patterns however it cannot completely filled copper without defects. Via was filled completely without defects using pulse-reverse electroplating method.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.62-62
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.138-138
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• 2008