The Effect of SiC Nanopaticles on Interface of Micro-bump manufactured by electroplating

나노입자가 전해도금으로 형성된 미세범프의 계면에 미치는 영향

  • 신의선 (한국생산기술연구원 생산기반기술본부 정밀접합팀 마이크로조이닝센터) ;
  • 이세형 (한국생산기술연구원 생산기반기술본부 정밀접합팀 마이크로조이닝센터) ;
  • 이창우 (한국생산기술연구원 생산기반기술본부 정밀접합팀 마이크로조이닝센터) ;
  • 정승부 (성균관대학교 신소재공학과) ;
  • 김정한 (한국생산기술연구원 생산기반기술본부 정밀접합팀 마이크로조이닝센터)
  • Published : 2007.11.15

Abstract

Sn-base solder bump is mainly used in micro-joining for flip chip package. The quantity of intermetallic compounds that was formed between Cu pad and solder interface importantly affects reliability. In this research, micro-bump was fabricated by two binary electroplating and the intermetallic compounds(IMCs) was estimated quantitatively. When the micro Sn-Ag solder bump was made by electroplating, SiC powder was added in the plating solution for protecting of intermetallic growth. Then, the intermetallic compounds growth was decrease with increase of amount of SiC power. However, if the mount of SiC particle exceeds 4 g/L, the effect of the growth restraint decrease rapidly.

Keywords