• 신재생에너지
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• 제1권1호
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• pp.37-43
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• 2005

High-efficiency silicon solar cells have potential applications on mobile electronics and electrical vehicles. The fabrication processes of the high efficiency cells necessitate com placated fabrication precesses and expensive materials. Ti/Pd/Ag metal contact has been used only for limited area In spite of good stability and low contact resistance because of Its expensive material cost and precesses. Screen printed contact formed by Ag paste causes a low fill factor and a high shading loss of commercial solar cells because of high contact resistance and a low aspect ratio. Low cost Ni/Cu metal contact has been formed by using a low cost electroless and electroplating. Nickel silicide formation at the interface enhances stability and reduces the contact resistance resulting In an energy conversion efficiency of $20.2\%\;on\;0.50{\Omega}cm$ FZ wafer. Tapered contact structure has been applied to large area solar cells with $6.7\times6.7cm^2$ in order to reduce power losses by the front contact The tapered front metal contact Is easily formed by the electroplating technique producing $45cm^2$ solar cells with an efficiency of $21.4\%$ on $21.4\%\;on\;2{\Omega}cm$ FZ wafer.

• 분석과학
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• 제25권3호
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• pp.159-163
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• 2012

A spectrofluorimetric method has been developed for the determination of free $CN^-$ in real samples with fluorescent safranine-O. When safranine-O interacts electrostatistically with $CN^-$, the fluorescent intensity of safranine-O is decreased. Several experimental conditions such as pH of the sample solution and the amount of safranine-O were optimized. $Ag^+$ interfered higher than any other ions. Interference of $Ag^+$ could be disregarded because $Ag^+$ was scarcely contained or mostly complexed with $CN^-$ in selected real samples. With this proposed method, the linear range of $CN^-$ was from 5.0 to 110 ng/mL and the detection limit of $CN^-$ was 2.9 ng/mL. For validating this technique, real samples (Cu, Ag, Au electroplating wastewater, and untreated wastewater in university and in sewage treatment plant) were used. Recovery yields of 91.5%~106.0% were obtained. Based on experimental results, it is proposed that this technique can be applied to the practical determination of free $CN^-$.

• 한국수소및신에너지학회논문집
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• 제16권4호
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• pp.379-385
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• 2005

Effects of Co and Co-P catalysts on the hydrolysis of alkaline $NaBH_4$ solution were investigated. Co and Co-P catalysts were prepared on Cu substrate by electroplating. Hydrogen generation rate of Co-P catalyst was much faster than that of Co catalyst, demonstrating that Co-P had higher intrinsic catalytic activity for the hydrolysis of $NaBH_4$ than Co. Hydrogen generation properties of Co-P catalysts largely depended on cathodic current density and electroplating time because they influenced on the P concentration of the Co-P catalysts. Maximum hydrogen generation rate of Co-P catalyst was 1066 ml/min.g-catalyst in 1 wt.% NaOH + 10 wt.% $NaBH_4$ solution at $20^{\circ}C$, which was obtained at cathodic current density of $0.01\;A/cm^2$ for 130 s.

• 마이크로전자및패키징학회지
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• 제22권1호
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• pp.51-54
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• 2015

An electro-plating technology on a cured isotropic conductive pattern with a hybrid Cu paste composed of resin matrix, copper, and solder powders has been developed. In a conventional technology, Ag paste was used to perform a conductive pattern on a PCB or silicon substrate. From previous research, the electrical conductive mechanism and principle of the hybrid Cu paste were concisely investigated. The isotropic conductive pattern on the PCB substrate was performed using screen-printing technology. The optimum electro-plating condition was experimentally determined by processing parameters such as the metal content of the hybrid Cu paste, applied current density, and time for the electroplating in the plating bath. The surfaces and cross-sections were observed using optical and SEM photographs. In conclusion, the optimized processing conditions for Cu electro-plating technology on the conductive pattern were a current density of $40mA/cm^2$ and a plating time of 20min on the hybrid Cu paste with a metal content of 44 vol.%. More details of the mechanical properties and processing conditions will be investigated in further research.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.575-579
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• 2010

The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.

• Bulletin of the Korean Chemical Society
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• 제33권5호
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• pp.1603-1607
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• 2012

The effects of plating process on the surface coverage of the accelerator were investigated in terms of Cu superfilling for device metallization. When a substrate having 500 nm-wide trench patterns on it was immersed in an electrolyte containing poly (ethylene glycol) (PEG)-chloride ion ($Cl^-$)-bis(3-sulfopropyl) disulfide (SPS) additives without applying deposition potential for such a time of about 100s, voids were generated inside of the electrodeposit. In time-evolved electrochemical analyses, it was observed that the process (immersion without applying potential) in the electrolyte led to the build-up of high initial coverage of SPS-Cl on the surface, resulting in the fast saturation of the coverage. Repeated experiments suggested that the fast saturation of SPS-Cl failed in superfilling while a gradual increase in the SPS-Cl coverage through competition with initially adsorbed PEG-Cl enabled it. Consequently, superfilling was achievable only in the case of applying the plating potential as soon as the substrate is dipped in an electrolyte to prevent rapid accumulation of SPS-Cl on the surface.

• 마이크로전자및패키징학회지
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• 제19권3호
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• pp.15-20
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• 2012

In electronics industry, the coming electronic devices will be expected to be high integration and convergence electronics. And also, it will be expected that the coming electronics will be flexible, bendable and wearable electronics. Therefore, the demands and interests of bonding technology between flexible substrate and chip for mobile electronics, e-paper etc. have been increased because of weight and flexibility of flexible substrate. Considering fine pitch for high density and thermal damage of flexible substrate during bonding process, the micro solder bump technology for high density and low temperature bonding process for reducing thermal damage will be required. In this study, we researched on bonding technology of chip and flexible substrate by using 25um Cu pillar bumps and Sn-Bi solder bumps were formed by electroplating. From the our study, we suggest technology on Cu pillar bump formation, Sn-Bi solder bump formation, and bonding process of chip and flexible substrate for the coming electronics.

• 한국표면공학회지
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• 제27권3호
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• pp.158-165
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• 1994

Cu-Cr alloy thin film requires good quality of etching be used for TAB technology. The etched cross sec-tion was clean enough when the etching was performed in 0.1M $FeCl_3$ solution at $50^{\circ}C$. The etching rate was increased with the amount of $KMnO_4$. For enhanced profile of cross section and rate, the spray etchning was found to be superior compared to the immersion etching. A series of experiments were performed to improve the uniformity of the current distribution in electrodeposition onto the substrate with lithographic patterns. Copper was electrodeposited from quiescent-solution, paddle-agitated-solution, and air-bubbled-solution to in-vestigate the effect of the fluid flow. The thickness profile of the specimen measured by profilmetry has the non uniformity at feature scale in quiescent-solution, because of the longitudinal vortex roll caused by the natural convection. However, uniform thickness profile was achieved in paddle-agitated or air bubbled solu-tion.

• 대한금속재료학회지
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• 제47권11호
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• pp.740-747
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• 2009

The purpose of this study is to identify the effect of electrolyte compositions on electrodeposited copper foil. First of all, the polyimide substrate was pretreated with plasma. Finally, copper foil was deposited on a Cu/Ni/Polyimide substrate using the electroplating technique. As the quantity of Cu increased, preferred orientations changed into (111). Increasing sulfuric acid, on the other hand, brought down the preferred orientation of (111). The lowest sheet resistance, surface roughness, and fine adhesion were detected when the ratio of $Cu^{2+}$ and $H_2SO_4$ is 50:50(g/l).

• 대한환경공학회지
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• 제30권5호
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• pp.524-533
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• 2008

도금산업에서 배출되는 폐수는 독성이 강한 시안이온과 시안착화합물, 그리고 다양한 중금속이 함유되어 있다. 이러한 독성이 강한 시안이온 및 시안 착화합물의 처리는 알칼리염소법에 의한 시안 산화처리방법이 가장 일반적으로 잘 알려진 방법이다. 이는 시안이온은 분해 가능하나 시안 착화합물의 처리는 어려운 것으로 알려져 있고, 실제로 산업현장에서 수질환경보전법상 수질배출허용기준(나 지역) 1 mg/L을 초과하는 경우가 빈번하다. 본 연구에서는 앞서 밝힌 아연백법 및 공침공정을 이용한 복합 중금속-시안착염 폐수의 현장처리(I) (아래에서 "현장처리(I)"으로 표시 함)과 비교하여 크롬환원처리 후 Fe/Zn 공침공정을 적용하여 시안착염을 제거하고, 알칼리염소법에 의한 잔류시안 산화처리방법으로 검토하였다. 크롬처리는 6가 크롬을 3가 크롬으로 환원시 환원제로서 NaHSO$_3$를 사용하여 pH 2.0, ORP 250 mV, 반응시간 30 min.에서 99.9% 이상의 최대제거율을 얻을 수 있었다. Fe/Zn 공침에 의한 시안착염 제거실험은 pH 9.5, FeSO$_4$/ZnCl$_2$ 3.0 $\times$ 10$^{-4}$ mol, mixing rpm 240에서 시안이온의 제거효율은 98.24%(잔류시안농도: 4.50 mg/L)로 최대의 결과를 얻었다. 황화물 침전법에 의한 기타중금속(Cu, Ni)처리반응의 조건은 pH 9.0$\sim$10.0, 반응시간 30 min. mixing rpm 240에서 Cu의 경우 Na$_2$S 주입량 3.0 mol에서 99.9%, Ni의 경우 Na$_2$S 4.0 mol에서 93.86%의 최대결과를 얻었다. Fe/Zn공침처리 후 잔류시안농도 4.50 mg/L의 제거를 위하여 알칼리염소법을 실시한 결과 1차 산화반응은 pH 10.0 이상, ORP 350 mV, reaction time 30 min, 2차 산화반응은 pH 8.0 이하, ORP 650 mV, 반응시간 30 min.에서 제거효율 95.33%, 잔류시안농도 0.21 mg/L의 결과를 얻었다. 즉 (1) 크롬환원처리, (2) Fe/Zn 공침공정에 의한 시안착화합물 제거 및 기타 중금속(Cu, Ni) 처리, (3) 알칼리염소법에 의한 잔류시안 산화처리를 실시한 결과(아래에서 "현장처리(II)"로 표시 함) 시안의 잔류농도는 0.21 mg/L로서 수질 및 수생태계보전에 관한 법율의 수질배출허용기준(나 지역) 1 mg/L의 규제치 이하로 처리가 가능하다는 것을 현장 확인할 수 있었고 "현장처리(I)"보다 처리효율적인 측면이나 경제적인 측면에서 모두 양호한 결과를 얻을 수 있었다.