• New & Renewable Energy
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• v.1 no.1 s.1
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• pp.37-43
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• 2005

High-efficiency silicon solar cells have potential applications on mobile electronics and electrical vehicles. The fabrication processes of the high efficiency cells necessitate com placated fabrication precesses and expensive materials. Ti/Pd/Ag metal contact has been used only for limited area In spite of good stability and low contact resistance because of Its expensive material cost and precesses. Screen printed contact formed by Ag paste causes a low fill factor and a high shading loss of commercial solar cells because of high contact resistance and a low aspect ratio. Low cost Ni/Cu metal contact has been formed by using a low cost electroless and electroplating. Nickel silicide formation at the interface enhances stability and reduces the contact resistance resulting In an energy conversion efficiency of $20.2\%\;on\;0.50{\Omega}cm$ FZ wafer. Tapered contact structure has been applied to large area solar cells with $6.7\times6.7cm^2$ in order to reduce power losses by the front contact The tapered front metal contact Is easily formed by the electroplating technique producing $45cm^2$ solar cells with an efficiency of $21.4\%$ on $21.4\%\;on\;2{\Omega}cm$ FZ wafer.

• Analytical Science and Technology
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• v.25 no.3
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• pp.159-163
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• 2012

A spectrofluorimetric method has been developed for the determination of free $CN^-$ in real samples with fluorescent safranine-O. When safranine-O interacts electrostatistically with $CN^-$, the fluorescent intensity of safranine-O is decreased. Several experimental conditions such as pH of the sample solution and the amount of safranine-O were optimized. $Ag^+$ interfered higher than any other ions. Interference of $Ag^+$ could be disregarded because $Ag^+$ was scarcely contained or mostly complexed with $CN^-$ in selected real samples. With this proposed method, the linear range of $CN^-$ was from 5.0 to 110 ng/mL and the detection limit of $CN^-$ was 2.9 ng/mL. For validating this technique, real samples (Cu, Ag, Au electroplating wastewater, and untreated wastewater in university and in sewage treatment plant) were used. Recovery yields of 91.5%~106.0% were obtained. Based on experimental results, it is proposed that this technique can be applied to the practical determination of free $CN^-$.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.4
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• pp.379-385
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• 2005

Effects of Co and Co-P catalysts on the hydrolysis of alkaline $NaBH_4$ solution were investigated. Co and Co-P catalysts were prepared on Cu substrate by electroplating. Hydrogen generation rate of Co-P catalyst was much faster than that of Co catalyst, demonstrating that Co-P had higher intrinsic catalytic activity for the hydrolysis of $NaBH_4$ than Co. Hydrogen generation properties of Co-P catalysts largely depended on cathodic current density and electroplating time because they influenced on the P concentration of the Co-P catalysts. Maximum hydrogen generation rate of Co-P catalyst was 1066 ml/min.g-catalyst in 1 wt.% NaOH + 10 wt.% $NaBH_4$ solution at $20^{\circ}C$, which was obtained at cathodic current density of $0.01\;A/cm^2$ for 130 s.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.51-54
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• 2015

An electro-plating technology on a cured isotropic conductive pattern with a hybrid Cu paste composed of resin matrix, copper, and solder powders has been developed. In a conventional technology, Ag paste was used to perform a conductive pattern on a PCB or silicon substrate. From previous research, the electrical conductive mechanism and principle of the hybrid Cu paste were concisely investigated. The isotropic conductive pattern on the PCB substrate was performed using screen-printing technology. The optimum electro-plating condition was experimentally determined by processing parameters such as the metal content of the hybrid Cu paste, applied current density, and time for the electroplating in the plating bath. The surfaces and cross-sections were observed using optical and SEM photographs. In conclusion, the optimized processing conditions for Cu electro-plating technology on the conductive pattern were a current density of $40mA/cm^2$ and a plating time of 20min on the hybrid Cu paste with a metal content of 44 vol.%. More details of the mechanical properties and processing conditions will be investigated in further research.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.575-579
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• 2010

The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1603-1607
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• 2012

The effects of plating process on the surface coverage of the accelerator were investigated in terms of Cu superfilling for device metallization. When a substrate having 500 nm-wide trench patterns on it was immersed in an electrolyte containing poly (ethylene glycol) (PEG)-chloride ion ($Cl^-$)-bis(3-sulfopropyl) disulfide (SPS) additives without applying deposition potential for such a time of about 100s, voids were generated inside of the electrodeposit. In time-evolved electrochemical analyses, it was observed that the process (immersion without applying potential) in the electrolyte led to the build-up of high initial coverage of SPS-Cl on the surface, resulting in the fast saturation of the coverage. Repeated experiments suggested that the fast saturation of SPS-Cl failed in superfilling while a gradual increase in the SPS-Cl coverage through competition with initially adsorbed PEG-Cl enabled it. Consequently, superfilling was achievable only in the case of applying the plating potential as soon as the substrate is dipped in an electrolyte to prevent rapid accumulation of SPS-Cl on the surface.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.15-20
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• 2012

In electronics industry, the coming electronic devices will be expected to be high integration and convergence electronics. And also, it will be expected that the coming electronics will be flexible, bendable and wearable electronics. Therefore, the demands and interests of bonding technology between flexible substrate and chip for mobile electronics, e-paper etc. have been increased because of weight and flexibility of flexible substrate. Considering fine pitch for high density and thermal damage of flexible substrate during bonding process, the micro solder bump technology for high density and low temperature bonding process for reducing thermal damage will be required. In this study, we researched on bonding technology of chip and flexible substrate by using 25um Cu pillar bumps and Sn-Bi solder bumps were formed by electroplating. From the our study, we suggest technology on Cu pillar bump formation, Sn-Bi solder bump formation, and bonding process of chip and flexible substrate for the coming electronics.

• Journal of the Korean institute of surface engineering
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• v.27 no.3
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• pp.158-165
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• 1994

Cu-Cr alloy thin film requires good quality of etching be used for TAB technology. The etched cross sec-tion was clean enough when the etching was performed in 0.1M $FeCl_3$ solution at $50^{\circ}C$. The etching rate was increased with the amount of $KMnO_4$. For enhanced profile of cross section and rate, the spray etchning was found to be superior compared to the immersion etching. A series of experiments were performed to improve the uniformity of the current distribution in electrodeposition onto the substrate with lithographic patterns. Copper was electrodeposited from quiescent-solution, paddle-agitated-solution, and air-bubbled-solution to in-vestigate the effect of the fluid flow. The thickness profile of the specimen measured by profilmetry has the non uniformity at feature scale in quiescent-solution, because of the longitudinal vortex roll caused by the natural convection. However, uniform thickness profile was achieved in paddle-agitated or air bubbled solu-tion.

• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.740-747
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• 2009

The purpose of this study is to identify the effect of electrolyte compositions on electrodeposited copper foil. First of all, the polyimide substrate was pretreated with plasma. Finally, copper foil was deposited on a Cu/Ni/Polyimide substrate using the electroplating technique. As the quantity of Cu increased, preferred orientations changed into (111). Increasing sulfuric acid, on the other hand, brought down the preferred orientation of (111). The lowest sheet resistance, surface roughness, and fine adhesion were detected when the ratio of $Cu^{2+}$ and $H_2SO_4$ is 50:50(g/l).

• Journal of Korean Society of Environmental Engineers
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• v.30 no.5
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• pp.524-533
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• 2008

Industrial wastewater generated in the electroplating and metal finishing industries typically contain toxic free and complex metal cyanide with various heavy metals. Alkaline chlorination, the normal treatment method destroys only free cyanide, not complex metal cyanide. A novel treatment method has been developed which destroys both free and complex metal cyanide as compared with Practical Plant(I). Prior to the removal of complex metal cyanide by Fe/Zn coprecipitation and removal of others(Cu, Ni), Chromium is reduced from the hexavalent to the trivalent form by Sodium bisulfite(NaHSO$_3$), followed by alkaline-chlorination for the cyanide destruction. The maximum removal efficiency of chromium by reduction was found to be 99.92% under pH 2.0, ORP 250 mV for 0.5 hours. The removal efficiency of complex metal cyanide was max. 98.24%(residual CN: 4.50 mg/L) in pH 9.5, 240 rpm with 3.0 $\times$ 10$^{-4}$ mol of FeSO$_4$/ZnCl$_2$ for 0.5 hours. The removal efficiency of Cu, Ni using both hydroxide and sulfide precipitation was found to be max. 99.9% as Cu in 3.0 mol of Na$_2$S and 93.86% as Ni in 4.0 mol of Na$_2$S under pH 9.0$\sim$10.0, 240 rpm for 0.5 hours. The concentration of residual CN by alkaline-chlorination was 0.21 mg/L(removal efficiencies: 95.33%) under the following conditions; 1st Oxidation : pH 10.0, ORP 350 mV, reaction time 0.5 hours, 2nd Oxidation : pH 8.0, ORP 650 mV, reaction time 0.5 hours. It is important to note that the removal of free and complex metal cyanide from the electroplating wastewater should be employed by chromium reduction, Fe/Zn coprecipitation and, sulfide precipitation, followed by alkaline-chlorination for the Korean permissible limit of wastewater discharge, where the better results could be found as compared to the preceding paper as indicated in practical treatment(I).