• 마이크로전자및패키징학회지
• /
• 제22권4호
• /
• pp.7-14
• /
• 2015

Research and application of three dimensional packaging technology in electronics have been increasing according to the trend of high density, high capacity and light weight in electronics. In this paper, TSV fabrication and research trend in three dimensional packaging are reported. Low alpha solder bumping which can solve the soft error problem in electronics is also introduced. In detail, this paper includes fabrication of TSV, functional layers deposition, Cu filling in TSV by electroplating using PPR (periodic pulse reverse) and 3 step PPR processes, and low alpha solder bumping on TSV by solder ball. TSV and low alpha solder bumping technologies need more studies and improvements, and the drawbacks of three dimensional packaging can be solved gradually through continuous attentions and researches.

• 한국재료학회지
• /
• 제11권3호
• /
• pp.185-190
• /
• 2001

(hfac)Cu(I)L구리 1가 전구체의 경우 L의 종류에 따라 여러 화합물이 존재하며 L이 전구체의 특성 및 증착에 미치는 영향을 규명하였다. 이때 중성리간드는 ATMS(allytrimethylsilane), VTMS(vinyltri-methylsilane), VCH(vinylcyclohexane), MP (4-methyl-1-pentene), ACP(allylcyclopentane), DMB (3,3-dimethyl-1-butene) 등의 alkene류이었다 hfacCu(I)L 전구체는 TG-DSC 분석에서 관찰된 Cu(I)-L 분해 온도가 낮으면 $100^{\circ}C$ 이하의 저온 증착이 가능하였고 저온에서 낮은 박막 비저항 값을 얻을 수 있었다. 또한 이 분해온도가 높은 전구체 일수록 열적으로 안정함을 일정 시간 가열평가를 통해 알 수 있었다. 약 $125~175^{\circ}C$ 증착온도에서는 중성리간드의 종류에 무관하게 증착된 구리 박막의 비저항값이 거의 비슷하였고 약 $226^{\circ}C$ 이상의 증착온도에서는 박막의 비저항이 중성리간드의 분자량의 크기에 비례하여 증가하였다. 전구체의 증기압은 중성리간드의 끓는점과 가장 밀접한 관계가 있으며 중성리간드의 끓는점이 낮으면 낮을수록 증기압은 높았다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.252-255
• /
• 2004

반도체는 high integrated, high speed, low power를 위하여 design 뿐만 아니라 재료 측면에서도 많은 변화를 가져오고 있으며, RC delay time을 줄이기 위하여 Al 배선보다 비저항이 낮은 Cu와 low-k material 적용이 그 대표적인 예이다. 그러나, Cu 배선의 경우 dry etching이 어려우므로, 기존의 공정으로는 그 한계를 가지므로 damascene 또는 dual damascene 공정이 소개, 적용되고 있다. Damascene 공정은 절연막에 photo와 RIE 공정을 이용하여 trench를 형성시킨 후 electrochemical plating 공정을 이용하여 trench에 Cu를 filling 시킨다. 이후 CMP 공정을 이용하여 절연막 위의 Cu와 barrier material을 제거함으로서 Cu 배선을 형성하게 된다. Dual damascene 공정은 trench와 via를 동시에 형성시키는 기술로 현재 대부분의 Cu 배선 공정에 적용되고 있다. Cu CMP는 기존의 metal CMP와 마찬가지로 oxidizer를 이용한 Cu film의 화학반응과 연마 입자의 기계가공이 기본 메커니즘이다. Cu CMP에서 backside pressure 영향이 uniformity에 미치는 영향을 살펴보았으며, electrochemical plating 공정에서 발생하는 hump가 CMP 결과에 미치는 영향과 dishing 결과를 통하여 그 영향을 평가하였다.

• 한국재료학회지
• /
• 제20권2호
• /
• pp.90-96
• /
• 2010

The recirculating electrochemical flow reactor developed at UCLA has been employed to fabricate nanostructured GMR multilayers. For comparison, Ni/Cu multilayers have been electrodeposited from a single bath, from dual baths and from the recirculating electrochemical flow reactor. For a magnetic field of 1.5 kOe, higher GMR (Max. -5%) Ni/Cu multilayers with low electrical resistivity (< $10\;{\mu}{\Omega}{\cdot}cm$) were achieved by the electrochemical flow reactor system than by the dual bath (Max. GMR = -4.2% and < $20\;{\mu}{\Omega}{\cdot}cm$) or the single bath (Max. GMR = -2.1% and < $90\;{\mu}{\Omega}{\cdot}cm$) techniques. Higher GMR effects have been obtained by producing smoother, contiguous layers at lower current densities and by the elimination of oxide film formation by conducting deposition under an inert gas environment. Our preliminary GMR measurements of Ni/Cu multilayers from the electrochemical flow reactor obtained at low magnetic field of 0.15 T, which may approach or exceed the highest reported results (-7% GMR) at magnetic fields > 5 kOe.

• 한국전기전자재료학회논문지
• /
• 제24권4호
• /
• pp.328-332
• /
• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surface. One of the front metal contacts is Ni/Cu plating that it is available to simply and inexpensive production to apply mass production. Ni is shown to be a suitable barrier to Cu diffusion into the silicon. The process of Ni electroless plating on front silicon surface is performed using a chemical bath. Additives and buffer agents such as ammonium chloride is added to maintain the stability and pH control of the bath. Ni deposition rate is found to vary with temperature, time, utilization of bath. The experimental result shown that Ni layer by SEM (scanning electron microscopy) and EDX analysis. Finally, plated Ni/Cu contact solar cell result in an efficiency of 17.69% on $2{\times}2\;cm^2$, Cz wafer.

• 마이크로전자및패키징학회지
• /
• 제29권2호
• /
• pp.73-79
• /
• 2022

본 연구에서는 최근 저온접합 소재로 각광받고 있는 Ga과 대표적인 전극 물질인 Cu와의 반응연구를 실시하여 저온 솔더링 적용시 필요한 정보들을 확인하고자 하였다. 80-200℃ 온도범위에서 Ga과 Cu/Au 기판을 반응시켜 계면반응 및 금속간화합물(IMC) 성장을 관찰하고 분석하였다. 반응계면에서 성장하는 주요한 IMC는 CuGa₂ 상이었으며 그 상부에는 작은 입자크기를 가지는 AuGa₂ IMC 그리고 하부에는 얇은 띠 형상의 Cu₉Ga₄ IMC가 형성되었다. CuGa₂ 입자들은 scallop 형상을 보이며 Cu₆Sn₅ 성장의 경우와 비슷하게 반응시간이 증가함에 따라서 큰 형상변화없이 입자 크기가 증가하였다. CuGa₂ 성장기구를 분석한 결과 120-200℃ 온도범위에서 시간지수는 약 3.0으로 산출되었고, 활성화에너지는 17.7 kJ/mol로 측정되었다.

• 한국세라믹학회지
• /
• 제53권6호
• /
• pp.682-688
• /
• 2016

In $TiO_2$-CuO systems, low-temperature sinterability was investigated by a conventional sintering method. Sintering temperatures were set at under $950^{\circ}C$, at which the volume diffusion is inactive. The temperatures are less than the melting point of Ag ($961^{\circ}C$), which is often used as an internal conductor in low-temperature co-fired ceramic technology. To optimize the amount of CuO dopant, various dopant contents were added. The optimum level for enhanced densification was 2 wt% CuO. Excess dopants were segregated to the grain boundaries. The segregated dopants supplied a high diffusion path, by which grain boundary diffusion improved. At lower temperatures in the solid state region, grain boundary diffusion was the principal mass transport mechanism for densification. The enhanced grain boundary diffusion, therefore, improved densification. In this regard, the results of this study prove that the sintering mechanism was the same as that of activated sintering.

• 한국재료학회지
• /
• 제22권7호
• /
• pp.329-334
• /
• 2012

Two types of nanoclusters, termed Cluster (1) and Cluster (2) here, both play an important role in the age-hardening behavior in Al-Mg-Si alloys. Small amounts of additions of Cu and Ag affect the formation of nanoclusters. Two exothermic peaks were clearly detected in differential scanning calorimetry(DSC) curves by means of peak separation by the Gaussian method in the base, Cu-added, Ag-added and Cu-Ag-added Al-Mg-Si alloys. The formation of nanoclusters in the initial stage of natural aging was suppressed in the Ag-added and Cu-Ag-added alloys, while the formation of nanoclusters was enhanced at an aging time longer than 259.2 ks(3 days) of natural aging with the addition Cu and Ag. The formation of nanoclusters while aging at $100^{\circ}C$ was accelerated in the Cu-added, Ag-added and Cu-Ag-added alloys due to the attractive interaction between the Cu and Ag atoms and the Mg atoms. The influence of additions of Cu and Ag on the clustering behavior during low-temperature aging was well characterized based on the interaction energies among solute atoms and on vacancies derived from the first-principle calculation of the full-potential Korrinaga-Kohn-Rostoker(FPKKR)-Green function method. The effects of low Cu and Ag additions on the formation of nanoclusters were also discussed based on the age-hardening phenomena.

• 한국재료학회지
• /
• 제23권7호
• /
• pp.385-391
• /
• 2013

The influence of Cu and Ni on the ductile-brittle transition behavior of metastable austenitic Fe-18Cr-10Mn-N alloys with N contents below 0.5 wt.% was investigated in terms of austenite stability and microstructure. All the metastable austenitic Fe-18Cr-10Mn-N alloys exhibited a ductile-brittle transition behavior by unusual low-temperature brittle fracture, irrespective of Cu and/or Ni addition, and deformation-induced martensitic transformation occasionally occurred during Charpy impact testing at lower temperatures due to reduced austenite stability resulting from insufficient N content. The formation of deformation-induced martensite substantially increased the ductile-brittle transition temperature(DBTT) by deteriorating low-temperature toughness because the martensite was more brittle than the parent austenite phase beyond the energy absorbed during transformation, and its volume fraction was too small. On the other hand, the Cu addition to the metastable austenitic Fe-18Cr-10Mn-N alloy increased DBTT because the presence of ${\delta}$-ferrite had a negative effect on low-temperature toughness. However, the combined addition of Cu and Ni to the metastable austenitic Fe-18Cr-10Mn-N alloy decreased DBTT, compared to the sole addtion of Ni or Cu. This could be explained by the fact that the combined addition of Cu and Ni largely enhanced austenite stability, and suppressed the formation of deformation-induced martensite and ${\delta}$-ferrite in conjunction with the beneficial effect of Cu which may increase stacking fault energy, so that it allows cross-slip to occur and thus reduces the planarity of the deformation mechanism.

• 청정기술
• /
• 제8권3호
• /
• pp.111-117
• /
• 2002

동을 담지한 모더나이트를 이용하여 고정층 연속흐름 반응기에서 NO 분해와 CO에 의한 NO 환원을 실시하였다. NO 분해에서는 많은 동함량에서 $Cu^{\circ}/HM$이 CuO/HM보다 높은 분해 활성을 나타내었다. 이것은 $Cu^{\circ}/HM$과 CuO/HM에 존재하는 $Cu^{2+}$이온의 양과 CuO의 환원성 등의 차이에 관련된다고 보인다. NO 환원에서는 적은 동함량에서 Cuo/HM이 CuO/HM보다 높은 환원 활성을 나타내었다. 이것은 $Cu^{\circ}/HM$과 CuO/HM에 존재하는 CuO의 환원성과 입자 크기 등의 차이에 관련된다고 보인다.