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http://dx.doi.org/10.4191/kcers.2016.53.6.682

Low-temperature Sintering Behavior of TiO2 Activated with CuO  

Paek, Yeong-Kyeun (The Center of Biomedical Materials and Biotechnology, Department of Materials Science and Engineering, Andong National University)
Shin, Chang-Keun (Youngpoong Heat Treatment Company)
Oh, Kyung-Sik (The Center of Biomedical Materials and Biotechnology, Department of Materials Science and Engineering, Andong National University)
Chung, Tai-Joo (The Center of Biomedical Materials and Biotechnology, Department of Materials Science and Engineering, Andong National University)
Cho, Hyoung Jin (NanoFab and BioMEMS Lab, Department of Mechanical and Aerospace Engineering, University of Central Florida)
Publication Information
Journal of the Korean Ceramic Society / v.53, no.6, 2016 , pp. 682-688 More about this Journal
Abstract
In $TiO_2$-CuO systems, low-temperature sinterability was investigated by a conventional sintering method. Sintering temperatures were set at under $950^{\circ}C$, at which the volume diffusion is inactive. The temperatures are less than the melting point of Ag ($961^{\circ}C$), which is often used as an internal conductor in low-temperature co-fired ceramic technology. To optimize the amount of CuO dopant, various dopant contents were added. The optimum level for enhanced densification was 2 wt% CuO. Excess dopants were segregated to the grain boundaries. The segregated dopants supplied a high diffusion path, by which grain boundary diffusion improved. At lower temperatures in the solid state region, grain boundary diffusion was the principal mass transport mechanism for densification. The enhanced grain boundary diffusion, therefore, improved densification. In this regard, the results of this study prove that the sintering mechanism was the same as that of activated sintering.
Keywords
$TiO_2$; Dielectric ceramics; Activated sintering; Low-temperature sintering; Grain boundary diffusion;
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