• 마이크로전자및패키징학회지
• /
• 제25권4호
• /
• pp.101-104
• /
• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• 한국전기전자재료학회논문지
• /
• 제23권11호
• /
• pp.864-868
• /
• 2010

Among LTCC material for substrate, the crystallized anorthite system was mainly studied as high strength material. However, specific factors that have affected on strength of material were studied insufficiently on anorthite system. In this study, the composition of anorthite glass was Ca-Al-Si-Zn-O. The changes of phase and microstructure were observed with the amount and the particle size of glass and the sintering temperature. It was studied that the factors affected on the strength of material. Phases of anorthite and $ZnAl_2O_4$ were formed with the increase of sintering temperature. The $Al_2O_3$ phase was increased with $Al_2O_3$ amount, acted as filler, and the strength of material is increased with $Al_2O_3$ phase. But phases of anorthite and $ZnAl_2O_4$ didn't affect on the strength of material. In the case of 60 vol% glass amounts and below $3.2\;{\mu}m$ of glass particle size, the strength of material was decreased. It is thought that the decrease of strength was due to non-homogeneous mixing between glass powder and filler.

• 한국재료학회지
• /
• 제26권1호
• /
• pp.54-60
• /
• 2016

We have investigated the crystallization mechanism of the lithium disilicate ($Li_2O-2SiO_2$, LSO) glass particles with different sizes by isothermal and non-isothermal processes. The LSO glass was fabricated by rapid quenching of melt. X-ray diffraction and differential scanning calorimetry measurements were performed. Different crystallization models of Johnson-Mehl-Avrami, modified Ozawa and Arrhenius were adopted to analyze the thermal measurements. The activation energy E and the Avrami exponent n, which describe a crystallization mechanism, were obtained for three different glass particle sizes. Values of E and n for the glass particle with size under $45{\mu}m$, $75{\sim}106{\mu}m$, and $125{\sim}150{\mu}m$, were 2.28 eV, 2.21 eV, 2.19 eV, and ~1.5 for the isothermal process, respectively. Those values for the non-isothermal process were 2.4 eV, 2.3 eV, 2.2 eV, and ~1.3, for the isothermal process, respectively. The obtained values of the crystallization parameters indicate that the crystallization occurs through the decreasing nucleation rate with a diffusion controlled growth, irrespective to the particle sizes. It is also concluded that the smaller glass particles require the higher heat absorption to be crystallized.

• 한국분말재료학회지
• /
• 제19권6호
• /
• pp.412-415
• /
• 2012

The quartz glasses were prepared by sintering of fumed silica powders and the effect of OH concentration on their surface on sintering was studied. Through the firing process, the fumed silica was crystallized from 1180 to $1260^{\circ}C$ region. The amount of hydroxyl group decreased with increase in calcination temperature and consequently the crystallization was prevented. A transparent quartz glass was obtained from fumed silica, previously calcined at $1000^{\circ}C$, by the sintering at $1250^{\circ}C$ for 1 h.

• 한국세라믹학회지
• /
• 제26권1호
• /
• pp.13-20
• /
• 1989

After sintering Si3N4 containing 20wt% of variable composition ratio of Y2O3 and Al2O3 at 1$600^{\circ}C$, the specimens were annealed at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 5, 10, 15 hours in order to crystallize the remanining oxynitride glass phases. The main grain-boundary crystalline phases in the Si3N4-Y2O3-Al2O3 system were melilite and YAG. By annealing 15hrs. at 125$0^{\circ}C$, almost all of the glasses were crystallized. During the growth of melilite, lattice volyume of $\beta$-Si3N4 was increased as Al3+ and O2- ions in the oxynitride glass diffuse into $\beta$-Si3N4 lattice, but during the growth of YAG, lattice volume of $\beta$-Si3N4 was decreased by reverse diffusion of Al3+ and O2- ions. In case of crystallization of glass phase to melilite, thermal expansion of sample was decreased, but in case of crystallization to YAG, inverse phenomen on was observed.

• 한국세라믹학회지
• /
• 제20권3호
• /
• pp.236-242
• /
• 1983

The purpose of present study is to find the structures physical properties and their inter-relations in the system of (60-x) PbO.xMO.$40B_2O_3$ glasses where MO represents for ZnO and CdO. The experiments such as differential thermal analysis infrared spectral analysis X-ray diffraction analysis density and thermal expansion measurements have been done. From infrared spectral analysis the structural units of glasses and the corresponding crystallized glasses were com-posed of $BO_3$ triangles and $BO_4$ tetrahedra. These basic units found in $PbO-B_2O_3$ binary glass system did not charge even though the divalent metallic oxides were substituted for PbO. The structures of these ternary glasses were more coalescenced than $PbO-B_2O_3$ binary glass system. This fact was supported bydecrease in thermal expansion coeffici-ent and molar volume with substitution of divalent metallic oxide for PbO. Crystalline phases obtained from the heat treatment of the $PbO-ZnO-B_2O_3$ glasses were 4PbO.2ZnO.$5B_2O_3$ PbO.2ZnO.$B_2O_3$ and unknown phases.

• 한국전기전자재료학회논문지
• /
• 제11권9호
• /
• pp.711-717
• /
• 1998

BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.

• 한국세라믹학회지
• /
• 제32권2호
• /
• pp.239-247
• /
• 1995

Chalcogenide glasses with compositions of Ge10Se90-xTex(X=0~50 at.%) were prepared in order to investigate the effects of Te substitution on the transmission characteristics of Ge-Se glasses in the 8~12 ${\mu}{\textrm}{m}$ wavelength region. Absorption coefficients were observed to decrease with Te addition, indicating the improved transmission capabilities of Ge-Se-Te glasses as compared to binary Ge-Se glasses. XRD analysis of crystallized glasses suggested the formation of weaker Se-Te and/or Te-Te bonds with addition of Te substituting for Se in stronger Se-Se bonds. Incorporation of Te in excess of 20at% resulted in the formation of hexagonal Te phases when crystallized. It is speculated that the presence of Te-Te bonds with highly metallic bond character resulted in the enhanced crystallization tendencies of glasses. Fromation of Te-rich chains through gradual replacement of Se-Se with Se-Te and/or Te-Te bonds was further supported by decreases in glass transition and crystallization temperatures.

• Applied Microscopy
• /
• 제43권4호
• /
• pp.173-176
• /
• 2013

The oxidation behavior of the crystallized $Al_{87}Ni_3Y_{10}$ alloy has been investigated with an aim to compare with that of the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The oxidation at 873 K occurs as follows: (1) growth of an amorphous aluminum-yttrium oxide layer (~10 nm) after heating up to 873 K; and (2) formation of $YAlO_3$ crystalline oxide (~220 nm) after annealing for 30 hours at 873 K. Such an overall oxidation step indicates that the oxidation behavior in the crystallized $Al_{87}Ni_3Y_{10}$ alloy occurs in the same way as in the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The simultaneous presence of aluminum and yttrium in the oxide layer significantly enhances the thermal stability of the amorphous structure in the oxide phase. Since the structure of aluminum-yttrium oxide is dense due to the large difference in ionic radius between aluminum and yttrium ions, the diffusion of oxygen ion through the amorphous oxide layer is limited thus stabilizing the amorphous structure of the oxide phase.

• 한국세라믹학회지
• /
• 제40권3호
• /
• pp.213-218
• /
• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.