1 |
M. Yoshimura, W. L. Suchanek, T. Watanabe, and B. Sakurai, 'In Situ Fabrication of Layered Thin Films by Hydrothermal-electrochemical Technique,' J. Euro. Ceram. Soc., 19 1353-59 (1999)
DOI
ScienceOn
|
2 |
Y. Gao, Y. Masuda, T. Yonezawa, and K. Koumoto, 'Prepa-ration of Thin Film by the Liquid Phase Deposition Method,' Mater. Sci. and Eng. B., in press
|
3 |
P. C. Joshi and S. B. Krupanidhi, 'Structural and Electrical Characteristics of Thin Films for Dynamic RandomAccess Memory Applications,' J. Appl. Phys.,73 7627-34 (1993)
DOI
ScienceOn
|
4 |
M. N. Kamalasanan, N. D. Kumar, and S. Chandra, 'Struc-tural, Optical, and Dielectric Properties of Sol-gel Derived Thin Films,' J. AppI. Phys., 74 679-86 (1993)
DOI
ScienceOn
|
5 |
T. Kunihisa, S. Yamamoto, M. Nishijima, T. Yokohama, M Nishitsuji, K. Nishii, and O. Ishikawa, 'Low Power Dissi-pation Single-supply MMIC Power Amplifier for 5.8 GHz Electronic Toll Collection System,' IEICE Trans. EIectron., E82-C 1921-27 (1999)
|
6 |
M. K. Lee, K. W. Tung, C. C. Cheng, H. C. Liao, and C. M. Shih, 'Deposition of Barium Titanate Films on Silicon by Barium Fluorotitanate Powder,' J. Phys. Chem. B, 106 4963-66 (2002)
DOI
ScienceOn
|
7 |
F. Tcheliebou, H. S. Ryu, C. K. Hong, W. S. Park, and S. Baik, 'On the Microstructure and Optical Properties of Films,' Thin Solid Films, 305 30-4 (1997)
DOI
ScienceOn
|
8 |
G. A. Barbosa, R. S. Katiyar, and P. S. Porto, 'Optical Prop-erties of at High Temperatures,' J. Opt. Soc. Am., 68 610-14 (1978)
DOI
ScienceOn
|
9 |
A. F. Tasch, Jr. and L. H. Parker, 'Memory Cell and Tech-nology Issues for 64- and 256-Mbit One-transistor Cell MOSD DRAMs,' Proc. IEEE, 77 374-88 (1989)
DOI
ScienceOn
|
10 |
K. Morito, H. Wakabayashi, T. Suzuki, and M. Fujimoto, 'Fabrication Technology of High-dielectric Thin Film Capacitors for Microwave Circuits,' J. Ceram. Soc. Jpn., 110 408-15 (2002)
DOI
ScienceOn
|
11 |
H. Funakubo, Y. Takeshima, D. Nagano, A. Saiki, K. Shi-nozaki, and N. Mizutani, 'Deposition Conditions of Thin Films on Various Substrates by CVD and their Dielec-the Properties,' Thin SoIid Films, 334 71-6 (1998)
DOI
ScienceOn
|
12 |
J. C. Tauc, Amorphous and Liquid Semiconductor, p.159 (Plenum, New York, 1974)
|
13 |
S. Zollner, A. A. Demkov, R. Liu, P. L. Fejes, R. B. Gregory, P. Alluri, J. A. Curless, Z. Yu, J. Ramdani, R. Droopad, T. E. Tiwald, J. N. Hilfiker, and J. A. Woollam, 'Optical Prop-ei-ties of Bulk and Thin-film on Si and Pt,' J. Vac. Sci. Technol. B, 18 2242-54 (2000)
DOI
ScienceOn
|
14 |
K. Frohlich, D. Machajdik, A. Rosova, F. Weiss, B. Bochu, J. P. Senateur, and I. Vavra, 'Growth of Thin Epi-taxial Films by Aerosol MOCVD,' Thin Solid Films, 260 187-91 (1995)
DOI
ScienceOn
|
15 |
M. Vehkamaki, T. Hanninen, M. Ritala, M. Leskela, T.Sajavaara, and J. Keinonen, 'Atomic Layer Deposition of Thin Films from a Novel Strontium Precursor-Strontium-bis(tri-isopropyl cyclopentadienyl),' Chem. Vapor Deposition, 7 75-80 (2001)
DOI
|
16 |
Y. Gao, Y. Masuda, T. Yonezawa, and K. Koumoto, 'Site-selective Deposition and Micropatterning of Thin Film on Self-assembled Monolayers by the Liquid Phase Deposition Method,' Chem. Mater., 14 [12] 5006-14 (2002)
DOI
ScienceOn
|
17 |
L.-J. Meng and M. P. Dos Santos, 'Investigation of Tita-nium Oxide Films Deposited by D. C. Reactive Magnetron Sputtering in Different Sputtering Pressures,' Thin Solid Films, 226 22-9 (1993)
DOI
ScienceOn
|
18 |
P. Y. Yu and M. Cardona, Fundamentals of Semiconduc-tors, p.343 (Springer, Berlin 1996)
|
19 |
H. W. Gandy, 'Optical Transmission of Heat-treated Stron-tium Titanate,' Phys. Rev., 113 795-800 (1959)
DOI
|
20 |
D. Bao, X. Yao, N. Wakiya, K. Shinozaki, and N. Mizutani, 'Band-gap Energies of Sol-gel-derived Thin Films,' AppI. Phys. Lett., 79 3767-69 (2001)
DOI
ScienceOn
|
21 |
K. V. Benthem, C. Elsasser, and R. H. French, 'Bulk Elec-tronic Structure of : Experiment and Theory,' J. Appl. Phys., 90 6156-64 (2001)
DOI
ScienceOn
|