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http://dx.doi.org/10.4191/KCERS.2003.40.3.213

Band Gap Energy of SrTiO3Thin Film Prepared by the Liquid Phase Deposition Method  

Gao, Yanfeng (Department of Applied Chemistry, Graduate School of Engineering, Nagoya University)
Masuda, Yoshitake (Department of Applied Chemistry, Graduate School of Engineering, Nagoya University)
Koumoto, Kunihito (Department of Applied Chemistry, Graduate School of Engineering, Nagoya University)
Publication Information
Journal of the Korean Ceramic Society / v.40, no.3, 2003 , pp. 213-218 More about this Journal
Abstract
Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.
Keywords
Band gap energy; Strontium titanate; Liquid Phase deposition; Crystallinity; Morphology;
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