• 한국재료학회지
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• 제13권3호
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• pp.185-190
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• 2003

Titanium dioxide films were prepared by RF sputtering method on glass for various oxygen partial pressures at power 270 W. The crystal structure, photocatalytic property and the hydrophilicity of $TiO_2$thin film the deposition conditions were investigated. Crystallized anatase phase was observed in $TiO_2$film deposited at the ratio of oxygen partial pressure 10% and 20% for 2 hrs. As the increase of deposition time, the grain size and void size of $TiO_2$film have increased and also $V_2$films have been good crystallinity. The ultraviolet-visible light absorption of $TiO_2$films was increased with increasing of deposition time and occured chiefly at the wavelength between 280 and 340 nm. The absorption band was shifted to a longer wave length as deposition time increased. Water contact angle on the X$TiO_2$film of anatase structure was decreased with increasing ultraviolet illumination time and became lower than $11^{\circ}$ from $83^{\circ}$. When hydrophilic $TiO_2$film changed by enough ultraviolet illumination was stored in the dark, the film surface gradually turned to hydrophobic state.

• 한국환경과학회지
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• 제24권5호
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• pp.699-708
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• 2015

This study was performed to identify the state of the exposure and characteristics of pollutants by each process at 4 casting sites located in Gyeongsang-do from April to November 2013. The concentrations of methanol, crystallized silica glass, formaldehyde and phenol were analyzed by different process - casting process, molding process, core process, and shakeout & finishing process. The highest concentration of methanol was found in casting and molding process, whereas the highest concentration of crystalline quartz(Silica) was observed in core process. The most oxidized steel dusts and the highest concentration of fume were found in shakeout & finishing process. As a result of this study, those labors working at the casting site were found to be constantly exposed to various forms of hazardous chemicals; therefore, it is considered that this is the time to manage and plan how to reduce them. In addition, it is required to thoroughly manage the local exhauster, and improve the process and working environment to reduce various forms of hazardous chemicals.

• 한국정밀공학회지
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• 제22권3호
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• pp.115-122
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• 2005

As the digital TV markets rapidly growing, many manufacturers introduce large size flat screen TV units. There are two different display types available to large size models which are plasma and TFT-LCD. Since both are constructed with thin large panels that are mostly fragile to even moderate mechanical shock inputs. Some large size panels are severely resonated by the acoustic sound generated TV which deteriorates video quality. Recognizing the potential problems of large displays, accurate measurement of the panels is to be an essential task for the reliable design. Measurement of mechanical properties of a thin large crystallized panel such as TFT-LCD display with traditional material testing equipments is challenging. Since TFT-LCDs are constructed with combination of brittle glass panels, polymer sheets, and liquid crystal, their properties are not only anisotropic but also usually non-linear. Accurate measurement of the properties often requires very expensive facilities. Especially when the size of the test sample is as large as 40-inch or wider, direct measurement cost is prohibitive. Even worse, machining of the large TFT-LCD to make a smaller size specimen that could be fit into a material tester is not possible because of liquid crystal leakage. A new method fer the measurement of elastic modulus of large TFT-LCD panel is presented in this article. The suggested method provides a simple, economic, and user-friendly way fer measuring the elastic modulus of large panels with considerable level of accuracy.

• 한국진공학회지
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• 제14권1호
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• pp.24-28
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• 2005

a-Si을 poly-Si으로 결정화하는 전형적인 방법으로는 고상결정화(Solid Phase Crystallization, SPC)가 있다［1-3］. 고상결정화는 균일한 공정특성과 생산비가 저렴하다는 장점이 있으나, 고상결정화 공정에서 높은 공정온도와 긴 공정 시간은 유리 기판의 손상으로 인해 적용되기 어렵다. 본 논문에서는 고상결정화의 저온공정과 짧은 공정시간을 위해 교번자장결정화(Alternating Magnetic Field Crystallization, AMFC) 시스템 내에서 결정화하는 동안 교번자장(Alternating Magnetic Field)을 적용하는 새로운 방법을 소개한다. 고상결정화의 경우, 열처리 시간은 570℃에서 24시간이 소요되었으나, 교번자장결정화의 경우, 같은 온도에서 20분이 소요되었다.

• 한국재료학회지
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• 제4권6호
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• pp.611-619
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• 1994

본 연구는 Lithium Alumino Silicate 기본계에 핵형성제로 $TiO_{2}$와 $ZrO_{2}$를 사용하여 기본유리를 제조하고 열처리에 따른 $\beta$-quartz고용체의 미결정 형성과정을 분석하였다. 또한 $\beta$-quartz고용체의 형성에 따른 열적 특성과 광학적 특성을 비교하였다. 그 결과, 기본 유리의 열팽창 계수는 $45\sim 55 \times 10^{-7} \textrm{cm}/^{\circ}C$였으며, 결정화 시편의 열팽창 계수는$ -8\sim +8 \times 10^{-7}\textrm{cm}/^{\circ}C$ ($25^{\circ}C \sim 525^{\circ}C$)였다. $900^{\circ}C$이하에서 열처리된 Glass Cermics의 결정은 $\beta$-quartz 고용체가 형성되었고, 결정의 크기가 0.21$\mu \textrm{m}$를 초과하지 않았으며, 최고의 투광도는 80%이상을 나타냈다. RO성분을 MgO와 ZnO를 사용한 경우보다 MgO 단독으로 사용한 시편을 결정입자의 크기가 온도에 의존하지 않고 일정함을 나타냈으며, ZnO의경우는 입자의 크기가 최소값(0.18$\mu \textrm{m}$)을 보이며 온도의존성이 크게 나타냈다.

• 한국재료학회지
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• 제4권1호
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• pp.90-96
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• 1994

플라즈마 CVD(PECVFD)장치로 금속유기물인 Diethylzinc와 $N_{2}O$를 합성하여 $300^{\circ}C$이하의 낮은 기판 온도에서 ZnO 박막을 증착하여, 증착변수가 박막의 증착속도 및 결정구조에 미치는 영향을 알아 보았다. 기판 온도 $150^{\circ}C$에서부터 이미 결정화된 ZnO 박막의 증착이 가능했으며, $200^{\circ}C$이상에서 X-ray rocking curve분석결과, 표준편차값($\delta$)이 6˚ 미만의 c축 배향성이 뛰어난 ZnO박막이 유리 기판위에 증착되었다. 기판온도오 인가된 rf전력에 의한 증착속도의 변화 양상은 매우 다양하였으며, 특히 결정화에 따른 증착속도 변화의 전이점이 관찰되었다. 200 W와 250W의 rf 전력에서 증착된 박막의 경우 활성화 에너지는 각각 3.1 KJ/mol과 1.9 KJ/mol이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.270-271
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• 2008

Antimony (6 wt%) doped tin oxide (ATO) films to improve conductivity were deposited on 7059 coming glass by RF magnetron sputtering method for application to transparent electrodes. The ATO film was deposited at a working pressure of 5 mTorr and RF power of 175 W. We investigated the effects of the post-annealing temperature on structural, electrical and optical properties of the ATO films. The films were annealed at temperatures ranging from $300^{\circ}C$ to $600^{\circ}C$ in step of $100^{\circ}C$ using RTA equipment in vacuum ambient. X-ray diffraction (XRD) measurements showed the ATO films to be crystallized with a strong (101) preferred orientation as the annealing temperature increased. Electrical resistivity decreased significantly with annealing temperatures up to $600^{\circ}C$. ATO film annealed at temperature of $600^{\circ}C$ showed the lowest resistivity of $5.6\times10^{-3}\Omega$-cm. Optical transmittance increased significantly with annealing temperatures up to $600^{\circ}C$. The highest transmittance was 90.8 % in the visible range from 400 to 800 nm.

• 한국세라믹학회지
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• 제40권12호
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• pp.1197-1201
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• 2003

대기 중에서 침전이 생기지 않고 코팅에 적합한 나노크기 Au 미립자가 분산된 ZrO$_2$ 용액을 제조하여, 딥-코팅법으로 SiO$_2$ 유리기판 위에 박막을 제조했다. 이 박막을 열처리하여 열분석, 엑스선 회절분석, 분광분석, 원자력간 현미경, 주사전자현미경 및 투과전자현미경 관찰 등을 통하여 박막의 특성을 조사하였다. ZrO$_2$ 박막은 50$0^{\circ}C$에서 정방정상으로 결정전이가 관찰되었고, 박막의 두께는 약 100nm였다. 분산된 입자의 크기는 약 15∼40nm이며, 표면 거칠기는 0.84nm로 우수한 막질을 나타냈다. 그리고 Au 입자의 표면플라즈마 공명에 의한 흡수피크를 630∼670nm 파장범위에서 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.398.1-398.1
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• 2014

The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.

• 공업화학
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• 제7권3호
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• pp.433-442
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• 1996

분자량이 큰 Poly(ethylene oxide)[PEO] 고분자에 $LiClO_4$, $LiCF_3SO_3$ 등의 리튬염과 ethylene carbonate(EC), propylene carbonate(PC) 등의 가소제를 고정화시킨 고분자 전해질의 전기화학적 특성 및 물리적 성질을 조사하였다. 가소제가 첨가된 PEO-Li계 고분자 전해질은 상온에서 $10^{-4}S/cm$의 이온 전도도를 보였고 4.5 V(vs. $Li^+/Li$)까지 높은 전기화학적인 안정성을 나타냄으로써 리튬 2차전지에 적용 가능한 것으로 나타났다. 리튬염 및 가소제의 첨가에 따라 PEO의 결정상이 감소되었고 특히 $LiClO_4$, PC등이 $LiCF_3SO_3$, EC 등에 비하여 더 효과적인 것으로 나타났다. 리튬염의 농도가 증가할수록 고분자 전해질의 유리전이온도($T_g$)는 증가되었으며 반면에 융점온도($T_m$)는 감소하는 것으로 나타났다. 가소제가 첨가된 고분자 전해질은 $6^{\circ}C$에서 결정화 되었다.