• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.111-117
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• 2012

Dependencies of thermal properties on the crystallization behavior of $0.9CaMgSi_2O_6-0.1MgSiO_3$ glass-ceramics were investigated as a function of heat-treatment temperature from $750^{\circ}C$ to $950^{\circ}C$. The crystallization behavior of the specimens depended on the heat-treatment temperature, which could be evaluated by differential thermal analysis (DTA), Fourier transform infrared spectroscopy (FT-IR), and X-ray diffraction (XRD) analysis by the Rietveld-reference intensity ratio (RIR) combined procedure. With an increase of the heat-treatment temperature, the thermal conductivity and thermal diffusivity of the heat-treated specimens increased. These results could be attributed to the increase of crystallization with heat-treatment temperature. However, the specific heat capacity of the heat-treated specimens was not affected by the heat-treatment temperature. The thermal conductivities measured from $25^{\circ}C$ to $100^{\circ}C$ were also discussed for application to lighting-emitting diode (LED) packages and substrate materials.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.302-307
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• 2000

The objective of this study was to investigate the sintering behavior, crystallization characteristic of glass-ceramic and optimal sintering condition on the glass/ceramic composite for fabricating substrate of LTCC. Glass/ceramic composite was made from alumina powder and glass frit, which was composed of SiO2-TiO2-RO-PbO/(R: Ba, Sr, Ca), and was sintered for 0, 30, 60minutes in the temperature range from 700$^{\circ}C$ to 1000$^{\circ}C$. Properties of frit and glass/ceramic compsoite were analyzed by DTA, XRD, SEM and Network Analyzer and so on. Main sintering mechanism was densification occurred above 730$^{\circ}C$ by viscous flow and crystallization starting about 780$^{\circ}C$ affected sintering also. So viscous flow was affected by sintering temperature, duration time, and creation of crystallization phase etc. From this study, it was possible to fabricate glass/ceramic composite by changing sintering temperature and duration time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.529-532
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• 1997

We studied the crystallization of a-Si:H thin film. Multi-crystallized Si films are preferred in many applications such as FPD, solar cells, RAM, and integrated circuits. Because most of these applications require a low temperature process, we investigated a crystallization of a-Si:H using a Cd layer. A metal Cd shows an eutectic point at a temperature of 321$^{\circ}C$. This paper present Cd layer assisted crystallization of a-Si:H film for the various grain growth Parameters such as anneal temperature, Cd layer thickness, and anneal time

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.33-39
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• 1997

The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.

• Fibers and Polymers
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• v.6 no.4
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• pp.284-288
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• 2005

Poly(ethylene terephthalate) was annealed at different temperature and pressure of supercritical carbon dioxide $(CO_2)$ using samples quenched from the melt. Crystallization and molecular relaxation behavior due to $CO_2-annealing$ of samples were investigated using differential scanning calorimetric and dynamic mechanical measurements. The glass transition and crystallization temperatures significantly decreased with increasing temperature and pressure of $CO_2$. The dynamic mechanical measurement of samples annealed at $150^{\circ}C$ in supercritical $CO_2$ showed three relaxation peaks, corresponding to existence of different amorphous regimes such as rigid, intermediate, and mobile domains. As a result, the mobile chains were likely to facilitate crystallization in supercritical state. It also led to the decreased modulus of $CO_2-annealed$ samples with increasing pressure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.210-214
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• 2002

The crystallization behavior of amorphous silicon (a-Si) film was investigated by using Cu-field aided lateral crystallization (Cu-FALC) process below $450^{\circ}C$. The lateral crystallization was induced from the Cu deposited region outside of pattern toward the Cu-free region inside of the pattern by applying an electric field during heat treatment. As expected, the lateral crystallization toward Cu-free region proceeded from negative toward positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species in the reaction between Cu and Si. Even at the annealing temperature of $350^{\circ}C$, the large dendrite-shaped branches were formed in the crystallized region and the polarity in the lateral crystallization was clearly observed. Consequently, we could successfully crystallize the a-Si at the temperature as low as $350^{\circ}C$ by an electric field of 30 V/cm with fast crystallization velocity of 12 $\mu$m/h.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.243-246
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• 1997

A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.58-63
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• 2010

The glass-ceramics made from the mixture of coal bottom ash, produced from a thermal power plant mixed with $Na_2O$ and $Li_2O$ was fabricated and their crystallization behavior was studied using a non-isothermal analyzing method. The temperature for 50% crystallization was higher than the exothermic peak temperature $T_p$ at DTA curve and the quickest crystallization temperature was much the same as $T_p$ as identified from the relationships of crystallized fraction and crystallization rate with temperature. By using Kissinger equation describing a crystallization behavior, the activation energy (262 kJ/mol), the Avrami constant (1.7) and the frequency ($5.7{\times}10^{16}/s$) for crystallization were calculated from which the nepheline crystal could be expected as showing an 1~2-dimensional surface crystallization behavior mainly with some bulk crystallization tendency at the same time. The actual observation of microstructure using SEM showed the considerable amount of surface crystals of dendrite and the bulk crystals with low fraction, so the prediction by the Kissinger equation was in accord with the crystallization behavior of glass-ceramics fabricated in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.42-45
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• 1992

The poly silicon thin films were prepared by solid phase crystallization at 600$^{\circ}C$ of amorphous silicon films deposited on Corning 7059 glass and (100) silicon wafer with thermally grown SiO$_2$substrate by plasma enhanced chemical vapor deposition with varying rf power, deposition temperature, total flow rate. Crystallization time, microstructure, absorption coefficients were investigated by RAMAN, XRD analysis and UV transmittance measurement. Crystallization time of amorphous silicon films was increased with increasing rf power, decreasing deposition temperature and decreasing total flow rate.

• Polymer(Korea)
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• v.27 no.2
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• pp.113-119
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• 2003

The thermal properties and crystallization behaviors of poly(ethylene terephthalate) (PET) were investigated by controlling the annealing conditions of PET sample, such as relative humidity, temperature, and time. The variations of moisture content, glass transition temperature ($T_g$) and cold crystallization temperature ($T_{\propto}$) were examined after annealing the PET sample. Subsequently crystallization process was performed with the annealed PET specimen, and then the degree of crystallinity and heat distortion temperature (HDT) of variously crystallized PET specimen were examined. Residual stress relaxation in the injection molded PET sample after annealing was also observed through polarized films. Moisture content in the PET specimen increased up to 6000 ppm with increasing the relative humidity, temperature, and time of annealing. $T_g$ and $T_{\propto}$ of the annealed PET specimen decreased with increasing moisture content. The degree of crystallinity increased as increasing moisture content in the PET specimen. However for same moisture content, the degree of crystallinity varied with annealing conditions. The relaxations of residual stress in the PET sample differed from annealing conditions, and the maximum degree of crystallinity increased with decreasing residual stress in the PET sample.