• Journal of Magnetics
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• v.7 no.1
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• pp.9-13
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• 2002

The dependences of microscopic magnetic domain on film thickness in unidirectional and isotropic exchange-coupled NiO/NiFe bilayers were investigated by magnetic force microscopy to better understand for exchange biasing. As NiO thickness increases, microscopic domain structure of unidirectional biased film changed to smaller and more complicated domains. However, for isotropic-coupled film a new cross type domain appeared with out-of plane magnetization orientation. The density of the cross domain is proportional to exchange biasing fields and the fact that the domain was originated by the strongest exchange coupling region was confirmed from the dynamic domain configuration during a magnetization cycle.

• Journal of Magnetics
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• v.7 no.3
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• pp.94-97
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• 2002

The dependence on nickel oxide thickness and a ferromagnetic layer thickness in unidirectional and isotropic exchange-coupled NiO/NiFe(Fe) bilayer films was investigated by magnetic force microscopy to better understand the relation between magnetic domain structure and exchange biasing at microscopic length scales. As the NiO thickness increased, the domain structure of unidirectional biased films formed smaller and more complex in-plane domains. By contrast, for the isotropically coupled films, large domains generally formed with increasing NiO thickness including a cross type domain with out-of plane magnetization orientation. The density of the cross domain is proportional to exchange biasing field, and the fact that the domain mainly originated from the strongest exchange coupled region was confirmed by imaging in an applied external field during a magnetization cycle.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.63-67
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• 2003

This paper proposes a new BLSA(Bit Line Sense Amplifier) for MRAM. Current BLSA employs a latch-type circuit to amplify a signal from the selected memory cell. The proposed BLSA simplifies the circuit by amplifying the signal using cross-coupled PMOS transistors. It shows the same operation speedas the latch-type BLSA in simulation and occupies only 85% of the area taken by the latch-type BLSA.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1085-1088
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• 2007

A new DC-DC converter was designed for gate driver circuit using low temperature poly-Si TFT technology. To achieve high efficiency and small area, we proposed a cross-coupled type DC-DC converter which converts 5V of input voltage to 9V of output voltage and supplies 120$\mu$A of current to load. Its efficiency is 92.9% and the area is reduced as much as 19% compared to the previously reported latch type DC-DC converter.

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.34-35
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• 2001

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.15 no.6
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• pp.543-550
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• 2003

In order to saving the energy for HVAC system of buildings, utilization of wind-induced cross ventilation is thought to be promising. However, utilization of natural ventilation alone is not sufficient for maintaining the human thermal-comfort such as in hot and humid regions. A hybrid air conditioning system with a controlled natural ventilation system, or combination of natural ventilation with mechanical air conditioning is thought to overcome the deficiency of wind-driven cross ventilation and to have significant effects on energy reduction. This paper describes a concept of hybrid system and propose a new type of hybrid system using radiational cooling with wind-induced cross ventilation. Moreover, a radiational cooling system is compared with an all-air cooling system. The characteristics of the indoor environment will be examined through CFD (Computational Fluid Dynamics) simulation, which is coupled with a radiation heat transfer simulation and with HVAC control in which the PMV value for the human model in the center of the room is controlled to attain the target value.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2011.10a
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• pp.130-135
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• 2011

A study of the bending-extension-transverse shear coupled random response of the composite beams with thin-walled open sections subjected to various types of concentrated and distributed random excitations is dealt with in this paper. First of all, equations of motion of thin-walled composite H-type cross-section beams incorporating a number of nonclassical effects of transverse shear and primary and secondary warping, and anisotropy of constituent materials are derived. On the basis of derived equations of motion, analytical expressions for the displacement response of the composite beams are derived by using normal mode method combined with frequency response function method.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.425-428
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• 2008

A new type of cross-coupled planar microwave filter using coupled microstrip square open-loop resonators diplexer pro-posed. A method for the rigorous calculation of the coupling coefficients of basic four pole electric and magnetic coupling structures encountered. Simple empirical models are derived for estimation of the coupling coefficients. Experiments are performed to verify the theory. And a method for diplexer matching is conjugate matching that has characteristic better than open matching method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.1 s.116
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• pp.31-36
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• 2007

In the RFID system, one of the important criteria of tag antenna performance is the detection distance. The most important factor determining the detection distance of the tag antenna is the Radar Cross Sections(RCS). In this paper, we propose a method to simply measure the RCS of the RFID tag antenna using two reader antennas(Tx and Rx) and a network analyzer. We estimate RCS' from the RCS equation based on the measured $S_{21}$ using the network analyzer. We compare the measured $S_{21}$ values with the calculated $S_{21}$ values and the simulated $S_{21}$ values using EM simulator. The used tag antennas are two kinds of dipole-type, metal-type, and an inductively-coupled type ones. In case of the dipole type, the measured, simulated and calculated values of the RCS are almost the same. In case of other types, we obtain the measured RCS values with a difference of about 3 dB.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1181-1184
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• 2003

This paper proposes a new Sense Amplifier for MRAM. Current Sense Amplifier employs a latch-type circuit to amplify a signal from the selected memory cell. The proposed Sense Amplifier simplifies the circuit by amplifying the signal using cross-coupled PMOS transistors. It shows the same operation speed as the latch-type Sense Amplifier in simulation and occupies only 85% of the area taken by the latch-type Sense Amplifier.