Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Sense Amplifier for 2T-2MTJ MRAM

2T-2MTJ MRAM의 Sense Amplifier

  • 홍승균 (중앙대학교 전자전기공학부) ;
  • 김인모 (중앙대학교 전자전기공학부) ;
  • 유혜승 (고려대학교 전자공학과) ;
  • 김수원 (고려대학교 전자공학과) ;
  • 송상헌 (중앙대학교 전자전기공학부)
  • Published : 2003.07.01
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Abstract

This paper proposes a new Sense Amplifier for MRAM. Current Sense Amplifier employs a latch-type circuit to amplify a signal from the selected memory cell. The proposed Sense Amplifier simplifies the circuit by amplifying the signal using cross-coupled PMOS transistors. It shows the same operation speed as the latch-type Sense Amplifier in simulation and occupies only 85% of the area taken by the latch-type Sense Amplifier.

Keywords