Study of Bit Line Sense Amplifier for MRAM

MRAM의 Bit Line Sense Amplifier에 대한 연구

  • 홍승균 (중앙대학교 전자전기공학부) ;
  • 김인모 (중앙대학교 전자전기공학부) ;
  • 유혜승 (고려대학교 전자공학과) ;
  • 김수원 (고려대학교 전자공학과) ;
  • 송상훈 (중앙대학교 전자전기공학부)
  • Published : 2003.10.01

Abstract

This paper proposes a new BLSA(Bit Line Sense Amplifier) for MRAM. Current BLSA employs a latch-type circuit to amplify a signal from the selected memory cell. The proposed BLSA simplifies the circuit by amplifying the signal using cross-coupled PMOS transistors. It shows the same operation speedas the latch-type BLSA in simulation and occupies only 85% of the area taken by the latch-type BLSA.

본 논문에서는 MRAM에서 사용될 수 있는 새로운 Bit Line Sense Amplifier(BLSA)를 제안하였다. 기존의 BLSA는 기본적으로 Latch형 회로를 사용하여 Memory Cell로부터의 신호를 증폭한다. 제안된 BLSA는 Cross-coupled PMOS 트랜지스터를 사용하여 회로를 단순화하였으며. 기존 BLSA의 약 85%정도의 작은 면적을 차지하면서도 시뮬레이션상에서는 같은 동작 속도를 보이고 있다.

Keywords

References

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