• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.7-9
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• 2007

Thin films of CrAlSiN were deposited on SKD11 tool steel substrate using Cr and AlSi cathodes by a cathodic arc plasma deposition system. The influence of process parameters on the deposited film properties were investigated. The oxidation characteristics of the films were studied at temperatures ranging from 800 and 1000+C up to 50 h in air. The films showed superhardness and good oxidation resistance..

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1989-1991
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• 1999

This paper presents characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-$(5{\sim}25%)N_2$). The physical and electrical characteristics of these films investigated with the thickness range $3500{\AA}$ of CrN thin films, annealing temperature $(100{\sim}300^{\circ}C)$ and annealing $(24{\sim}72hr)$. The optimized condition of CrN thin-film strain gauges were thickness range of $3500{\AA}$ and annealing condition($300^{\circ}C$, 48 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, ${\rho}=1147.65{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=$-186ppm/^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. And change in resistance after annealing for the CrN thin-films were quitely linear and stable.

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.135-141
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• 1994

With the variation of Cr content and $N_2$ flow ratio, the soft magnetic properties, corrosion resistance and reactivity of the sputtered nanocrystalline FeZrCrN thin flims were investigated. In case of FeZrCrN thin films, a saturation magnetization was decreased with increasing $N_2$ flow ratio. In addition, good soft magnetic properties were obtained at the flow ratio of 3% $N_2$. The $Fe_{64.9}Zr_{8.8}Cr_{5.8}N_{20.5}$ nanocrystalline thin film after annealing at $550^{\circ}C$ exhibited the saturation magnetization of 12.5kG, low coercivity of 0.4 Oe and high permeability of 2600 at 5 MHz. Films containing up to 7.5% Cr showed an enhanced corrosion resistance and reduced reactivity with the bonding glass without degradation of soft magnetic properties, although the saturation magnetization was decreased slightly with the Cr addtion.

• Journal of Surface Science and Engineering
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• v.49 no.6
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• pp.580-586
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• 2016

Cr-Si-Al-N coating with different Si content were deposited by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The deposition temperature was $300^{\circ}C$, and the gas ratio of $Ar/N_2$ were 9:1. The CrSi alloy and aluminum targets used for arc ion plating and sputtering process, respectively. Si content of the CrSi alloy targets were varied with 1 at%, 5 at%, and 10 at%. The phase analysis, composition and microstructural analysis performed using x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) including energy dispersive spectroscopy (EDS), respectively. All of the coatings grown with textured CrN phase (200) plane. The thickness of the Cr-Si-Al-N films were measured about $2{\mu}m$. The friction coefficient and removal rate of films were measured by a ball-on-disk test under 20N load. The friction coefficient of all samples were 0.6 ~ 0.8. Among all of the samples, the removal rate of CrSiAlN (10 at% Si) film shows the lowest values, $4.827{\times}10^{-12}mm^3/Nm$. As increasing of Si contents of the CrSiAlN coatings, the hardness and elastic modulus of CrSiAlN coatings were increased. The morphology and composition of wear track of the films was examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy, respectively. The surface energy of the films were obtained by measuring of contact angle of water drop. Among all of the samples, the CrSiAlN (10 at% Si) films shows the highest value of the surface energy, 41 N/m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.573-576
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromium nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5∼25 %)Na$_2$). The deposited CrN thin-films with thickness of 3577${\AA}$ and annealing conditions(300$^{\circ}C$, 48 hr) in Ar-10 % N$_2$deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Journal of Surface Science and Engineering
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• v.50 no.5
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• pp.339-344
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• 2017

Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.5
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• pp.307-311
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• 2009

In this study, TiCrN films were deposited on STS 316 Land Si (100) wafer by inductively coupled plasma (ICP) assisted D.C. magnetron sputtering. The effect R.F. power for ICP discharge on the mechanical properties of TiCrN films was investigated. XRD, XPS and FE-SEM were used for the structure analysis. Also the Micro-Knoop hardness tester and profilometer were used for measuring hardness of coatings and film stress respectively. As increasing the R.F. power for ICP discharge, thickness of coating was decreased from 1633 nm to 1288 nm but hardness was increased about $Hk_{5g}$ 4200 at 400 W. All of the XRD patterns showed (111), (200) and (220) peaks of TiCrN films. Surface morphology was studied using the profilometer. FE-SEM was used to know morphology and cross-section of the films. Structure of the films was changed dense as increased ICP power.

• Nuclear Engineering and Technology
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• v.50 no.5
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• pp.724-730
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• 2018

Chromium and chromium nitride were selected as potential barriers to prevent fuel-clad chemical interaction (FCCI) between the cladding and the fuel material. In this study, ferritic/martensitic HT-9 steel and misch metal were used to simulate the reaction between the cladding and fuel fission product, respectively. Radio frequency magnetron sputtering was used to deposit Cr and CrN films onto the cladding, and the gas flow rates of argon and nitrogen were fixed at certain values for each sample to control the deposition rate and the crystal structure of the films. The samples were heated for 24 h at 933 K through the diffusion couple test, and considerable amount of interdiffusion (max. thickness: $550{\mu}m$) occurred at the interface between HT-9 and misch metal when the argon and nitrogen were used individually. The elemental contents of misch metal were detected at the HT-9 through energy dispersive X-ray spectroscopy due to the interdiffusion. However, the specimens that were sputtered by mixed gases (Ar and $N_2$) exhibited excellent resistance to FCCI. The thickness of these CrN films were only $4{\mu}m$, but these films effectively prevented the FCCI due to their high adhesion strength (frictional force ${\geq}1,200{\mu}m$) and dense columnar microstructures.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.549-556
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• 2012

The tribological behavior of CrMoN films with respect to surface chemistry was investigated by using X-ray photoelectron spectroscopy (XPS). All of the films were prepared from a hybrid PVD system consisting of DC unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. The tribological property of the films was evaluated by a friction coefficient using a Ball-on-disk type tribometer. The chemistry of wear track was analyzed by energy dispersive spectroscopy (EDS) and XPS. The friction coefficient was measured to be 0.4 for the CrMoN film, which is lower than that of a monolithic CrN film. EDS and XPS results imply the formation of an oxide layer on the coating surface, which was identified as molybdenum oxide phases, known to be a solid lubricant during the wear test.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.15-20
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• 2003

NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.