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Effects of ICP Power on the Properties of TiCrN Films  

Cha, B.C. (School of Material Science and Engineering, University of Ulsan)
Kim, J.H. (School of Material Science and Engineering, University of Ulsan)
Lee, B.S. (School of Material Science and Engineering, University of Ulsan)
Kim, S.K. (School of Material Science and Engineering, University of Ulsan)
Kim, D.W. (School of Material Science and Engineering, University of Ulsan)
Kim, D. (School of Material Science and Engineering, University of Ulsan)
You, Y.Z. (School of Material Science and Engineering, University of Ulsan)
Publication Information
Journal of the Korean Society for Heat Treatment / v.22, no.5, 2009 , pp. 307-311 More about this Journal
Abstract
In this study, TiCrN films were deposited on STS 316 Land Si (100) wafer by inductively coupled plasma (ICP) assisted D.C. magnetron sputtering. The effect R.F. power for ICP discharge on the mechanical properties of TiCrN films was investigated. XRD, XPS and FE-SEM were used for the structure analysis. Also the Micro-Knoop hardness tester and profilometer were used for measuring hardness of coatings and film stress respectively. As increasing the R.F. power for ICP discharge, thickness of coating was decreased from 1633 nm to 1288 nm but hardness was increased about $Hk_{5g}$ 4200 at 400 W. All of the XRD patterns showed (111), (200) and (220) peaks of TiCrN films. Surface morphology was studied using the profilometer. FE-SEM was used to know morphology and cross-section of the films. Structure of the films was changed dense as increased ICP power.
Keywords
TiCrN; ICP; stress; XPS; XRD;
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