• 제목/요약/키워드: Coupled fixed point

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Existence and Uniqueness Results for a Coupled System of Nonlinear Fractional Langevin Equations

  • Sushma Basil;Santhi Antony;Muralisankar Subramanian
    • Kyungpook Mathematical Journal
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    • 제63권3호
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    • pp.437-450
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    • 2023
  • In this paper, we present a sufficient condition for the unique existence of solutions for a coupled system of nonlinear fractional Langevin equations with a new class of multipoint and nonlocal integral boundary conditions. We define a 𝓩*λ-contraction mapping and present the sufficient condition by identifying the problem with an equivalent fixed point problem in the context of b-metric spaces. Finally, some numerical examples are given to validate our main results.

EXISTENCE OF EVEN NUMBER OF POSITIVE SOLUTIONS TO SYSTEM OF FRACTIONAL ORDER BOUNDARY VALUE PROBLEMS

  • Krushna, B.M.B.;Prasad, K.R.
    • 충청수학회지
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    • 제31권2호
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    • pp.255-268
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    • 2018
  • We establish the existence and multiplicity of positive solutions to a coupled system of fractional order differential equations satisfying three-point boundary conditions by utilizing Avery-Henderson functional fixed point theorems and under suitable conditions.

Effects of Phenotypic Variation on Evolutionary Dynamics

  • Kang, Yung-Gyung;Park, Jeong-Man
    • Journal of the Korean Physical Society
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    • 제73권11호
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    • pp.1774-1786
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    • 2018
  • Phenotypic variation among clones (individuals with identical genes, i.e. isogenic individuals) has been recognized both theoretically and experimentally. We investigate the effects of phenotypic variation on evolutionary dynamics of a population. In a population, the individuals are assumed to be haploid with two genotypes : one genotype shows phenotypic variation and the other does not. We use an individual-based Moran model in which the individuals reproduce according to their fitness values and die at random. The evolutionary dynamics of an individual-based model is formulated in terms of a master equation and is approximated as the Fokker-Planck equation (FPE) and the coupled non-linear stochastic differential equations (SDEs) with multiplicative noise. We first analyze the deterministic part of the SDEs to obtain the fixed points and determine the stability of each fixed point. We find that there is a discrete phase transition in the population distribution when the probability of reproducing the fitter individual is equal to the critical value determined by the stability of the fixed points. Next, we take demographic stochasticity into account and analyze the FPE by eliminating the fast variable to reduce the coupled two-variable FPE to the single-variable FPE. We derive a quasi-stationary distribution of the reduced FPE and predict the fixation probabilities and the mean fixation times to absorbing states. We also carry out numerical simulations in the form of the Gillespie algorithm and find that the results of simulations are consistent with the analytic predictions.

EXISTENCE OF SOLUTIONS OF A CLASS OF IMPULSIVE PERIODIC TYPE BVPS FOR SINGULAR FRACTIONAL DIFFERENTIAL SYSTEMS

  • Liu, Yuji
    • Korean Journal of Mathematics
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    • 제23권1호
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    • pp.205-230
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    • 2015
  • A class of periodic type boundary value problems of coupled impulsive fractional differential equations are proposed. Sufficient conditions are given for the existence of solutions of these problems. We allow the nonlinearities p(t)f(t, x, y) and q(t)g(t, x, y) in fractional differential equations to be singular at t = 0, 1 and be involved a sup-multiplicative-like function. So both f and g may be super-linear and sub-linear. The analysis relies on a well known fixed point theorem. An example is given to illustrate the efficiency of the theorems.

ERROR ESTIMATES FOR A GALERKIN METHOD FOR A COUPLED NONLINEAR SCHRÖDINGER EQUATIONS

  • Omrani, Khaled;Rahmeni, Mohamed
    • 대한수학회보
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    • 제57권1호
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    • pp.219-244
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    • 2020
  • In this paper, we approximate the solution of the coupled nonlinear Schrödinger equations by using a fully discrete finite element scheme based on the standard Galerkin method in space and implicit midpoint discretization in time. The proposed scheme guarantees the conservation of the total mass and the energy. First, a priori error estimates for the fully discrete Galerkin method is derived. Second, the existence of the approximated solution is proved by virtue of the Brouwer fixed point theorem. Moreover, the uniqueness of the solution is shown. Finally, convergence orders of the fully discrete Crank-Nicolson scheme are discussed. The end of the paper is devoted to some numerical experiments.

광 섬유내의 광유도 위상격자가 형성되는 자기조직 역학에 관한 연구 (Self-Organized Dynamics of Photoinduced Phase Grating formation in Optical Fibers)

  • 안성혁
    • 한국광학회지
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    • 제4권4호
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    • pp.464-473
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    • 1993
  • 본 논문에서는 광섬유에 아르곤 레이저 빔이 입사될 때 생기는 위상격자 형성에 관한 역학을 다룬다. 간단한 쌍광자 표백모델(two-photon bleaching model)을 이용하여 위상격자가 시간이 지남에 따라 이상적인(ideal) 격자로 자기조직됨(self-organized)을 보인다. 광섬유의 각점에서의 시간에 따른 상태전개는 하나의 보편 매개변수(universial parameter)에 의해 나타내어지고 또한 이 광섬유계를 기술하는 연립편미분 방정식이 이 매개변수에 의해 연립 상 미분 방정식으로 간소화 된다. 이 연립 상 미분 방정식을 이용하여 위상격자가 자라나는 상태는 한 고정점(a fixed point)를 향해 가는 과정이고 이 고정점은 완벽히 위상맞춤(phase-matched)된 격자에 해당된다는 것을 보인다.

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Etching Characteristics of Au Thin Films using Inductively Coupled CF4 / Cl2 / Ar Plasma

  • Kim Dong-Pyo;Kim Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제4권3호
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    • pp.1-4
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    • 2003
  • The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

CF4/CI2/Ar유도 결합 플라즈마에 의한 gold 박막의 식각특성 (Etching Characteristics of Gold Thin Films using Inductively Coupled CF4/CI2/Ar Plasma)

  • 김창일;장윤성;김동표;장의구
    • 한국전기전자재료학회논문지
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    • 제16권7호
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    • pp.564-568
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    • 2003
  • The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

Etching Characteristics of Au Film using Capacitively Coupled CF4/Ar Plasma

  • Kim, Gwang-Beom;Hong, Sang-Jeen
    • 동굴
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    • 제82호
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    • pp.1-4
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    • 2007
  • In this paper, the etching of Au films using photoresist masks on Si substrates was investigated using a capacitively coupled plasma etch reactor. The advantages of plasma etch techniques over current methods for Au metalization include the ability to simplify the metalization process flow with respect to resist lift-off schemes, and the ability to cleanly remove etched material without sidewall redeposition, as is seen in ion milling. The etch properties were measured for different gas mixing ratios of CF4/Ar, and chamber pressures while the other conditions were fixed. According to statistical design of experiment (DOE), etching process of Au films was characterized and also 20 samples were fabricated followed by measuring etch rate, selectivity and etch profile. There is a chemical reaction between CF4 and Au. Au- F is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment.