• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.1
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• pp.22-26
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• 2003

Overlap Errors and side-lobes have been simultaneously solved by the rule-based correction using the rules extracted from test patterns. Lithography process parameters affecting attPSM lithography process have been determined by the fitting method to the real process data. The correction using scattering bars has been compared to the Cr shield method. The optimal insertion rule of the scattering bal's has made it possible to suppress the side-lobes and to enhance DOF at the same time. Therefore, in this paper, the solution to both side-lobe and overlap Error has been proposed using rule-based confection. Compared to the existing Cr shield method, the proposed rule-based correction with scattering bars can reduce the process complexity and time for mask production.

• Proceedings of the KAIS Fall Conference
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• 2002.05a
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• pp.106-108
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• 2002

반도체 physical layout design rule이 작아짐에 따라 Proximity effect와 overlay가 Pattern 구현에 크게 영향을 미치고 있다. Metal layer와 contact의 부족한 overlay margin으로 overlay 불량이 발생하고, 감소한 space margin으로 인해 bridge와 같은 문제가 나타난다. 따라서, resolution을 향상시키고, 최소한의 overlay margin을 확보함으로써 미세 pattern의 구현을 가능하게 한다. 이를 위해 OPC와 attPSM 같은 분해능향상기술이 사용된다. 그러나 attPSM의 사용은 원하지 않는 pattern이 생성되는 sidelobe와 같은 문제가 발생한다. 따라서 serial image simulation올 통해 추출한 rule을 rule-based correction에 적용하여 sidelobe현상을 방지한다. 그리고 overlay margin 부족으로 나타나는 문제는 metal layer와 contact overlap되는 영역의 line edge를 확장하고, rule checking을 통해 최소한의 space margin을 확보하여 해결한다 따라서 overlay error를 rule-based correction을 사용하여 효과적으로 방지한다.

• Journal of the Korea Society of Computer and Information
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• v.17 no.10
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• pp.25-33
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• 2012

In this paper, we propose a rule-based model to correct errors in a speech recognition result in the mobile device environment. The proposed model considers the mobile device environment with limited resources such as processing time and memory, as follows. In order to minimize the error correction processing time, the proposed model removes some processing steps such as morphological analysis and the composition and decomposition of syllable. Also, the proposed model utilizes the longest match rule selection method to generate one error correction candidate per point, assumed that an error occurs. For the purpose of deploying memory resource, the proposed model uses neither the Eojeol dictionary nor the morphological analyzer, and stores a combined rule list without any classification. Considering the modification and maintenance of the proposed model, the error correction rules are automatically extracted from a training corpus. Experimental results show that the proposed model improves 5.27% on the precision and 5.60% on the recall based on Eojoel unit for the speech recognition result.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.104-108
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• 2004

Problems of overlap errors and side-lobe printing by the design rule reduction in the lithography process using attenuated phase-shifting masks(attPSM) have been serious. Overlap errors and side-lobes can be simultaneously solved by the rule-based correction using scattering bars with the rules extracted from test patterns. Process parameters affecting the attPSM lithography simulation have been determined by the fitting method to the process data. Overlap errors have been solved applying the correction rules to the metal patterns overlapped with contact/via. Moreover, the optimal insertion rule of the scattering bars has made it possible to suppress the side-lobes and to get additional pattern fidelity at the same time.

• Communications for Statistical Applications and Methods
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• v.2 no.2
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• pp.146-154
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• 1995

By using simple Taylor expansion, we derive an easy bias-correction rule for the apparent prodiction error of the predictor defined by the general M-estimators with respect to an arbitrary measure of prediction error. Our method has a considerable computational advantage over the previous methods based on the resampling thchnique such as Cross-validaton and Boothtrap. Connections with AIC, Cross-Validation and Boothtrap are discussed too.

• Kyungpook Mathematical Journal
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• v.61 no.2
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• pp.309-322
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• 2021

A conservative scheme for solving scalar hyperbolic equations is presented using a quadrature rule and an ODE solver. This numerical scheme consists of an upwind part, plus a correction part which is derived by introducing a new variable for the given hyperbolic equation. Furthermore, the stability and accuracy of the derived algorithm is shown with numerous computations.

• ETRI Journal
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• v.27 no.2
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• pp.188-194
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• 2005

We report on the improvement of critical dimension (CD) linearity on a photomask by applying the concept of process proximity correction to a laser lithographic process used for the fabrication of photomasks. Rule-based laser process proximity correction (LPC) was performed using an automated optical proximity correction tool and we obtained dramatic improvement of CD linearity on a photomask. A study on model-based LPC was executed using a two-Gaussian kernel function and we extracted model parameters for the laser lithographic process by fitting the model-predicted CD linearity data with measured ones. Model-predicted bias values of isolated space (I/S), arrayed contact (A/C) and isolated contact (I/C) were in good agreement with those obtained by the nonlinear curve-fitting method used for the rule-based LPC.

• Journal of the Optical Society of Korea
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• v.6 no.4
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• pp.180-184
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• 2002

In this study, we investigated mask errors, photo errors with attenuated phase shift mask and off-axis illumination, and etch errors in dry etch conditions. We propose that total process proximity correction (TPPC), a concept merging every process step error correction, is essential in a lithography process when minimum critical dimension (CD) is smaller than the wavelength of radiation. A correction rule table was experimentally obtained applying TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.159-162
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• 2004

Problems of overlap errors and sidelobe printing by the design rule reduction in the lithography process using attenuated phase-shifting masks(attPSM) have been serious. Overlap errors and sidelobes can be simultaneously solved by the rule-based correction using scattering bars with the rules extracted from test patterns. Process parameters affecting the attPSM lithography simulation have been determined by the fitting method to the process data. Overlap errors have been solved applying the correction rules to the metal patterns overlapped with contact/via. Moreover, the optimal insertion rule of the scattering bars has made it possible to suppress the sidelobes and to get additional pattern fidelity at the same time.

• Proceedings of the KAIS Fall Conference
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• 2003.06a
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• pp.239-242
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• 2003

Scale down으로 인해 부족해진 overlay margin을 통해 충분히 확보해주고, 이와 동시에 attPSM(attenuated phase shift)의 사용으로 발생하는 side-lobe 현상을 억제하기 위한 방법으로 rule-based OPC(optical proximity correction)룰 사용하여 side-lobe만을 효과적으로 추출한 후, 그 자리에 scattering bar를 삽입하였다. 그리고 ORC(optical rule checking)를 통해 original layout과 aerial image의 EPEs(edge placement errors)를 검사하여 검증에 걸리는 시간을 감소시켰다.