• Korean Journal of Materials Research
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• v.19 no.3
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• pp.151-155
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• 2009

Micro-scale copper bumps for build-up PCB were electroplated using a pulse-reverse method. The effects of the current density, pulse-reverse ratio and brightener concentration of the electroplating process were investigated and optimized for suitable performance. The electroplated micro-bumps were characterized using various analytical tools, including an optical microscope, a scanning electron microscope and an atomic force microscope. Surface analysis results showed that the electroplating uniformity was viable in a current density range of 1.4-3.0 A/$dm^2$ at a pulse-reverse ratio of 1. To investigate the brightener concentration on the electroplating properties, the current density value was fixed at 3.0 A/$dm^2$ as a dense microstructure was achieved at this current density. The brightener concentration was varied from 0.05 to 0.3 ml/L to study the effect of the concentration. The optimum concentration for micro-bump electroplating was found to be 0.05 ml/L based on the examination of the electroplating properties of the bump shape, roughness and grain size.

• Journal of the Korean institute of surface engineering
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• v.19 no.3
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• pp.92-108
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• 1986

An electroplating on the lead frame fabricated from domestic copper plate was studied experimentally. In this study, nickel was plated on the thin copper lead frame and silver layer was coated on the nickel film in the cyanide electrolyte. The effect of process variables such as current density, plating time, coating thickness and flow rate of electrolytic solution on the properties of coating was investigated. Some samples on each step were fabricated during electroplating. The results obtained from polarization measurement, observation of SEM photograph, adhesion test of coating and microhardness test are as follows. On silver plating, polarization resistance of potentiostatic cathodic polarization curve is reduced as the flow rate of Ag electrolytic solution increases. And above resistance is also reduced when the minor chemicals of sodium cyanide and sodium carbonate are added in potassium silver cyanide bath. The reduced polarization resistance makes silver deposition on the cathode easy. An increase in the current density and the coating thickness causes the particle size of deposit to coarsen, and consequently the Knoop microhardness of the coating decreases. On selective plating an increase in the flow rate of plating solution lead to do high speed plating with high current density. In this case, the surface morphology of deposit is of fine microstructure with high Knoop hardness. An increasing trend of the adhesion of coating was shown with increasing the current density and flow rate of electrolytic solution.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.283-288
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• 2007

This study aimed to investigate the effects of the seed layer with copper electroplating on the surface morphology of copper foil. Three kinds of seed metal such as platinum, palladium, Pt-Pd alloy were used in this study. Electrodeposition was carried out with the constant current density of 200 $mA/cm^2$ for 68 seconds. Electrochemical experiments, in conjunction with SEM, XRD, AFM and four-point probe, were performed to characterize the morphology and mechanical characteristics of copper foil. Large particles were observed on the surface of the copper deposition layer when a copper foil was electroplated on the 130 nm thickness of Pd, Pt-Pd seed layer. However, a homogeneous surface, low resistivity was obtained when the 260 nm thickness of Pt, Pt-Pd alloy seed layer was used. The minimum value of resistivity was 2.216 ${\mu}{\Omega}-cm$ at the 260 nm thickness of Pt-Pd seed layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.137-137
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• 2010

Copper electroplating is a very popular and important technology for depositing high-quality conductor interconnections, especially in through silicon via (TSV). As this advanced packaging technique developing, a mass of copper and chemical solution are used, so attention to these chemical materials into the utilization and costs can not be ignored. An economical and practical real-time chemical solution monitoring has not been achieved yet. Either Red-green-blue (RGB) or optical emission spectroscopy (OES) color sensor can successfully monitor the color condition of solution during the process. The reaction rate, uniformity and quality can map onto the color changing. Hidden Semi Markov model (HSMM) can establish mapping from the color change to upper indicators, and artificial neural network (ANN) can be integrated to comprehensively determine its targets, whether the solution inside the container can continue to use.

• Journal of the Korean institute of surface engineering
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• v.55 no.4
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• pp.222-230
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• 2022

The electroplating for copper foils has many advantages in economics. During the electroplating, the selection of appropriate additives is needed to manufacture copper foils with various properties. Therefore, it is investigated the initial plating voltage and the properties of copper foil electroplated in the electrolyte with benzothiazole as additives. The addition of benzothiazole without any additives decreased effectively the initial plating voltage. However, the initial voltage increased when the additives was used in combination with an inhibitor and a leveler along with benzothiazole. Moreover, the voltage tends to increase with the concentration of benzothiazole except for 40 ppm group. The mixed additives could change not only the initial voltage but also the morphology of crystals on the surface. When benzothiazole is added at 20 ppm or less, it was observed that the clustered crystals existed on the surface, which result in ununiform surface and high roughness value. In addition, the grain size increased with the amount of benzothiazole, but the resistivity decreased. However, when the leveler was added in 20 ppm, the grain size was decreased with the amount of benzothiazole. The size of the crystals could be influenced by the mixing ratio of additives. Therefore, it is necessary to study on the effect of concentration ratio of additives in the future.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.29-33
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• 2011

The current density in copper electroplating is directly related with the productivity and then to increase the productivity, the increase in current density is required. To obtain the high mass flow rate, rotating disk electrode(RDE) was employed. High rotational speed in RDE can increase the mass flow rate and then high speed electroplating was possible using RDE to control mass flow. Two types of cathode were used. One is RDE and another is rotating cylindrical electrode(RCE). A constant-current, constant-voltage and linear sweep voltammetry were applied to investigate current and voltage relationship. The maximum current density without evolution of hydrogen gas was increased with rotational speed. Over 400 rpm, maximum current density was higher than 1000 A/$m^2$. The diffusion coefficients of copper calculated from the slope of the plots are $5.5{\times}10^6\;cm^2\;s^{-1}$ at $25^{\circ}C$ and $10.5{\times}10^6\;cm^2\;s^{-1}$ at $62^{\circ}C$. The stable voltage without evolution of hydrogen gas was -0.05 V(vs Ag/AgCl). Additives were added to prevent dendritic growth on cathode deposits. The surface roughness was analyzed with UV-Vis Spectrophotometer. The reflectance of the copper surface over 600 nm was measured and was related with the surface roughness. As the surface roughness improved, the reflectance was also increased.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.43-48
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• 2011

The maximum current density of copper electrorefining is 350 A/$m^2$ and the higher current density is required to promote the copper productivity. The 1000 A/$m^2$ high current density is possible when rotating disc electrode is employed to reduce diffusion thickness. The copper electroplating with 1000 A/$m^2$ is possible at 400 rpm. Thiourea and glue were used to improve the electrodeposition behaviors during copper electrorefining process. Potentiodynamic polarization tests were conducted to investigate the effects of additives on copper electrodeposition. Galvanostatic tests were also conducted at 1000 A/$m^2$. Copper were electroplated on cylindrical rotating electrodes to give the uniform flow on the electrode surface. The lowest surface roughness was obtained when 16 ppm thiourea was added to the electrolytes. The surface roughness was increased with glue concentration. The surface hardness was not influenced by addition of glue. The copper nuclei were getting smaller with thiourea concentration, however there is no glue effects on copper nucleation.

• Journal of Korea Foundry Society
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• v.25 no.6
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• pp.259-264
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• 2005

The copper clad steel wire is used extensively as lead wires of electronic components such as capacitors, diodes and glass sealing lamp because the wire combines the strength and low thermal expansion characteristic of Fe-Ni steel with the conductivity and corrosion resistance of copper. In order to fabricate the copper clad steel wire, several processes including electro-plating, tubecladding extrusion process and dip forming process have been introduced and applied. The electroplating process for the production of copper clad steel wire shows poor productivity and induces environmental load generation such as electroplating solution. The dip forming process is suitable to mass production of copper clad steel such as trolley wire. and need expensive manufacturing facilities. The present paper describes the improvement of the conventional continuous casting process to fabricate copper clad steel wire, which its core metal is low thermal expansion Fe-Ni alloy and its sheath material is copper. In particular, the formation of intermetallic compound at interface between core and sheath was investigated in order to introduce optimum continuous casting process parameter for fabrication of copper clad steel wire with higher electrical conductivity. The mechanical strength of copper clad steel wire was also investigated through wiredrawing process with of 95% in total reduction ratio.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• 한국전기화학회:학술대회논문집
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• 1999.10a
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• pp.44-44
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• 1999