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http://dx.doi.org/10.6117/kmeps.2011.18.2.043

Electrochemical Study of the Effect of Additives on High Current Density Copper Electroplating  

Shim, Jin-Yong (Dept. of Materials Science and Engineering, Hongik University)
Moon, Yun-Sung (Process Development Team, LS-Nikko Copper Inc.)
Lee, Jae-Ho (Dept. of Materials Science and Engineering, Hongik University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.18, no.2, 2011 , pp. 43-48 More about this Journal
Abstract
The maximum current density of copper electrorefining is 350 A/$m^2$ and the higher current density is required to promote the copper productivity. The 1000 A/$m^2$ high current density is possible when rotating disc electrode is employed to reduce diffusion thickness. The copper electroplating with 1000 A/$m^2$ is possible at 400 rpm. Thiourea and glue were used to improve the electrodeposition behaviors during copper electrorefining process. Potentiodynamic polarization tests were conducted to investigate the effects of additives on copper electrodeposition. Galvanostatic tests were also conducted at 1000 A/$m^2$. Copper were electroplated on cylindrical rotating electrodes to give the uniform flow on the electrode surface. The lowest surface roughness was obtained when 16 ppm thiourea was added to the electrolytes. The surface roughness was increased with glue concentration. The surface hardness was not influenced by addition of glue. The copper nuclei were getting smaller with thiourea concentration, however there is no glue effects on copper nucleation.
Keywords
RDE; Copper Electroplating; Thiourea; Glue; Copper Nucleation;
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Times Cited By KSCI : 3  (Citation Analysis)
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