• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.9
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• pp.883-891
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• 2013

In wireless smart phone charging scenario, the transmitter pad is larger than the size of the receiver pad. Thus, it is important to supply a constant power to the receiver regardless of its location. In this paper, we propose a new method to regulate the receiver's power by adjusting a drain bias of class E power amplifier. The proposed LF-band wireless power transfer system is as follows: a buck converter power supply which is controlled by a pulse width modulation(PWM) IC TL494, a class E amplifier using a low cost IRF510 power MOSFET, a transmitter coil whose dimension is $16cm{\times}18cm$, a receiver coil whose dimension is $6cm{\times}8cm$, and a full bridge rectifier using Schottky diodes. A measured performance show a maximum output power of 4 W and system efficiency of 67 % if we fix the bias voltage. If we adjust the bias voltage, the received power can be maintained at a constant power of 2 W regardless of receiver pad location.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.288-294
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• 1998

Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increase with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum "effective" free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.have used.

• ETRI Journal
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• v.34 no.6
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• pp.966-969
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• 2012

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.

• Proceedings of the IEEK Conference
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• 2000.09a
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• pp.65-68
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• 2000

It is well-known that the decision rule in the mini-mum mean-squares-error decision feedback equalizer(MMSE-DFE) is biased, and therefore suboptimum with respect to error probability. We present a new family of algorithms that solve the bias problem in the adaptive DFE. A novel constraint, called the constant-norm con-straint, is introduced unifying the quadratic constraint and the monic one. A new cost function based on the constant-norm constraint and Lagrange multiplier is defined. Minimizing the cost function gives birth to a new family of unbiased adaptive DFE. The simula-tion results demonstrate that the proposed method in-deed produce unbiased solution in the presence of noise while keeping very simple both in computation and im-plementation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.620-623
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• 2003

Non-linear behaviors of multilayer piezoelectric ceramic actuator (MCA) were investigated under electrical and mechanical stress. DC 100 V bias was applied to the MCA to obtain displacement. Laser vibrometer, which using Doppler effect, was employed to characterize displacement caused by $d_{33}$ mode of MCA. To understand this non-linear behavior of MCA, displacement was measured and compared under different load states. By increasing load, electric field-induced strain and piezoelectric constant($d_{33}$) of MCA was decreased. We attribute this phenomenon to the domain wall motion and depoling of MCA under heavy load.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.927-933
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• 2006

The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.285-291
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• 2013

In this paper, MOS-Capacitor and MOSFET devices with a Low Level Leakage Current of oxide thickness, channel width and length respectively were to investigate the reliability characterizations mechanism of ultra thin gate oxide films. These stress induced leakage current means leakage current caused by stress voltage. The low level leakage current in stress and transient current of thin silicon oxide films during and after low voltage has been studied from strss bias condition respectively. The stress channel currents through an oxide measured during application of constant gate voltage and the transient channel currents through the oxide measured after application of constant gate voltage. The study have been the determination of the physical processes taking place in the oxides during the low level leakage current in stress and transient current by stress bias and the use of the knowledge of the physical processes for driving operation reliability.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.1
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• pp.11-15
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• 1976

In a MOSFET multivibrator, the gate do not hold into a constant clamp voltage during a conduction period. The analysis of the operation and the 43sign of a MOSFET multivibrator circuit are much more discult than that using a bipolar transistor and a electron tube because of above reason. And therefore, in the designing procedures of the MOSFET monostable multivibrator of this paper, a graphical method is adopted in order to analyze and design easily. The voltage gain curves of the both FETs are drawn using a parameter the voltage Vc across the coupling condenser, and the curves are utilized to investigate the voltages of the drains and the gates and determine the gate bias voltage. The diagram gives also important informations for the design of the multivibrator.

• Journal of The Korean Astronomical Society
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• v.48 no.1
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• pp.83-92
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• 2015

Recent large scale surveys such as Sloan Digital Sky Survey have produced homogeneous samples of multiple-image gravitationally lensed quasars with well-defined selection effects. Statistical analysis on these can yield independent constraints on cosmological parameters. Here we use the image separation statistics of lensed quasars from Sloan Digital Sky Survey Quasar Lens Search (SQLS) to derive constraints on cosmological parameters. Our analysis does not require knowledge of the magnification bias, which can only be estimated from the detailed knowledge on the quasar luminosity function at all redshifts, and includes the consideration for the bias against small image separation quasars due to selection against faint lens galaxy in the follow-up observations for confirmation. We first use the mean image separation of the lensed quasars as a function of redshift to find that cosmological models with extreme curvature are inconsistent with observed lensed quasars. We then apply the maximum likelihood test to the statistical sample of 16 lensed quasars that have both measured redshift and magnitude of lens galaxy. The likelihood incorporates the probability that the observed image separation is realized given the luminosity of the lens galaxy in the same manner as Im et al. (1997). We find that the 95% confidence range for the cosmological constant (i.e., the vacuum energy density) is $0.72{\leq}{\Omega}_{\Lambda}{\leq}1.0$ for a flat universe. We also find that the equation of state parameter can be consistent with -1 as long as the matter density ${\Omega}_m{\leq}0.4$ (95% confidence range). We conclude that the image separation statistics incorporating the brightness of lens galaxies can provide robust constraints on the cosmological parameters.