1 |
J.C. Jackson, D.J. Dumin, "Electric Breakdowns and Breakdown Mechanisms in Ultrathin Silicon Oxides", Microelectronics Reliability, Vol. 39, pp. 171-179, 1999
DOI
ScienceOn
|
2 |
Borkar, Ajay, Gaikwad, Snehal, "Leaky Deep Submicrometer Transistor Mechanism and It's Analytical Estimation", Advances in Computational Sciences & Technology, Vol. 4, pp. 239-242, 2011
|
3 |
Suñe, Jordi, Jimenez, David Miranda, Enrique, "Breakdown Modes and Breakdown Statistics of Ultrathin SiO Gate Oxides", International Journal of High Speed Electronics & Systems, Vol. 11, Issue 3, pp. 789-848, 2011
|
4 |
Samantaray, Malay M., Gurav, Abhijit, Dickey, Elizabeth C., Randall, Clive A., Ching W.Y., "Electrode Defects in Multilayer Capacitors Part II : Finite Element Analysis of Local Field Enhancement and Leakage Current in Three Dimensional Microstructures", Journal of the American Ceramic Society, Vol. 95, pp. 264-268, 2012
DOI
ScienceOn
|
5 |
C. S. Kang, D. J. Dumin, "The Search for Cathode and Anode Traps in High Voltage Stressed Silicon Oxides", Journal of Elect. Society, Vol. 145, No. 4, pp. 1292-1296, 1998
DOI
|