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http://dx.doi.org/10.5573/ieek.2013.50.8.285

The Characteristics of LLLC in Ultra Thin Silicon Oxides  

Kang, C.S. (Department of Electronic and Information Engineering, Yuhan University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.50, no.8, 2013 , pp. 285-291 More about this Journal
Abstract
In this paper, MOS-Capacitor and MOSFET devices with a Low Level Leakage Current of oxide thickness, channel width and length respectively were to investigate the reliability characterizations mechanism of ultra thin gate oxide films. These stress induced leakage current means leakage current caused by stress voltage. The low level leakage current in stress and transient current of thin silicon oxide films during and after low voltage has been studied from strss bias condition respectively. The stress channel currents through an oxide measured during application of constant gate voltage and the transient channel currents through the oxide measured after application of constant gate voltage. The study have been the determination of the physical processes taking place in the oxides during the low level leakage current in stress and transient current by stress bias and the use of the knowledge of the physical processes for driving operation reliability.
Keywords
Stress channel current; Low level current; Transient current; Stress current;
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1 J.C. Jackson, D.J. Dumin, "Electric Breakdowns and Breakdown Mechanisms in Ultrathin Silicon Oxides", Microelectronics Reliability, Vol. 39, pp. 171-179, 1999   DOI   ScienceOn
2 Borkar, Ajay, Gaikwad, Snehal, "Leaky Deep Submicrometer Transistor Mechanism and It's Analytical Estimation", Advances in Computational Sciences & Technology, Vol. 4, pp. 239-242, 2011
3 Suñe, Jordi, Jimenez, David Miranda, Enrique, "Breakdown Modes and Breakdown Statistics of Ultrathin SiO Gate Oxides", International Journal of High Speed Electronics & Systems, Vol. 11, Issue 3, pp. 789-848, 2011
4 Samantaray, Malay M., Gurav, Abhijit, Dickey, Elizabeth C., Randall, Clive A., Ching W.Y., "Electrode Defects in Multilayer Capacitors Part II : Finite Element Analysis of Local Field Enhancement and Leakage Current in Three Dimensional Microstructures", Journal of the American Ceramic Society, Vol. 95, pp. 264-268, 2012   DOI   ScienceOn
5 C. S. Kang, D. J. Dumin, "The Search for Cathode and Anode Traps in High Voltage Stressed Silicon Oxides", Journal of Elect. Society, Vol. 145, No. 4, pp. 1292-1296, 1998   DOI