• Geophysics and Geophysical Exploration
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• v.11 no.1
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• pp.68-77
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• 2008

We have developed an inversion algorithm for loop-loop electromagnetic (EM) data, based on the localised non-linear or extended Born approximation to the solution of the 2.5D integral equation describing an EM scattering problem. Source and receiver configuration may be horizontal co-planar (HCP) or vertical co-planar (VCP). Both multi-frequency and multi-separation data can be incorporated. Our inversion code runs on a PC platform without heavy computational load. For the sake of stable and high-resolution performance of the inversion, we implemented an algorithm determining an optimum spatially varying Lagrangian multiplier as a function of sensitivity distribution, through parameter resolution matrix and Backus-Gilbert spread function analysis. Considering that the different source-receiver orientation characteristics cause inconsistent sensitivities to the resistivity structure in simultaneous inversion of HCP and VCP data, which affects the stability and resolution of the inversion result, we adapted a weighting scheme based on the variances of misfits between the measured and calculated datasets. The accuracy of the modelling code that we have developed has been proven over the frequency, conductivity, and geometric ranges typically used in a loop-loop EM system through comparison with 2.5D finite-element modelling results. We first applied the inversion to synthetic data, from a model with resistive as well as conductive inhomogeneities embedded in a homogeneous half-space, to validate its performance. Applying the inversion to field data and comparing the result with that of dc resistivity data, we conclude that the newly developed algorithm provides a reasonable image of the subsurface.

• Journal of the Korean earth science society
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• v.26 no.5
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• pp.436-442
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• 2005

We have performed multiple geophysical surveys comprised of gravity, magnetic and resistivity methods at the Yangsan fault zone which runs through the Eonyang area, the eastern part of Kyeongsang in southeast Korea. The gravity and magnetic data provide information about geological structures. Furthermore, sections of electrical resistivity show the sharp contrast of electrical resistivity distribution across the fault zone. Since the fractured zone tends to be more conductive than fresh host rocks, the electrical resistivity survey is effective in determining the detailed structure of the fault zone. We have made gravity measurements at a total of 71 points alongside two profiles across the fault zone, and carried out an electrical resistivity survey with a dipole-dipole array at the same location using 40m dipole length. In addition, we have analyzed the aeromagnetic data on the corresponding area. The multiple geophysical properties appear to be abruptly changed in electrical resistivity, gravity and aeromagneticclearly show the different appearance across the fault zone. The fault is identified by its sub vertical attitude which is well known in the Yangsan fault zone. We have also confirmed that the magnitude of the response of the fault is much larger in the southern part of the survey area than the northern area. These results most likely to provide basic information for the further studies about the physical properties and the structures at the Yangsan fault.

• Journal of Energy Engineering
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• v.25 no.3
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• pp.66-72
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• 2016

In this study, a sulfonated poly(arylene ether ketone) block copolymer was prepared from hydrophilic oligomer and hydrophobic oligomer. The structure of the prepared membrane was characterized by $^1H$-NMR, FT-IR and GPC. The $M_w$(weight-average molecular weights) of the polymer was $209,700g\;mol^{-1}$ and the molecular weight distribution($M_w/M_n$) of 1.25 was obtained. The prepared membrane showed excellent thermal stability with gradual weight loss up to $200^{\circ}C$. The proton conductivity of SPAEK block copolymer reached the maximum of $9.0mS\;cm^{-1}$ at $90^{\circ}C$ under 100% relative humidity (RH). From the observed results, it is necessary to do more aggressive attempt to study the possibility of application as an ion-conductive composite electrolyte.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.172-178
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• 1997

Polyaniline(PANI)-stearic acid(SA) composite monolayer was formed at the air-water interface. The stearic acid as a surfactant was used to promote PANI monolayer formation. Uniform PANI-SA monolayer assemblies with Y type and transfer ratio of ca. 1 were fabricated using the Langmuir-Blodgett(LB) technique. The PANI-SA composite LB films with high electrical conductivity of $10^{-1}{\sim}10^{-2}S/cm$ were obtained by doping of HCl or $I_2$, and their conductivity revealed essentially close value as that of conventional PAHI-HCl complex. Especially, iodine is found to be the most promising dopant, since it gives a remarkable stability for the application as a polymer electrode in the MIM molecular device consisted of acceptor, sensitizer, and donor. The structure and physical properties of PANI-SA LB films were investigated through the near-ir UV, FT-IR, and Cyclic voltammetry.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.149-158
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• 2005

This paper describes design, fabrication, and application of the silicon based temperature controllable micro reactor. In order to achieve fast temperature variation and low energy consumption, reaction chamber of the micro reactor was thermally isolated by etching the highly conductive silicon around the reaction chamber. Compared with the model not having thermally isolated structure, the thermally isolated micro reactor showed enhanced thermal performances such as fast temperature variation and low energy consumption. The performance enhancements of the micro reactor due to etched holes were verified by thermal experiment and numerical analysis. Regarding to 42 percents reduction of the thermal mass achieved by the etched holes, approximately 4 times faster thermal variation and 5 times smaller energy consumption were acquired. The total size of the fabricated micro reactor was $37{\times}30{\times}1mm^{3}$. Microchannel and reaction chamber were formed on the silicon substrate. The openings of channel and chamber were covered by the glass substrate. The Pt electrodes for heater and sensor are fabricated on the backside of silicon substrate below the reaction chamber. The dimension of channel cross section was $200{\times}100{\mu}m^{2}$. The volume of reaction chamber was $4{\mu}l$. The temperature of the micro reactor was controlled and measured simultaneously with NI DAQ PCI-MIO-16E-l board and LabVIEW program. Finally, the fabricated micro reactor and the temperature control system were applied to the thermal denaturation and the trypsin digestion of protein. BSA(bovine serum albumin) was chosen for the test sample. It was successfully shown that BSA was successfully denatured at $75^{\circ}C$ for 1 min and digested by trypsin at $37^{\circ}C$ for 10 min.

• 한국지구물리탐사학회:학술대회논문집
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• 1999.08a
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• pp.92-116
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• 1999

Tomographic approaches to image underground structure using electrical properties, can be divided into DC resistivity, electromagnetic, and radar tomography, based on the operating frequency. DC resistivity and radar tomography methods have been recently applied to site investigation for engineering purpose in Korea. This paper review these two tomography methods, through the case histories acquired in Korea. As another method of borehole radar survey, borehole radar reflection method is included, and its inherent problem and solution are discussed, how to find the azimuth angle of reflector using direction-finding-antenna. Since the velocity anisotropy of radar wave has been commonly encountered in field data, anisotropic radar tomography is discussed in this paper. In DC resistivity tomography, two subjects are focussed, electrode arrays, and borehole effect owing to the conductive fluid in borehole. Using the numerical modeling data, various kinds of electrode ways are compared, and borehole effect is illustrated. Most of the case histories presented in this paper are compared with known geology, core logging data, and/or Televiewer images.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.128-133
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• 2010

ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.

• The Journal of Engineering Geology
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• v.14 no.1
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• pp.93-104
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• 2004

This paper intended to assess the hydro-structure characteristics of volcanic rocks based on the hydrogeological data obtained from the underground storage cavern during construction. The variation of groundwater levels was periodically measured from the 28 surface monitoring holes(NX size) and the hydraulic pressures and injection rates were daily monitored from the water curtain holes(95 horizontal holes and 63 vertical holes). The hydraulic interference tests were performed in whole water curtain holes. The distribution patterns of hydraulic pressure are closely related to the dip angles of fracture intersected to the water curtain holes. Three domains can be grouped by the distribution of hydraulic pressures in the horizontal water curtain holes. The initial hydraulic pressures measured immediately after drilling of water crutain holes are high in ascending order of the cavern C-2, C-1, and C-3. The priliminary hydrochemical data also indicate that the portions of the deep groundwater composition is relatively great in the cavern C-3 area. Some of the horizontal water curtain holes in the cavern C-3 show a steady higher groundwater pressure with the composition of shallow groundwater indicating the outer boundary as constant hydraulic boundary. The water curtain holes in the cavern C-2 is characterized as low initial hydraulic pressure and less injection rates, suggesting poor hydraulic connectivity to a shallow groundwater system. The results of the study can help to understand a hydraulic compartment concept in a fracture hydro-geology and be utilized during the surface investigation for a groundwater system.