• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.142.2-142.2
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• 2016

The metal intercalation to an organic semiconductor is of importance since the charge transfer between a metal and an organic semiconductor can induce the highly enhanced conductivity for achieving efficient organic electronic devices. In this regard, the changes of the electronic structure of copper phthalocyanine (CuPc) caused by the intercalation of potassium are studied by ultraviolet photoemission spectroscopy (UPS) and density functional theory (DFT) calculations. Potassium intercalation leads to the appearance of an intercalation-induced peak between the highest molecular occupied orbital (HOMO) and the lowest molecular unoccupied orbital (LUMO) in the valence-band spectra obtained using UPS. The DFT calculations show that the new gap state is attributed to filling the LUMO+1, unlike a common belief of filling the LUMO. However, the LUMO+1 is not conductive because the ${\pi}$-conjugated macrocyclic isoindole rings on the molecule do not make a contribution to the LUMO+1. This is the origin of a metal-insulator transition through heavily potassium doped CuPc.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.5
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• pp.318-323
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• 2015

We present a new way to create a thermally stable, highly strained germanium (Ge) optical resonator using a novel Ge-on-dual-insulators substrate. Instead of using a conventional way to undercut the oxide layer of a Ge-on-single-insulator substrate for inducing tensile strain in germanium, we use thin aluminum oxide as a sacrificial layer. By eliminating the air gap underneath the active germanium layer, we achieve an optically insulating, thermally conductive, and highly strained Ge resonator structure that is critical for a practical germanium laser. Using Raman spectroscopy and photoluminescence experiments, we prove that the novel geometry of our Ge resonator structure provides a significant improvement in thermal stability while maintaining good optical confinement.

• Journal of Sensor Science and Technology
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• v.23 no.4
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• pp.234-237
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• 2014

In this paper, a copper foil-thick grapheme (thin graphite sheet)-copper foil structure is reported to achieve mechanically strong and high thermal conductive layer suitable for heat spreading components. Since graphene provides much higher thermal conductivity than copper, thick graphene embedded copper layer can achieve higher effective thermal conductivity which is proportional to graphene/copper thickness ratio. Since copper is nonreactive with carbon material which is graphene, chromium is used as adhesion layer to achieve copper-thick graphene-copper bonding for graphene embedded copper layer. Both sides of thick graphene were coated with chromium as an adhesion layer followed by copper by sputtering. The copper foil was bonded to sputtered copper layer on thick graphene. Angstrom's method was used to measure the thermal conductivity of fabricated copper-thick graphene-copper structure. The thermal conductivity of the copper-thick graphene-copper structures is measured as $686W/m{\cdot}K$ which is 1.6 times higher than thermal conductivity of pure copper.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.295-298
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• 2013

Nano-size manganese ferrite reinforced conductive polypyrrole composites reveal a core-shell structure by in situ polymerization, in the presence of dodecyl benzene sulfonic acid as the surfactant and dopant, and iron chloride as the oxidant. The structure and magnetic properties of manganese ferrite nano-fillers were measured, by using X-ray diffraction and vibrating sample magnetometer. The morphology, microstructure, and conductivity of the composite were characterized by transmission electron microscopy, Fourier transform infrared spectroscopy, and four-wire technique. The microwave-absorbing properties of composites reinforcement dispersed in resin coating with the coating thickness of 1.2 nm were investigated, by using vector network analyzers, in the frequency range of 8~12 GHz. A reflection loss of -8 dB was observed at 10.5 GHz.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.1-4
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• 2007

This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.36-40
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• 2016

The 2 wt.% Al-doped ZnO(AZO) thin films were fabricated on PET substrates with various RF power 20, 35, 50, 65, and 80W by using RF magnetron sputtering in order to investigate the structure, electrical and optical properties of AZO thin films in this study. The XRD measurements showed that AZO films exhibit c-axis orientation. At a RF power of 80W, the AZO films showed the highest (002) diffraction peak with a FWHM of 0.42. At a RF power of 65W, the lowest electrical resistivity was about $1.64{\times}[10]$ ^(-4) ${\Omega}-cm$ and the average transmittance of all films including substrates was over 80% in visible range. Good transparence and conducting properties were obtained due to RF power control. The obtained results indicate that it is acceptable for applications as transparent conductive electrodes.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1887-1889
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• 2005

To measure the mechanical and structural properties of semiconducting materials in power cable, we have investigated the stress-strain and fractural structure of semiconducting materials showed by changing the content of carbon black. Those were made as sheets after pressing for 20 minutes at $180[^{\circ}C]$ with a pressure of $200[kg/cm^2]$. The contents of conductive carbon black were 20, 30 and 40(wt%), respectively. The stress-strain experiment was measured by TENSOMETER 2000. The SEM experiment was measured by JSM-6400. From above experimental result, Strain was decreased, while stress was increased according to increment of carbon black content. EEA among resins was best the dispersion of carbon back in base resin from SEM measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.865-868
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• 2000

It was examined that the relationship between microstructures, electrical properties and crystal structure of (1-x)CaMnO$_3$-xCaTiO$_3$solid solution system which was made by mixing a semiconducting material CaMnO$_3$of low resistance and a dielectric material CaTiO$_3$of high resistance with variable ratios (x=0, 0.1, 0.3, 0.5, 0.7, 0.9, 1.0). As the CaTiO$_3$increased, the resistance, B constant and lattice constant were increased, but the grain size was decreased. On particular, above 50wt% of CaTiO$_3$, the resistance at 2 5$^{\circ}C$ was rapidly increased due to the correlation in connectivity of the lattices between the conductive Mn$^{+4}$ octahedron and the insulative Ti$^{+4}$ octahedron.ron.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.113-117
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• 2021

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

• Journal of Korea Multimedia Society
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• v.23 no.8
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• pp.1040-1048
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• 2020

In this study, in order to improve the implantable bone conduction transducer of the prototype proposed by Shin et al., the effect of the element parameters of the transducer on the frequency characteristics was analyzed using electromagnetic and mechanical vibration analysis. Electromagnetic analysis was performed on the size of the permanent magnet and the distance between the metal plate and the coil to derive an optimal structure that generates the maximum Lorentz force. In addition, mechanical vibration analysis was performed on the cantilever structure of the vibrational membrane in order to minimize the distortion of the transducer and to have a frequency characteristic suitable for conductive hearing loss compensation. The frequency characteristics of the transducer of the optimal structure derived through finite element method were compared with the simulation results of the previous transducer. As a result, the output magnitude (displacement) of the transducer designed with the optimal structure generated an average 8.8 times higher than the previous transducer, and the resonance frequency was generated at 0.9 kHz.