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http://dx.doi.org/10.4313/TEEM.2007.8.1.001

Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology Chemical Mechanical Planarization  

Stefanova, Y. (Institute for Semiconductor Technology, Darmstadt University of Technology)
Cilek, F. (Institute for Semiconductor Technology, Darmstadt University of Technology)
Endres, R. (Institute for Semiconductor Technology, Darmstadt University of Technology)
Schwalke, U. (Institute for Semiconductor Technology, Darmstadt University of Technology)
Publication Information
Transactions on Electrical and Electronic Materials / v.8, no.1, 2007 , pp. 1-4 More about this Journal
Abstract
This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.
Keywords
CMP; Etchback; Reverse masking; C-AFM;
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