IEIE Transactions on Smart Processing and Computing

The Institute of Electronics and Information Engineers (대한전자공학회)
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Strained Ge Light Emitter with Ge on Dual Insulators for Improved Thermal Conduction and Optical Insulation

  • Kim, Youngmin (Department of Electronic Engineering, Inha University) ;
  • Petykiewicz, Jan (Department of Electrical Engineering, Stanford University) ;
  • Gupta, Shashank (Department of Electrical Engineering, Stanford University) ;
  • Vuckovic, Jelena (Department of Electrical Engineering, Stanford University) ;
  • Saraswat, Krishna C. (Department of Electrical Engineering, Stanford University) ;
  • Nam, Donguk (Department of Electronic Engineering, Inha University)
  • Received : 2015.10.14
  • Accepted : 2015.10.25
  • Published : 2015.10.31
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Abstract

We present a new way to create a thermally stable, highly strained germanium (Ge) optical resonator using a novel Ge-on-dual-insulators substrate. Instead of using a conventional way to undercut the oxide layer of a Ge-on-single-insulator substrate for inducing tensile strain in germanium, we use thin aluminum oxide as a sacrificial layer. By eliminating the air gap underneath the active germanium layer, we achieve an optically insulating, thermally conductive, and highly strained Ge resonator structure that is critical for a practical germanium laser. Using Raman spectroscopy and photoluminescence experiments, we prove that the novel geometry of our Ge resonator structure provides a significant improvement in thermal stability while maintaining good optical confinement.

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References

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